Untitled
Abstract: No abstract text available
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
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2SB906
2SD1221
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2SB906
Abstract: 2SD1221 B906
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
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2SB906
2SD1221
2SB906
2SD1221
B906
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B906
Abstract: 2SB906 2SD1221
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
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2SB906
2SD1221
B906
2SB906
2SD1221
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transistor B906
Abstract: B906 2SB906 2SD1221 B-906
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
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2SB906
2SD1221
transistor B906
B906
2SB906
2SD1221
B-906
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Untitled
Abstract: No abstract text available
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
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2SB906
2SD1221
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Untitled
Abstract: No abstract text available
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
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2SB906
2SD1221
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Untitled
Abstract: No abstract text available
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
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2SB906
2SD1221
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transistor B906
Abstract: 2SB906 7B1A B-906 B906 2SD1221
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 • ハイブリッド対応外形の (B) 2SB906 (LB) もあります。
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2SB906
2SD1221
transistor B906
2SB906
7B1A
B-906
B906
2SD1221
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transistor B906
Abstract: 2SB906 2SD1221 B906 B-906
Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage · High power dissipation: PC = 20 W (Tc = 25°C) · Complementary to 2SD1221 · ハイブリッド対応外形の (B) 2SB906 (LB) もあります。
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2SB906
2SD1221
transistor B906
2SB906
2SD1221
B906
B-906
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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heidenhain rod 456
Abstract: 2090-UXPC-D09xx Heidenhain ROD 456 - 2500 pin rod 323 heidenhain HEIDENHAIN rod 529 HEIDENHAIN ROD 630 HEIDENHAIN ROD 420 ultra5000 interface cable 2090-uxpc-D09xx VARISTOR 10sp HEIDENHAIN rod 430
Text: Selection Guide Kinetix Motion Control Rotary Motion Servo Drives MP-Series 2092 2097 TL-Series 2093 2098 HPK-Series 2094 2099 RDD-Series Motion Accessories Linear Motion 2090 MP-Series 1394 TL-Series LDC-Series LDL-Series Logix Motion Modules 1756 1768 Important User Information
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Ultra1500,
Ultra3000,
Ultra5000,
GMC-SG001O-EN-P
GMC-SG001N-EN-P
heidenhain rod 456
2090-UXPC-D09xx
Heidenhain ROD 456 - 2500 pin
rod 323 heidenhain
HEIDENHAIN rod 529
HEIDENHAIN ROD 630
HEIDENHAIN ROD 420
ultra5000 interface cable 2090-uxpc-D09xx
VARISTOR 10sp
HEIDENHAIN rod 430
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transistor w2d
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM43-10109-3E FUJITSU 1. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives beforeordering. 2. The information and circuit diagrams in this document presented as examples of semiconductor device
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CM43-10109-3E
addr16
addr16
43-10109-3E
transistor w2d
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AN2556
Abstract: block diagram of mri machine DD62 F2MC-16 LQFP-100 MB90641A QFP-100 MURATA VCO QE 0002C
Text: 16-bit Proprietary Microcontroller FMC-16L MB90640A Series MB90641A/P641A • DESCRIPTION MB90640A series includes 16-bit microcontrollers optimally suitable for process control in a wide variety of industrial and OA equipment. The series uses the F2MC*-16L CPU which is based on the F2MC-16 but with
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16-bit
F2MC-16L
MB90640A
MB90641A/P641A
F2MC-16
8/16-bit
F100007S-2C-3
AN2556
block diagram of mri machine
DD62
LQFP-100
MB90641A
QFP-100
MURATA VCO QE
0002C
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