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    TRANSISTOR B 745 Search Results

    TRANSISTOR B 745 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 745 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J5603D

    Abstract: FJI5603DTU MH 7404 200H FJI5603D
    Text: FJI5603D NPN Silicon Transistor Applications Equivalent Circuit • High Voltage and High Speed Power Switch Application • Electronic Ballast Application C Features B • Wide Safe Operating Area • Small Variance in Storage Time • Built-in Free Wheeling Diode


    Original     		PDF FJI5603D FJI5603D J5603D FJI5603DTU MH 7404 200H

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    TRANSISTOR BC 206 PNP

    Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
    Text: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V


    OCR Scan     		PDF MDC03 TRANSISTOR BC 206 PNP Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		PDF BUK543-100A/B BUK543 -100A -100B -SOT186

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification POwerMOS transistor BUK543-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		PDF BUK543-100A/B BUK543 -100B PINNING-SOT186

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized


    OCR Scan     		PDF BLW60C nsforFigs16and17:

    BFQ 42 transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T BF0251 PNP video transistor 1998 Oct 06 Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP video transistor BFQ251 FEATURES


    OCR Scan     		PDF BF0251 BFQ251 MSB033 125102/00/04/pp8 BFQ 42 transistor

    s484

    Abstract: 7481A
    Text: TYPES SN5481A, SNS484A. SN7481A. SN7484A 16-BIT RANDOM-ACCESS MEMORIES n i MSI B U L L E T IN NO . DL-S 7 2 1 15 8 1. D E C E M B E R 1972 description Each of these 16-bit active-element memories is a high-speed, m onolithic, transistor-transistor-logic SN6481A . . . J OR W PACKAGE


    OCR Scan     		PDF SN5481A, SNS484A. SN7481A. SN7484A 16-BIT SN5484, s484 7481A

    Philips film capacitors 27 pf

    Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
    Text: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized


    OCR Scan     		PDF BLW60C 00b35b2 7Z772S6 7Z77255 Philips film capacitors 27 pf trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670

    8 pin ic lm 745

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BF588 PNP high-voltage transistor 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES • Low fe e d b a ck capacitance.


    OCR Scan     		PDF BF588 BF585 BF587. MBH792 115002/00/03/pp8 8 pin ic lm 745

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E ]> bb53^31 D O Sm ^Q ^12 IAPX BLW 90 Jl U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f, range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and


    OCR Scan     		PDF bb53T31

    Untitled

    Abstract: No abstract text available
    Text: TTL MSI TYPES SN548ÎA, SN5484A. SN7481A. SN7484A 16-BIT RANDOM-ACCESS MEMORIES B U L L E T I N N O . D L -S 7 2 1 1 5 8 1 , D E C E M B E R 1 9 7 2 description Each o f these 16-bit active-element memories is a high-speed, m o n o lith ic, transistor-transistor-logic


    OCR Scan     		PDF SN548 SN5484A. SN7481A. SN7484A 16-BIT SN5481, SN7481, SN5484, SN7484,

    BFR95

    Abstract: No abstract text available
    Text: PJjjjjP^ejjiconductor^^^^ • bbS3T31 0031flflM ^72 gg^py^Productspecification NPN 3.5 GHz wideband transistor BFR95 N AMER PH ILIP S/ D IS C R ET E DESCRIPTION b*1E D PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.


    OCR Scan     		PDF bbS3T31 0031flflM BFR95 BFR95

    Philips polystyrene capacitors

    Abstract: wf vqe 13 E WF VQE 13 WF VQE 23 E WF VQE 14 A6 WF VQE 21 e ad transistors ai 757 wf vqe 21 f ad WF VQE 22 d WF vqe 13 D
    Text: bSE D B 7110fl2b QDb32b3 T3L H P H I N BLW76 PHILIPS IN T E R N A T I O N A L y v H.F./V.H.F. POW ER T R A N SIST O R N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­


    OCR Scan     		PDF BLW76 7z77457 Philips polystyrene capacitors wf vqe 13 E WF VQE 13 WF VQE 23 E WF VQE 14 A6 WF VQE 21 e ad transistors ai 757 wf vqe 21 f ad WF VQE 22 d WF vqe 13 D

    74LS324

    Abstract: 7400 TTL 74LS327 7402, 7404, 7408, 7432, 7400 80C96 74251 multiplexer 74C923 equivalent Flip-Flop 7473 74LS324 equivalent 74C08 equivalent
    Text: N T E ELECTRONICS INC 17E H ^3125=1 G0G513S Q B - o S V. ! - TRANSISTOR-TRANSISTOR LOGIC INCLUDES SERIES 74C CMOS NTE TYPE NO. •DESCRIPTION . 7214 7400 74C00 74H00 74LS00 74S00 3-State Sel/Mlpx Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos


    OCR Scan     		PDF G0G513S 74C00 74H00 74LS00 74S00 74H01 74LS01 74C02 74LS02 74S02 74LS324 7400 TTL 74LS327 7402, 7404, 7408, 7432, 7400 80C96 74251 multiplexer 74C923 equivalent Flip-Flop 7473 74LS324 equivalent 74C08 equivalent

    relais statique

    Abstract: SGC12006 SGC20420 SGC22006 Celduc Relais IS3030 TRANSISTOR BIPOLAIRE
    Text: 04/94 SGC RELAIS STATIQUE POUR COURANT CONTINU DC SOLID STATE RELAY 20 A 60 ou lor 200 VDC Sortie transistor bipolaire Haut tension B ipolar transistor output H igh voltage Les relais SGC sont des relais statiques de puissance pour courant continu . Ces relais permettent la commutation de charges conti­


    OCR Scan     		PDF 200VDC 20Ampà SGC12006 SGC22006 SGC20420 relais statique Celduc Relais IS3030 TRANSISTOR BIPOLAIRE

    BCR198

    Abstract: KTY 120
    Text: SIEMENS BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47k£2, R2=47kil Type Marking Ordering Code Pin Configuration B C R 198 W Rs 1=B Q62702-C2266 Package 2=E 3=C


    OCR Scan     		PDF 47kil) Q62702-C2266 OT-23 BCR198 KTY 120

    n5460

    Abstract: 2N5460 N5462 P-Channel JFETs 2n5462 2N5461 CONFIGURATION 2N5461 Philips MBB
    Text: Philips Semiconductors VllOflEb DDbflCHl b'ìS • PHIN Data sheet status Prelim inary specifica tio n date of issue O cto b e r 1990 DESCRIPTION P-channel silicon junction fie ld -e ffe ct transistor in a TO-92 plastic envelope. It is intended fo r use as an


    OCR Scan     		PDF 2N5460/5461/5462 7110fl2ti N5460/5461/5462 2N5460 2N5461 N5462 2N5462 n5460 P-Channel JFETs CONFIGURATION 2N5461 Philips MBB

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att A m plifier Transistor BDC01D NPN Silicon COLLECTOR 2 1 EMITTER MAXIMUM RATINGS R ating C ollector-E m itter Voltage Symbol BDC01D Vdc Unit V C EO 100 C o llecto r-B ase Voltage VCBO 100 Vdc E m itte r-B a s e Voltage


    OCR Scan     		PDF BDC01D

    Untitled

    Abstract: No abstract text available
    Text: Ordering n u m ber: EN 1 6 1 4 B _ 2SC3636 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.


    OCR Scan     		PDF 2SC3636 VCC-200V T03PB 4227KI/3095KI/N174KI 0Q2DB57

    TRANSISTOR C 2577

    Abstract: transistor A62
    Text: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF957 PINNING - SOT323 FEATURES • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector


    OCR Scan     		PDF PRF957 OT323 AM062 /printrun/ed/pp14 TRANSISTOR C 2577 transistor A62

    SG 2058

    Abstract: transistor A62
    Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF947 FEATURES PINNING - SOT323 • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector


    OCR Scan     		PDF PRF947 OT323 MAM062 /printrun/ed/pp14 SG 2058 transistor A62

    MARKING CODE 24

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T PDTC114TE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 03 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF PDTC114TE PDTC114TE 115104/00/02/pp8 MARKING CODE 24

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Dec 15 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 03 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF PDTC123JE SC-75 115104/00/02/pp8