TRANSISTOR BF 194 B Search Results

TRANSISTOR BF 194 B Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BF 194 B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BF 194 transistor Abstract: BF 194 npn transistor BF 194 TRANSISTORS transistor bf 194 C22B BSY82 BFY50 BFY51 BFY52 BSY81 Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 1 A inTO -39 ( - T O - 5 ) metal case Type Maximum ratings C haracteristics at Tamb f'Ù (ñ ) T , = 1am b 25 °C T = ÍÍ5 °C c a se (Tcase = 100 °C) T ,°C 200 200 200 200 200 200	OCR Scan	BSY81 BSY82 BFY50 BFY51 BF 194 transistor BF 194 npn transistor BF 194 TRANSISTORS transistor bf 194 C22B BSY82 BFY50 BFY51 BFY52 BSY81	PDF
TRANSISTOR BFW 11 Abstract: BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor Text: METAL-CAN & EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec	OCR Scan	O-237 TRANSISTOR BFW 11 BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor	PDF
bfw10 transistor Abstract: pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor Text: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 DDOOOlt T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec	OCR Scan	O-237 bfw10 transistor pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor	PDF
BFR194 Abstract: No abstract text available Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	Q62702-F1346 OT-23 15toimax BFR194 900MHz BFR194	PDF
transistor BF 506 Abstract: BF 194 transistor BF506 transistor bf 194 transistor bf 193 transistor f 506 9BMS pnp vhf transistor Text: BF 506 SILICON PLANAR PNP VH F O SC ILLA T O R M IX E R The B F 506 is a silicon planar epitaxial PN P transistor in Jedec T O -9 2 plastic package. It is intended for use as mixer and oscillator in the V H F range. However, it may also be used as not controlled preamplifier at low noise.	OCR Scan	TQ-92 transistor BF 506 BF 194 transistor BF506 transistor bf 194 transistor bf 193 transistor f 506 9BMS pnp vhf transistor	PDF
BF 194 transistor Abstract: VPS05178 BFP194 Text: BFP 194 PNP Silicon RF Transistor 3 For low distortion broadband amplifier in antenna and telecommunications systems up 4 to 1.5 GHz at collector currents from 20 mA to 80 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	VPS05178 OT-143 900MHz Oct-12-1999 BF 194 transistor VPS05178 BFP194	PDF
bf 194 pin configuration Abstract: Transistor BFR 35 BFr pnp transistor Text: BFR 194 PNP Silicon RF Transistor 3 For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2 Complementary type: BFR 106 NPN 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	VPS05161 OT-23 900MHz Oct-25-1999 bf 194 pin configuration Transistor BFR 35 BFr pnp transistor	PDF
sot-23 rks Abstract: marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration Text: BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	OT-23 Q62702-F1346 900MHz Dec-13-1996 sot-23 rks marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration	PDF
transistor bf 196 Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: SIEMENS B FP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5 GHz at collector currents from 20mA to 80mA RKs Q62702-F1347 1 =C 2=E LU II ''•cfr BFP 194 CO II 03 ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	OT-143 Q62702-F1347 900MHz IS211	PDF
TS 11178 Abstract: BF 194 transistor marking code RKS transistors Q62702-F1347 bf 194 pin configuration Text: BFP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code	Original	OT-143 Q62702-F1347 900MHz Dec-13-1996 TS 11178 BF 194 transistor marking code RKS transistors Q62702-F1347 bf 194 pin configuration	PDF
BFR106 Abstract: 2I k Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	OT-23 Q62702-F1219 BFR106 900MHz BFR106 2I k	PDF
BFr pnp transistor Abstract: BFR106 Transistor BFR 80 BFR 30 transistor Text: BFR 106 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers For linear broadband amplifiers Special application: antenna amplifiers Complementary type: BFR 194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	VPS05161 OT-23 Oct-26-1999 BFr pnp transistor BFR106 Transistor BFR 80 BFR 30 transistor	PDF
BFR106 Abstract: Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor Text: BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	OT-23 Q62702-F1219 900MHz Dec-11-1996 BFR106 Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor	PDF

transistor kf 469 Abstract: transistor HAN 819 diode "jyw" JYW SOT KF 469 JYW diode r778 bjt ce amplifier transistor KF 507 transistor d 2389 Text: ¥ ti¡%HEWLETT ft "KM PACKARD High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Surface Mount Plastic Package/SOT-343 SC-70 Outline 4T • Transition Freque ncy	OCR Scan	HBFP-0420 Package/SOT-343 SC-70) HBFP-0420 SC-70 OT-343) 5968-0129E 5968-1684E transistor kf 469 transistor HAN 819 diode "jyw" JYW SOT KF 469 JYW diode r778 bjt ce amplifier transistor KF 507 transistor d 2389	PDF
PNP transistor 269 Abstract: HBFP-0420-TR3 transistor BF 502 CMP10 CMP12 HBFP-0420 r778 nr. 9181 transistor BF 199 CMP16 Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Agilent’s HBFP-0420 is a high performance isolated collector	Original	HBFP-0420 OT-343 SC-70) HBFP-0420 SC-70 OT-343) 5968-5433E 5988-0132EN PNP transistor 269 HBFP-0420-TR3 transistor BF 502 CMP10 CMP12 r778 nr. 9181 transistor BF 199 CMP16	PDF
Untitled Abstract: No abstract text available Text: 4 0 4 3 C O S /M O S INTFRRATFn IN I C u K A I QL & HCC/HCM043B , HCC/HCF 4044B CIRCUITS Q U A D 3 -S T A T E R -S LATCHES: Q U A D NOR R -S L A T C H -4 0 4 3 B Q U A D N A N D R -S L A T C H -4 0 4 4 B • • • • • • • • Q U IESCENT C U R R E N T SPECIFIED TO 20V FOR HCC DEVICE	OCR Scan	HCC/HCM043B 4044B HCC/HCF4069UB	PDF
2907A PNP bipolar transistors Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846 Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3	Original	O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846	PDF
mje 1303 Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X	PDF
transistor bf 968 Abstract: No abstract text available Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O	Original	NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968	PDF
atc100a Abstract: JL 1500 3.6v 9901v Philips capacitor 116 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 TDMA POWER 5509 Text: Philips Semiconductors 1880 MHz PA Driver with BFG21W 1880 MHz PA Driver with BFG21W Application Note JL-9901v0 Author Jarek Lucek April 9, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications in	Original	BFG21W JL-9901v0 BFG21W, BFG21W 24dBm, 7E-12 99E-13 atc100a JL 1500 3.6v 9901v Philips capacitor 116 RF NPN POWER TRANSISTOR C 10-12 GHZ PMBT3904 TDMA POWER 5509	PDF
HBF4727A Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product	OCR Scan		PDF
S4 78a DIODE schottky Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92 Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2	Original	25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92	PDF
2907A PNP bipolar transistors Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2	Original	OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT	PDF

TRANSISTOR BF 194 B Search Results

TRANSISTOR BF 194 B Result Highlights (5)

TRANSISTOR BF 194 B Datasheets Context Search

BF 194 transistor

TRANSISTOR BFW 11

bfw10 transistor

BFR194

transistor BF 506

BF 194 transistor

bf 194 pin configuration

sot-23 rks

transistor bf 196

Untitled

TS 11178

BFR106

BFr pnp transistor

BFR106

transistor kf 469

PNP transistor 269

Untitled

2907A PNP bipolar transistors

mje 1303

transistor bf 968

atc100a

HBF4727A

S4 78a DIODE schottky

2907A PNP bipolar transistors