transistor bfr96
Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
Text: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold
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BFR96/D
BFR96
BFR96
BFR96/D*
DEVICEBFR96/D
transistor bfr96
BFR964
RF NPN POWER TRANSISTOR 3 GHZ 200 watts
motorola J50
datasheet for transistor bfr96
BFR96 TRANSISTOR
BFR961
RF TRANSISTOR 1.5 GHZ
BFR96 motorola
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bfr96ts
Abstract: No abstract text available
Text: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure
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BFR96TS
BFR96TS
D-74025
22-Jan-01
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BFR96TS
Abstract: No abstract text available
Text: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure
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BFR96TS
BFR96TS
D-74025
22-Jan-01
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BFR96
Abstract: BFR96 TRANSISTOR transistor bfr96
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers
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BFR96
BFR96
D10b3
BFR96 TRANSISTOR
transistor bfr96
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Transistor C G 774 6-1
Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers
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BFR96
Transistor C G 774 6-1
C G 774 6-1
transistor a 1941
a/Transistor C G 774 6-1
RLF100-11/12/Transistor C G 774 6-1
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BFR96
Abstract: No abstract text available
Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n H igh -Frequ en cy Thransistor The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers
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BFR96
BFR96
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lc 945 p transistor NPN
Abstract: BFR96S
Text: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device
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hhS3R31
D031A15
BFR96S
BFQ32S.
BFR96S/02
lc 945 p transistor NPN
BFR96S
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BFR96
Abstract: BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor
Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor DESCRIPTION VllDfiEb D04577b lfl7 « P H I N SbE D PHILIPS INTERNA TIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as
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BFR96
DD4S77b
ON4487)
BFQ32.
coll801
711082b
BFR96 philips
BFR96 LOW POWER TRANSISTOR
for transistor bfr96
BFQ32
4 20 mA 1992
transistor bfr96
philips bfq32
BFR96$
a 933 transistor
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BFR96S
Abstract: 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN transistor a 1707 lc 945 transistor B 557 PNP TRANSISTOR transistor B 764
Text: Prod uct specification Philips S em iconductors -T < S /'2 - 3 c NPN 5 GHz wideband transistor HILIPS INTERNATIONAL DESCRIPTION 5LE 711002b BFR96S 0043704 253 H P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device
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BFR96S
711002b
004S7Ã
11PHIN
BFQ32S.
BFR96S
6852 d TRANSISTOR
lc 945 p transistor
BFr96s philips
bfr96s scattering
lc 945 p transistor NPN
transistor a 1707
lc 945 transistor
B 557 PNP TRANSISTOR
transistor B 764
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BFR96
Abstract: BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96
Text: Philips Semiconductors Product specification - 3 /- . Z 3 NPN 5 GHz wideband transistor DESCRIPTION 711002b 004577b 1A7 • P H I N 5bE D PHILIPS INTERNATIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as
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ON4487)
BFQ32.
BFR96
711DflSb
r-31-23
711Dfl2b
BFR96
BFR96 philips
Transistor 933
Transistor s44
transistor bfr96
transistorbfr96
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transistor bfr96
Abstract: BFR96 philips BFR96 BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFR96 TRANSISTOR a 933 transistor BFR96 pins resistance BFQ32 Transistor 933
Text: ^ 5 3 ^ 3 1 Philips Semiconductors 0031ÛÔ7 b fll M APX Product specification BFR96 NPN 5 GHz wideband transistor N AMER PHILIPS/DISCRETE DESCRIPTION □TE D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as
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bbS3131
BFR96
ON4487)
BFQ32.
transistor bfr96
BFR96 philips
BFR96
BFR96 LOW POWER TRANSISTOR
for transistor bfr96
BFR96 TRANSISTOR
a 933 transistor
BFR96 pins resistance
BFQ32
Transistor 933
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transistor bfr96
Abstract: SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor
Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor PHILIPS DESCRIPTION 711DÔ2t> 0 0 4 5 7 7 b Sfc.E D INTERNATIONAL BFR96 lfl7 « P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as
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BFR96
004577b
ON4487)
BFQ32.
BFR96/02
0D457A2
00MS763
transistor bfr96
SL 100 NPN Transistor
BFR96
BFR96 LOW POWER TRANSISTOR
transistor 936
M8B916
BFR96 pins resistance
BFR96 TRANSISTOR
BFQ32
a 933 transistor
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BFR96 philips
Abstract: No abstract text available
Text: ^ 5 3 ^ 3 1 Philips Semiconductors 0 0 3 1 flfl7 b fll M APX Product specification BFR96 NPN 5 GHz w ideband transistor N AflER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as
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BFR96
BFR96/02
ON4487)
hbS3T31
BFR96 philips
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lc 945 p transistor
Abstract: lc 945 p transistor NPN lc 945 transistor BFR96S 6852 d TRANSISTOR s5D transistor SL 100 NPN Transistor transistor B 764 BFr96s philips FP 801
Text: □□31ÖRS 7 s ö P hilips Sem ico n d u cto rs IAPX Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE D ESC R IP T IO N hTE T> PINNING NPN transistor in a plastic SO T37 envelope primarily intended for MATV applications. The device
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BFR96S
BFQ32S.
lc 945 p transistor
lc 945 p transistor NPN
lc 945 transistor
BFR96S
6852 d TRANSISTOR
s5D transistor
SL 100 NPN Transistor
transistor B 764
BFr96s philips
FP 801
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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BFQ32S
Abstract: BFR96S GHz PNP transistor SAA 1020 Philips DLM
Text: Philips Sem iconductors Product specification PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ^ SbE D BFQ32S m 711002b 0G4S433 DMT • PHIN PINNING PNP transistor in a plastic SOT37 envelope. It is intended for use in UHF applications such as broadcast
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BFQ32S
7110fl2b
BFR96S.
BFQ32S
BFR96S
GHz PNP transistor
SAA 1020
Philips DLM
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbSB^Bl 0031531 "ns HAPX^^duc^peoification PNP 4 G Hz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b'lE PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband
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BFQ32
BFQ32/02
BFR96.
bbS3T31
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BFQ32S
Abstract: BFR96S
Text: Philips Semiconductors 53^31 ^ 0031544 543 M AP X Product specification PNP 4 GHz wideband transistor ^ «p BFQ32S - n AMER PHILIPS/DISCRETE DESCRIPTION blE D • PINNING PNP transistor in a plastic SOT37 envelope. It Is Intended for use in UHF applications such as broadcast
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BFQ32S
BFR96S.
BFQ32S
BFR96S
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b bS 3T 31 0 031544 543 APX Product specification PNP 4 GHz wideband transistor BFQ32S N AMER PHILIPS/DISCRETE DESCRIPTION blE D • PINNING PNP transistor in a plastic SOT37 envelope. It is intended for use in UHF applications such as broadcast
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BFQ32S
BFR96S.
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philips bfq32
Abstract: BFQ32
Text: Product specification Philips Semiconductors 7 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 5bE » ^ 3 / - 2 . 3 BFQ32 711üfl5b G045420 41D H P H I N PINNING PNP transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband
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BFR96.
BFQ32
G045420
BFQ32/02
philips bfq32
BFQ32
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BFQ32
Abstract: for transistor bfr96 MB8347 philips bfq32 BFR96 philips transistor bfr96 BFR96 UBB345
Text: Philips Semiconductors ^33^31 G031S31 'HS IA P X Product specification PNP 4 GHz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b^E D PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband
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G031S31
BFQ32
BFR96.
BFQ32/02
UBBS47
BFQ32
for transistor bfr96
MB8347
philips bfq32
BFR96 philips
transistor bfr96
BFR96
UBB345
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Untitled
Abstract: No abstract text available
Text: BFR96T ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features
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BFR96T
BFR96T
20-Jan-99
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Untitled
Abstract: No abstract text available
Text: ViSH A Y ▼ BFR96TS _ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier.
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BFR96TS
BFR96TS
20-Jan-99
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philips bfq32
Abstract: BFQ32 BFR96 philips PNP transistor 263 transistor bfr96 BFR96 BFR96 pins resistance GHz PNP transistor BFQ-32
Text: Product specification Philips Sem iconductors 7=v3/ -JZ3 PNP 4 GHz wideband transistor PH IL IPS INTERNATIONAL DESCRIPTION BFQ32 7 1 1 0 0 2 b Ü Ü 4 S M 2 Ü 41D H I P H I N PINNING PNP transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband
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BFq32
BFR96.
711062b
00M5423
MBB347
philips bfq32
BFQ32
BFR96 philips
PNP transistor 263
transistor bfr96
BFR96
BFR96 pins resistance
GHz PNP transistor
BFQ-32
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