BFG32
Abstract: No abstract text available
Text: P h ilip s Sem iconductors b b SB ^ B l O O B im b 7^5 • Product specification APX £ PNP 5 GHz wideband transistor BFG32 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in
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BFG32
OT103
BFG96.
BFG32
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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philips blx15
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E ]> • b b S B ' m PDE^S74 bOO « A P X BLX15 _ A H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:
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BLX15
7Z67664
philips blx15
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mitsubishi top marking
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
mitsubishi top marking
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RD09MUP2
Abstract: TRANSISTOR D 1765 720 L 0619 1788
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
TRANSISTOR D 1765 720
L 0619
1788
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TRANSISTOR D 1765 320
Abstract: RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 RD09MUP2 mitsubishi top side marking 1776 ER48 transistor mosfet 4425
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
TRANSISTOR D 1765 320
RF high POWER TRANSISTOR
TRANSISTOR D 1765
marking 929 922
mitsubishi top side marking
1776
ER48
transistor mosfet 4425
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transistor fp 1016
Abstract: BFQ34T ON4497 FP 801 UBB361
Text: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The
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ON4497)
BFQ34T
transistor fp 1016
BFQ34T
ON4497
FP 801
UBB361
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband
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Q0311b7
BFG34
MSB037
ON4497)
OT103.
CECC50
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) 4.2+/-0.2 (d) 5.6+/-0.2 6.2+/-0.2 (3.6) 8.0+/-0.2 0.65+/-0.2 (b) RD09MUP2 is a MOS FET type transistor
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
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BUK455-60A
Abstract: K455-60A BUK455-60B diode d2s BUK455 T0220AB k455
Text: N AMER PHILIPS/DISCRETE LTE D ^53^31 □□3Db4Q TTl HiAPX Product Specification Philips Semiconductors B U K455-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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Q03DLi40
K455-60A/B
T0220AB
BUK455
BUK455-60A
K455-60A
BUK455-60B
diode d2s
T0220AB
k455
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Transistor C G 774 6-1
Abstract: transistor 2N4033 2N4033
Text: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53
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2N4033
Transistor C G 774 6-1
transistor 2N4033
2N4033
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BFG134
Abstract: bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379
Text: P hilip ^em icon d u cto r^^ ^ b t iS B 'ìB l 0031315 16D • A P X ^^P ro du c^p eo lficatio n NPN 7 GHz wideband transistor BFG134 N AHER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-tead double-emitter plastic SOT103 envelope, intended for
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BFG134
BFG134
bt 1690 transistor
transistor bt 1630
resistor 2322 194 philips
bt 1690 philips
2222 372
DD313
752 J 1600 V CAPACITOR
LC 3524
2222 379
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BUK445
Abstract: BUK445-60A BUK445-60B
Text: b 5 E T> B PHILIPS INTERNATIONAL 7110a2b DDb 3 Tflb TOT • P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK445-60A/B
-SOT186
DS/V-12/
ID/100
BUK445
BUK445-60A
BUK445-60B
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BUK455
Abstract: BUK455-60A BUK455-60B T0220AB
Text: PHILIPS INTERNATIONAL hSE D E9 TllDflSb D D b M O T b 71T • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK455-60A/B
T0220AB
BUK455
BUK455-60A
BUK455-60B
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transistor c 548
Abstract: transistor C 548 B transistor 547 b transistor C 547 c transistor c 548 c C 547 B C 547 transistor transistor b 548 transistor C 547 C 547 C
Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LT A G E : BC546, V CEo=65V • L O W NOISE: BC549, B C5S0 • Complement to BC556 . B C 560 ABSOLUTE MAXIMUM RATINGS <TA=25t C h aracte ristic Sym b o l Collector Base Voltage
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BC546/547/548/549/550
BC546,
BC549,
BC556
BC546
BC547/550
BC548/549
BC546
BC547/550
BC548/549/550
transistor c 548
transistor C 548 B
transistor 547 b
transistor C 547 c
transistor c 548 c
C 547 B
C 547 transistor
transistor b 548
transistor C 547
C 547 C
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Transistor marking BQ
Abstract: marking BQ BQ MARKING transistor BQ
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03
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WBFBP-03B
WBFBP-03B
TPC5658NND03
TPA2029NND03
100MHz
TPC5658NND03
Transistor marking BQ
marking BQ
BQ MARKING
transistor BQ
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TRANSISTOR FQ
Abstract: transistor marking fq FS transistor marking marking FQ fq transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPA2029NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION PNP Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPC5658NND03
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WBFBP-03B
WBFBP-03B
TPA2029NND03
TPC5658NND03
--50A
-50mA
30MHz
TPA2029NND03
TRANSISTOR FQ
transistor marking fq
FS transistor marking
marking FQ
fq transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPA2029NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION PNP Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPC5658NND03
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WBFBP-03B
WBFBP-03B
TPA2029NND03
TPC5658NND03
-50mA
30MHz
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Transistor marking BQ
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03
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WBFBP-03B
WBFBP-03B
TPC5658NND03
TPA2029NND03
100MHz
Transistor marking BQ
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micro strip line
Abstract: RD09MUP2
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a (b) 7.0+/-0.2 0.2+/-0.05 RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
micro strip line
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BFQ 42 transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T BF0251 PNP video transistor 1998 Oct 06 Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP video transistor BFQ251 FEATURES
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BF0251
BFQ251
MSB033
125102/00/04/pp8
BFQ 42 transistor
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BUK475
Abstract: BUK455-60A BUK475-60B BUK475-60A
Text: Product specification Philips Semiconductors PowerMOS transistor Isolated version of BUK455-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended foruse in Switched Mode Power Supplies SMPS ,
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BUK475-60A/B
BUK455-60A/B
-SOT186A
BUK475
045urer
OT186A;
BUK455-60A
BUK475-60B
BUK475-60A
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Transistor C G 774 6-1
Abstract: 2N3440
Text: 2N3440 High Voltage Transistor Features: • NPN High Voltage Silicon Transistor. • High Voltage Silicon Planar Transistors used in High Voltage and High Power Amplifier Applications. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74
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2N3440
Transistor C G 774 6-1
2N3440
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BUK445
Abstract: BUK445-60A BUK445-60B
Text: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711002b
BUK445-60A/B
-SOT186
DS/V-12/
ID/100
BUK445
BUK445-60A
BUK445-60B
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