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    TRANSISTOR B 892 Search Results

    TRANSISTOR B 892 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 892 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NXP SMD ZENER DIODE MARKING CODE

    Abstract: PVR100AZ-B3V3 PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B12V PVR100AZ-B2V5 PVR100AZ-B3V0 PVR100AZ-B5V0
    Text: PVR100AZ-B series Voltage regulator series Rev. 01 — 16 November 2006 Product data sheet 1. Product profile 1.1 General description Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number PVR100AZ-B2V5 Package


    Original     		PDF PVR100AZ-B OT457 PVR100AZ-B2V5 OT223 SC-73 PVR100AD-B2V5 PVR100AZ-B3V0 PVR100AD-B3V0 PVR100AZ-B3V3 PVR100AD-B3V3 NXP SMD ZENER DIODE MARKING CODE PVR100AZ-B3V3 PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B12V PVR100AZ-B2V5 PVR100AZ-B3V0 PVR100AZ-B5V0

    smd transistor marking 329

    Abstract: NXP SMD ZENER DIODE MARKING CODE PVR100AD-B12V Zener diode smd marking sot223 PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B2V5 PVR100AZ-B3V0
    Text: PVR100AD-B series Voltage regulator series Rev. 01 — 31 October 2006 Product data sheet 1. Product profile 1.1 General description Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number PVR100AD-B2V5 Package


    Original     		PDF PVR100AD-B OT223 PVR100AD-B2V5 OT457 SC-74 PVR100AZ-B2V5 PVR100AD-B3V0 PVR100AZ-B3V0 PVR100AD-B3V3 PVR100AZ-B3V3 smd transistor marking 329 NXP SMD ZENER DIODE MARKING CODE PVR100AD-B12V Zener diode smd marking sot223 PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B2V5 PVR100AZ-B3V0

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    TRANSISTOR T 927

    Abstract: 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066
    Text: 1662-2012:QuarkCatalogTempNew 9/14/12 7:45 AM Page 1662 POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 20 LED Spacers, Transistor Sockets, Kits and Insulators Transistor Mounting Kits TO-3 Transistor Sockets These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to


    Original     		PDF Shoulder66 T-13/4 TRANSISTOR T 927 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066

    HVR-1X 7 diode

    Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
    Text: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		PDF O01EC0 TM1061S-L TM1061S-R TM1241S-L TM1241S-R TM1261S-L TM1261S-R TM1641P-L TM1641S-L TM1661P-L HVR-1X 7 diode STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    blw95

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a


    OCR Scan     		PDF bbS3T31 0DS1S14 blw95

    BLX91A

    Abstract: BLX91 R33F 0180 capacitor de polyester MHA IEC134
    Text: N AMER~ PHILIPS/DISCRETE" 86D Dfc-E D • 1^53131 001403t. 01798 JI BLX91A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF tbS3T31 001403t. BLX91A BLX91A BLX91 R33F 0180 capacitor de polyester MHA IEC134

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF Lb53T31 0Dm03L. BLX91A D01404S 7Z68928

    pj 0159

    Abstract: No abstract text available
    Text: PhNip^temicon^ b b 5 3 T 31 0 □ 2 *4T b 7 SMfl Hi AP X AKER P HI L I P S / B I S CRE T E NPN 9 GHz wideband transistor FEATURES • High power gain ^ b7E BFG505; BFG505/X; BFG505/XR PINNING PIN 4 DESCRIPTION • Low noise figure • High transition frequency


    OCR Scan     		PDF BFG505; BFG505/X; BFG505/XR BFG505 BFG505 pj 0159

    t 326 Transistor

    Abstract: 326 Transistor BU 103 A transistor J 326 transistor BU 104 BU326 Q62702-U268 npn transistor w5
    Text: E5C D Ml fl235bOS G0GMÔ4M 'i H S 1 E G , NPN Silicon Power Transistor BU 326 A -SIEMENS AKTIENÛESELLSCHAF BU 3 2 6 A is a triple diffused silicon N PN power switching transistor in TO 3 case 3 B 2 DIN 4 18 7 2 . It is outstanding for short switching times and high dielectric strength and is


    OCR Scan     		PDF 653SbQ5 Q62702-U268 fl23SbaS t 326 Transistor 326 Transistor BU 103 A transistor J 326 transistor BU 104 BU326 Q62702-U268 npn transistor w5

    DAS05

    Abstract: No abstract text available
    Text: Ordering n u m b e r:EN 1801E _ 2SC3676 NPN Triple Diffused Planar Silicon Transistor SA iYO i 900V/300mA High-Voltage Amp, High-Voltage Switching Applications A pplications • High-voltage amplifiers. - High-voltage switching applications. •Dynamic focus applications.


    OCR Scan     		PDF 1801E 2SC3676 00V/300mA 2010C O220AB 80796TS 8-9202/4237AT/3185KI S05D4 DAS05

    transistor tt 2206

    Abstract: TT 2206 transistor transistor BU 102 t 326 Transistor transistor npn 326 BU326 W2206 326 Transistor
    Text: ESC D Ml fl2 3 5 bOS G 0 G M Ô 4 M *] H S 1 E G , NPN Silicon Power Transistor BU 326 A - SIEMENS AKT IENÛ ES ELLS CH AF BU 326 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is


    OCR Scan     		PDF Q62702-U268 0t304 transistor tt 2206 TT 2206 transistor transistor BU 102 t 326 Transistor transistor npn 326 BU326 W2206 326 Transistor

    LT 5251

    Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
    Text: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >


    OCR Scan     		PDF 02SD4711 cycleS50% LT 5251 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564

    2SD234

    Abstract: 2SD235 2SD235 Toshiba 2so234 SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4
    Text: r SILICON NPN DIFFUSED JUNCTION TRANSISTOR o • • 2 s d 234 À 2 s d 235 U n it in mm Audio Power A m p l if i e r A p p l i c a t i o n s ; V CE sat = Q 8 V 1 0 .3 M A X . # 3 ,6 ± a 3 ( T yp .) d c = l A ) 2SD235 ^ : P c = 3 5 w (To = 3 5 ^ ) 3^9 2 S B 4 34 , Z S B i 35 t ^ 7') t


    OCR Scan     		PDF 2so234 2sd235 2SB434, ZSB434 2SB435. 2SD234 220AB 2SD235 2SD235 Toshiba SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4

    TIP2955T

    Abstract: A4S2 TIP3055T T-23-Z
    Text: DEVELOPMENT DATA T h is data sheet c o n ta in s advance in fo rm a t io n a nd TIP2955T sp e cific atio n s are su b ject t o cha nge w it h o u t notice. PHILIPS INTERNATIONAL SbE D • 711005b 0043bG4 2 2 5 H P H I N T -2 3 -Z 1 SILICON EPITAXIAL-BASE POWER TRANSISTOR


    OCR Scan     		PDF TIP2955T 711005b 0043b04 T-23-Z TIP3055T T0-220. 711002h T-33-21 TIP2955T A4S2

    transistor buz

    Abstract: No abstract text available
    Text: S IE M E N S SIPMOS Power MOS Transistor VDS /D ^ D S o n | • • • • • BUZ 70 L = 60 V = 12 A = 0.15 Q N channel Enhancem ent m ode Logic level A valanche-proof Package: T O -2 2 0 A B ' Type Ordering code BUZ 7 0 L C 6 7 0 78-S 1 33 4-A 3 Maximum Ratings


    OCR Scan     		PDF S1L00677 transistor buz

    Beckman 661

    Abstract: 661 Beckman MRF134
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F M O S F E T Line 5.0 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2.0-400 MHz N-CHANNEL MOS BROADBAND RF POWER . . . d e s ig n e d fo r w id e b a n d la rg e -s ig n a l a m p lifie r a n d o s c illa to r


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    m64884

    Abstract: 910 IC
    Text: preliminary nation M its u b is h i ics Cordless Telephone M64884FP Transistor fo r VCO,1st IF M IX,2-m ultiple circuit built-in 500MHz/1GHz Dual PLL Synthesizer 1.DESCRIPTION T he M 64884F P is a 2 -s y s te m 1-chip P LL fre q u e n c y s y n th e ­ size r IC de sig n e d of A n a lo g co rd le ss te le p h o n e f o r N orth


    OCR Scan     		PDF M64884FP 500MHz/1GHz 64884F M64884 m64884 910 IC

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1892 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 892 PO W ER AM PLIFIER APPLICATIONS U nit in mm PO W ER SWITCHING APPLICATIONS Low Collector Saturation Voltage : V e E ( s a t ) = - ° - 5V (Max.) High Power Dissipation


    OCR Scan     		PDF 2SA1892 2SC5029

    2SA1892

    Abstract: 2SC5029
    Text: TOSHIBA 2SA1892 2 S A 1 892 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS • • • • 8.0 ± 0.2 Low Collector Saturation Voltage : VCE (sat)“ —0.5V (Max.) High Power Dissipation


    OCR Scan     		PDF 2SA1892 2SC5029 2SA1892

    2SA1892

    Abstract: 2SC5029
    Text: TO SH IBA 2SA1892 2 S A 1 892 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 8.0 ± 0.2 Low Collector Saturation Voltage : VCE (sat)“ —0.5V (Max.) High Power Dissipation


    OCR Scan     		PDF 2SA1892 2SC5029 2SA1892 2SC5029

    2SA1892

    Abstract: 2SC5029 sh03
    Text: TO SH IBA 2SA1892 2 S A 1 892 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 8.0 ± 0.2 Low Collector Saturation Voltage : VCE (sat)“ —0.5V (Max.) High Power Dissipation


    OCR Scan     		PDF 2SA1892 2SC5029 2SA1892 2SC5029 sh03

    2SA1892

    Abstract: 2SC5029
    Text: T O S H IB A 2SA1892 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 892 PO W ER AM PLIFIER APPLICATIONS U n it in mm PO W ER SWITCHING APPLICATIONS Lo w C o llecto r S a tu ra tio n V o ltag e : V e E ( s a t )= - ° -5V (Max.) H ig h P o w e r D issip a tio n


    OCR Scan     		PDF 2SA1892 2SC5029 2SA1892 2SC5029