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    TRANSISTOR B6 Search Results

    TRANSISTOR B6 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN Transistor 600V

    Abstract: B528 ULB122
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB122 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC ULB122 is a medium power transistor designed for use in switching applications. „ FEATURES * High breakdown voltage


    Original     		PDF ULB122 ULB122 ULB122G-xx-TM3-T O-251 QW-R213-014 NPN Transistor 600V B528

    HLB122L

    Abstract: HLB122
    Text: UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage


    Original     		PDF HLB122 HLB122 O-251 HLB122L QW-R213-014 HLB122L

    NPN Transistor 600V

    Abstract: L13022
    Text: UNISONIC TECHNOLOGIES CO., LTD L13022 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR „ DESCRIPTION 1 The UTC L13022 is a medium power transistor designed for use in switching applications. „ FEATURES * High breakdown voltage


    Original     		PDF L13022 L13022 O-251 L13022L L13022G L13022-TM3-T L13022L-TM3-T L13022G-TM3-T QW-R213-014 NPN Transistor 600V

    NPN Transistor 600V

    Abstract: l13024 NPN Transistor 600V TO-220
    Text: UNISONIC TECHNOLOGIES CO., LTD L13024 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC L13024 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES * High Speed Switching


    Original     		PDF L13024 L13024 L13024L L13024G L13024-TA3-T L13024-TM3-T L13024L-TA3-T L13024L-TM3-T L13024G-TA3-T L13024G-TM3-T NPN Transistor 600V NPN Transistor 600V TO-220

    transistor b1

    Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
    Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage


    Original     		PDF HLB124 HLB124 O-220 HLB124L QW-R203-029 transistor b1 NPN Transistor 600V 1S1000 utchlb124

    smd TRANSISTOR code b6

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd diode code B6 TRANSISTOR SMD MARKING CODE smd code marking BM MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE A1 smd TRANSISTOR code marking AV smd TRANSISTOR marking b6 B6 DIODE schottky
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 PMEM4020ND NPN transistor/Schottky-diode module Product specification 2003 Nov 10 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PMEM4020ND PINNING FEATURES • 600 mW total power dissipation


    Original     		PDF M3D302 PMEM4020ND SCA75 R76/01/pp11 smd TRANSISTOR code b6 MOSFET TRANSISTOR SMD MARKING CODE A1 smd diode code B6 TRANSISTOR SMD MARKING CODE smd code marking BM MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE A1 smd TRANSISTOR code marking AV smd TRANSISTOR marking b6 B6 DIODE schottky

    smd TRANSISTOR code b6

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 MARKING SMD npn TRANSISTOR a1 smd TRANSISTOR marking b6 marking code b6 MOSFET TRANSISTOR SMD MARKING CODE js transistor smd yw PMEM4020ND PMEM4020PD schottky-diode
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D302 PMEM4020ND NPN transistor/Schottky-diode module Product data sheet 2003 Nov 10 NXP Semiconductors Product data sheet NPN transistor/Schottky-diode module FEATURES PMEM4020ND PINNING • 600 mW total power dissipation


    Original     		PDF M3D302 PMEM4020ND R76/01/pp11 smd TRANSISTOR code b6 MOSFET TRANSISTOR SMD MARKING CODE A1 MARKING SMD npn TRANSISTOR a1 smd TRANSISTOR marking b6 marking code b6 MOSFET TRANSISTOR SMD MARKING CODE js transistor smd yw PMEM4020ND PMEM4020PD schottky-diode

    NPN Transistor 600V TO-220

    Abstract: ULB124G ulb124
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES * High Speed Switching


    Original     		PDF ULB124 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T O-251 QW-R213-013 NPN Transistor 600V TO-220 ULB124G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES * High Speed Switching


    Original     		PDF ULB124 ULB124 O-220 ULB124G-xx-TA3-T ULB124G-xx-TM3-T O-251 QW-R213-013

    LB122T

    Abstract: HLB122T to-126 npn switching transistor 400v
    Text: HI-SINCERITY Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching


    Original     		PDF HT200208 HLB122T HLB122T O-126 183oC 217oC 260oC LB122T to-126 npn switching transistor 400v

    HLB122I

    Abstract: transistor k 2837
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2003.04.16 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching


    Original     		PDF HE9030 HLB122I HLB122I O-251 transistor k 2837

    HLB122T

    Abstract: transistor k 2837
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/3 HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching


    Original     		PDF HT200208 HLB122T HLB122T O-126 transistor k 2837

    HLB122I

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching


    Original     		PDF HE9030 HLB122I HLB122I O-251

    HLB122D

    Abstract: TP 1322 Transistor C G 774 6-1 transistor k 2837
    Text: HI-SINCERITY Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HLB122D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122D is a medium power transistor designed for use in switching


    Original     		PDF HD200206 HLB122D HLB122D O-126ML 183oC 217oC 260oC TP 1322 Transistor C G 774 6-1 transistor k 2837

    ULB124

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 „ TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES 1 * High Speed Switching


    Original     		PDF ULB124 O-126 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T ULB124L-xx-T60-T ULB124G-xx-T60-T

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    philips tv smps

    Abstract: BUK454-500B T0220AB
    Text: N AMER PHIL IPS /DISCRETE fc»TE D • fcifc.Sa'm 0030b25 b6S H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 0030b25 BUK454-500B T0220AB BUK454-500B philips tv smps

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    SQD65BB75

    Abstract: sqd65B
    Text: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.


    OCR Scan     		PDF SQP65BB75 SQD65BB75 00DEE22 SQD65BB75 sqd65B

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDER CODES : BULD128DA-1 AND BULD128DB-1 . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS


    OCR Scan     		PDF BULD128D-1 BULD128DA-1 BULD128DB-1

    Untitled

    Abstract: No abstract text available
    Text: forward [ntejuatiokal electronicslid, BC818S SEMICONDUCTOR TECHNICAL DATA. NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS at Tamb=*25*C Characteristic Colectoi>Base Voka^ Colector-EmWer Vokage Emitter-Base Voltage Colector Curreit


    OCR Scan     		PDF BC818S Ta-25Â 100uA 100mA 500mA 300mA 50MHZ 300uSJ

    lte in philips

    Abstract: BUK454-500B T0220AB
    Text: N AMER P H I L I P S / D I S C R E T E fc»TE D • 0 0 3 0 b2 5 b6 S H A P X fcifc.Sa'm Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 0D3Db25 BUK454-500B T0220AB lte in philips BUK454-500B T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is Intended for use in


    OCR Scan     		PDF BUK564-60H SQT404

    NTE74C925

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74LS626 16-Lead DIP, See Diag. 249 Dual Voltage Controlled Oscillator NTE74LS627 14-Lead DIP, See Dlag. 247 Dual Voltage Controlled Oscillator NTE74LS629 16-Lead DIP, See Diag. 249 Dual Voltage Controlled Oscillator


    OCR Scan     		PDF NTE74LS626 16-Lead NTE74LS627 14-Lead NTE74LS629 NTE74LS640, 20-Lead NTE74LS642 NTE74C925