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    TRANSISTOR B 974 Search Results

    TRANSISTOR B 974 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 974 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BF 697

    Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
    Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE


    Original     		PDF NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507

    transistor bf 968

    Abstract: No abstract text available
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O


    Original     		PDF NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968

    014e1

    Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 014e1 transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE68018

    mje 1303

    Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X

    mje 1303

    Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 NE68039-T1 NE68039R-T1 mje 1303 transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    philips blx15

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E ]> • b b S B ' m PDE^S74 bOO « A P X BLX15 _ A H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:


    OCR Scan     		PDF BLX15 7Z67664 philips blx15

    Untitled

    Abstract: No abstract text available
    Text: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to


    OCR Scan     		PDF DD1411L BLY87A

    transistor 9740

    Abstract: No abstract text available
    Text: Dia light Infrared Discrete LED Silicon PNP Photo Transistor 521 -9740 Features • • • • • Silicon PNP type transistor Narrow acceptance angle Daylight filtered Good linearity High reliability A B S O L U T E M A X IM U M R A T IN G S TA=25°C Operating and Storage


    OCR Scan     		PDF MIL-STD-202E, transistor 9740

    Untitled

    Abstract: No abstract text available
    Text: □(□53=131 0035DL.2 715 B A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AMER PHILIPS/DISCRETE DESCRIPTION b7E ]> PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is


    OCR Scan     		PDF 0035DL BFQ19

    BFQ19

    Abstract: UBB774 transistor dc 558 npn 947 transistor A 1282 transistor DGSS D 1652 transistor
    Text: 1^53^31 DGSSDt.2 715 B A P X Philips Sem iconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AUER PHILIPS/DISCRETE DESCRIPTION b7E ]>' PINNING NPN transistor In a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is


    OCR Scan     		PDF BFQ19 DA000 BFQ19 UBB774 transistor dc 558 npn 947 transistor A 1282 transistor DGSS D 1652 transistor

    BLY87A

    Abstract: D-05 blv87
    Text: Ob E N AUER P H I L I P S / D I S C RE T E 86D 01878 r D D bbSBTBl 0 O l m i fa 1 • - BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to


    OCR Scan     		PDF BLY87A jKS84 BLY87A D-05 blv87

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ 7 D 7 b OGliHfl? 373 Ordering number:EN 1042F LB1211 Series NO.1042F Monolithic Digital IC SAKYO i General-Purpose Transistor Array The LB1211 series are general-purpose transistor arrays containing 7 channels 5 channels : LB1217 only . They are especially suited for driving LEDs, lamps, small-sized relays, etc. The transistors can be


    OCR Scan     		PDF 1042F LB1211 LB1217 LB1215 LB1212 LB1212

    2SD646

    Abstract: toshiba 2SD646 U315 AC63
    Text: 5/ ' J 3 > N P N = * f f i « * 1f l B h 5 > 5> ; ^ G - T R SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR(G-TR m it n mm TENTATIVE INDUSTRIAL APPLICATIONS Unit in mm O 9 f S fffì (52 # * m * * (w ñ m m High Power Switching Applications 6&s±ai w b b d


    OCR Scan     		PDF 150Min- 2sd646 Ta-25' 5000100CD 2SD646 toshiba 2SD646 U315 AC63

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-| = 10ki , R2 = 47k£2) Ordering Code Pin Configuration WNs Q62702-C2280 1 =B Package 2=E o Marking BCR 185W II


    OCR Scan     		PDF Q62702-C2280 OT-323 A235b05 aa3Sb05

    23 LM CT05

    Abstract: buz341 MS3456W32-17PW L/Q2N5550
    Text: SIEMENS BUZ 341 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 341 200 V 33 A fbsion 0.07 n Package Ordering Code TO-218AA C67078-S3128-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit


    OCR Scan     		PDF O-218AA C67078-S3128-A2 O-218AA T05-56 23 LM CT05 buz341 MS3456W32-17PW L/Q2N5550

    mw 772

    Abstract: 12L marking
    Text: SIEMENS BF 772 NPN Silicon RF Transistor • For application in TV-sat tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration RAs Q62702-F1222 1 =C 2= E Package 3=B II Marking BF 772 LU Type SOT-143


    OCR Scan     		PDF Q62702-F1222 OT-143 mw 772 12L marking

    CT 1975 sam

    Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the


    OCR Scan     		PDF 2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking

    HFA3102

    Abstract: No abstract text available
    Text: HFA3102 ÎH HARRIS S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Description Features H igh G a in -B a n d w id th P ro d u c t fT . . . . . 1 0G H z • H igh P o w er G a in -B a n d w id th P ro d u ct . . . 5GHz • H igh C u rre n t G a in (h FE) .


    OCR Scan     		PDF HFA3102 HFA3102 982E-01 400E-13 1340nm

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA803T NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS M INI MOLD ¿¡PA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES •


    OCR Scan     		PDF PA803T PA803T 2SC4570) uPA803T

    613 GB 123 CT

    Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT


    OCR Scan     		PDF uPA803T /xPA803T 2SC4570) 613 GB 123 CT transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de

    Ug 78A

    Abstract: BUZ78 BUZ 78
    Text: SIEM EN S SIPMOS Power MOS Transistor Vos lD = 800 V = 1 .5 A ^ D S o n = 8 BUZ 78 Q • N channel • E nhancem ent mode • Package: T O -2 2 0 A B 1) Type Ordering code BUZ 78 C 6 70 78-A 131 8-A2 Maximum Ratings Parameter Symbol Values Unit D rain-so urce voltage


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    MRF172

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF172 The RF MOSFET Line 80 W 2 .0 - 2 0 0 M Hz N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR N-CHANNEL MOS BROADBAND RF POWER . d e s ig n e d p rim a r ily fo r w id e b a n d la rg e - s ig n a l o u tp u t a n d d riv e r


    OCR Scan     		PDF MRF172 MRF172

    Untitled

    Abstract: No abstract text available
    Text: RF Up/Down Conversion Is Simplified By Linear Arrays M AR JRiS S Semiconductor A p p lic a tio n N ote J u ly 1997 Linear Arrays Have Advantages Over Discrete Transistors D iscrete transistors h ave b e e n used to build R F up/dow n co n verte rs in th e p as t b e c a u s e th ey w e re th e only cost effe c­


    OCR Scan     		PDF HFA3046, HFA3096, HFA3127 HFA3128