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    TRANSISTOR BF 459 Search Results

    TRANSISTOR BF 459 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BF 459 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 1249

    Abstract: UPA800T 1788
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800T UPA800T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS BF 3.84e-16 MJC 0.5 124.9 XCJC NF 1.04 CJS VAF 11.87 VJS 0.75 IKF 0.027 MJS ISE 1e-14 FC 0.5 10e-12 NE 2.17 TF BR


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    PDF UPA800T UPA800T 84e-16 1e-14 01e-4 358e-12 21e-12 10e-12 635e-9 24-Hour transistor 1249 1788

    NF NPN Silicon Power transistor TO-3

    Abstract: UPA800T bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 NE680 S21E UPA800T-T1 97 transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz


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    PDF UPA800T NE680 UPA800T 24-Hour NF NPN Silicon Power transistor TO-3 bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 S21E UPA800T-T1 97 transistor

    transistor bf 458

    Abstract: NE685 S21E UPA806T UPA806T-T1
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1


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    PDF UPA806T NE685 UPA806T 24-Hour transistor bf 458 S21E UPA806T-T1

    431 transistor

    Abstract: BJT IC Vce NE AND micro-X 2SC5433 NE681 NE681M03 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


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    PDF NE681M03 NE681M03 NE681 c8e-12 12e-9 10e-9 2e-12 4e-12 24-Hour 431 transistor BJT IC Vce NE AND micro-X 2SC5433 S21E

    NE681M03

    Abstract: m03 transistor BJT IC Vce af1rc bf 239 NE AND micro-X 2SC5433 NE681 S21E 2SC543
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


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    PDF NE681M03 NE681M03 NE681 m03 transistor BJT IC Vce af1rc bf 239 NE AND micro-X 2SC5433 S21E 2SC543

    transistor KF 507

    Abstract: 2SC5435 NE685 NE685M03 S21E bjt microwave 15 GHz npn transistor BF 507
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


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    PDF NE685M03 NE685M03 transistor KF 507 2SC5435 NE685 S21E bjt microwave 15 GHz npn transistor BF 507

    m03 transistor

    Abstract: NE AND micro-X nec 08e 2SC5434 NE680 NE680M03 S21E BF179 bjt npn m03 low noise transistor bF 179
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS Units in mm FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:


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    PDF NE680M03 NE680M03 24-Hour m03 transistor NE AND micro-X nec 08e 2SC5434 NE680 S21E BF179 bjt npn m03 low noise transistor bF 179

    S21E

    Abstract: UPA809T UPA809T-T1 NE688 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


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    PDF UPA809T NE688 UPA809T 24-Hour S21E UPA809T-T1 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350

    bjt microwave 15 GHz npn

    Abstract: 2SC5436 NE687 NE687M03 S21E transistor 1038 BF-104
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


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    PDF NE687M03 NE687M03 687M03 26e-12 19e-12 08e-12 12e-9 10e-9 bjt microwave 15 GHz npn 2SC5436 NE687 S21E transistor 1038 BF-104

    bjt npn m03

    Abstract: BR 123 m03 bjt npn 2SC5437 NE688 NE688M03 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.4±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • • PACKAGE OUTLINE M03


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    PDF NE688M03 NE688M03 24-Hour bjt npn m03 BR 123 m03 bjt npn 2SC5437 NE688 S21E

    transistor MJE -1103

    Abstract: NE AND micro-X 2SC5432 NE856 NE856M03 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


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    PDF NE856M03 NE856M03 transistor MJE -1103 NE AND micro-X 2SC5432 NE856 S21E

    MARKING rks

    Abstract: BFR949F transistor bf 186
    Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA  fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


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    PDF BFR949F EHA07524 Jan-04-2002 MARKING rks BFR949F transistor bf 186

    LOT CODE NE NEC

    Abstract: nec 08e 2SC5434 NE680 NE680M03 S21E nec manufacture year bf179
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


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    PDF NE680M03 NE680M03 LOT CODE NE NEC nec 08e 2SC5434 NE680 S21E nec manufacture year bf179

    Transistor B C 458

    Abstract: c 458 c transistor transistor c 458 transistor bf 458 transistor 458 NPN transistor 458 458 transistor transistor C 459 transistor cb 458 LM 458
    Text: *BF 457 *BF 458 *BF 459 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR % Preferred device Dispositif recommandé BF 457, BF 458 and BF 459 are plastic encapsulated transistor designed for video output stages in black and white and color TV receivers. These transistors feature


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    PDF BF459sont Transistor B C 458 c 458 c transistor transistor c 458 transistor bf 458 transistor 458 NPN transistor 458 458 transistor transistor C 459 transistor cb 458 LM 458

    transistor S104

    Abstract: c 458 c transistor TRANSISTOR 2SC 458 Transistor B C 458 transistor c 458 s104 transistor BF458 transistor bf 458 S104 transistor 458
    Text: 25C D • aZBSbOS 00044^5 T H S I E 6 ' r - i/ '- Z 'J BF 457 BF 458 BF 459 NPN Silicon RF Transistors SIEMENS A K TI EN GE SE LL SCH AF n.5 C 04495 fo r video and AF o u tp u t stages 6F 457, BF 458 and BF 459 are epitaxial NPN silicon planar transistors in TO 126 plastic


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    PDF -BF459 Q62702-F315 Q62702-F316 Q62702-F317 Q62902-B62 Q62902-B63 25mii. l23Sfe BF457 BF458 transistor S104 c 458 c transistor TRANSISTOR 2SC 458 Transistor B C 458 transistor c 458 s104 transistor BF458 transistor bf 458 S104 transistor 458

    ULN2003NA

    Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
    Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module


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    PDF TD62M TD62C TD/TB62 N29B3a 54S63PA 54597p 54598PÜ 2786A UDN2580a ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    BF298

    Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
    Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


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    PDF BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


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    PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    NF NPN Silicon Power transistor TO-3

    Abstract: transistor bf 458
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package PACKAGE O UTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz 2.1 ± 0.1


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    PDF NE685 UPA806T UPA806T 24-Hour NF NPN Silicon Power transistor TO-3 transistor bf 458

    bjt npn m03

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS um ts in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: pi • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


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    PDF NE681M03 NE681M03 NE681 4e-12 24-Hour bjt npn m03

    NEC 1357

    Abstract: 1357 transistor NEC nec transistor 1357 transistor NEC 1357
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


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    PDF NE688M03 NE688M03 24-Hour NEC 1357 1357 transistor NEC nec transistor 1357 transistor NEC 1357