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    TRANSISTOR B 103 Search Results

    TRANSISTOR B 103 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 103 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC846A/B, BC847A/B/C, BC848A/B/C 250mW, OT-23 MIL-STD-202, MGT724

    RF sot-23

    Abstract: transistor 1f sot-23 F11 SOT23 transistor marking code SOT-23 BC847A transistor 1g sot-23 marking code BE sot-23 1E SOT23 F11 SOT 23 F11 SOT23-3
    Text: BC846A/B, BC847A/B/C, BC848A/B/C 200mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC846A/B, BC847A/B/C, BC848A/B/C 200mW, OT-23 MIL-STD-202, C/10s 008gram MGT724 RF sot-23 transistor 1f sot-23 F11 SOT23 transistor marking code SOT-23 BC847A transistor 1g sot-23 marking code BE sot-23 1E SOT23 F11 SOT 23 F11 SOT23-3

    transistor 1f sot-23

    Abstract: transistor marking code SOT-23 1B SOT-23 1k sot-23 NPN BC846B SOT23 BC846B BC847A 1a sot-23 BC847C BC848A
    Text: BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC846A/B, BC847A/B/C, BC848A/B/C 250mW, OT-23 MIL-STD-202, MGT724 transistor 1f sot-23 transistor marking code SOT-23 1B SOT-23 1k sot-23 NPN BC846B SOT23 BC846B BC847A 1a sot-23 BC847C BC848A

    transistor s11 s12 s21 s22

    Abstract: NE856M02-T1-AZ NE856M02
    Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor


    Original     		PDF OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR „ DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8550 HE8550 HE8050 HE8550-x-AB3-R HE8550-x-AE3-R HE8550-x-T92-B HE8550-x-T92-K HE8550-x-T9N-B HE8550-x-T9N-K HE8550L-x-AB3-R

    UTC8050S

    Abstract: c8050s UTC 8050SL transistor marking D9
    Text: UNISONIC TECHNOLOGIES CO., LTD 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR 2 DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and


    Original     		PDF 8050S 8050S 700mA 8550S OT-23 8050SL 8050S-AE3-R 8050SL-AE3-R OT-23 QW-R206-001 UTC8050S c8050s UTC 8050SL transistor marking D9

    HE8550G

    Abstract: he8050 HE8550
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR „ DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8550 HE8550 HE8050 HE8550-x-AB3-R HE8550-x-AE3-R HE8550-x-T92-B HE8550-x-T92-K HE8550-x-T9N-B HE8550-x-T9N-K HE8550L-x-AB3-R HE8550G he8050

    BFG32

    Abstract: No abstract text available
    Text: P h ilip s Sem iconductors b b SB ^ B l O O B im b 7^5 • Product specification APX £ PNP 5 GHz wideband transistor BFG32 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in


    OCR Scan     		PDF BFG32 OT103 BFG96. BFG32

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    transistor marking WV2

    Abstract: No abstract text available
    Text: wmmt B FQ67/B FQ67 R/B FQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated


    OCR Scan     		PDF FQ67/B FQ67W BFQ67 BFQ67R BFQ67W 20-Jan-99 transistor marking WV2

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors b b S 3 ^31 0055^55 577 M IN AMER PHILIPS/DISCRETE APX Product specification b 7 E l - NPN general purpose transistor FEATURES PMSS3904 PIN CONFIGURATION • S-mini package. DESCRIPTION NPN transistor in a plastic SOT323


    OCR Scan     		PDF PMSS3904 OT323 MAM062 bbS3R31

    K545

    Abstract: BUK545 BUK545-200A BUK545-200B
    Text: PHILIPS INTERNATIONAL b5E D B TllOflEb ODbMEOb Ibfl B P H I N Product Specification Philips Semiconductors BU K545-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		PDF 7110flEb K545-200A/B -SOT186 BUK545 -200A K545 BUK545-200A BUK545-200B

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor b b 53T 31 0014fi3 b 2 BUZ311 : 3,_ „ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 0014fi3 BUZ311 T0218AA; T-39-11

    transistor tt 2222

    Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
    Text: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF LY93A BLY93A transistor tt 2222 BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56

    Untitled

    Abstract: No abstract text available
    Text: PhlHps^Semiconductors_ M b b 5 3 H 31 0 0 313 3 H 314 H APX Product specification NPN 7 GHz wideband transistor BFG195 N AUER PHIL IPS/DISCRETE DESCRIPTION bHE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband


    OCR Scan     		PDF BFG195

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband


    OCR Scan     		PDF Q0311b7 BFG34 MSB037 ON4497) OT103. CECC50

    1032UNF

    Abstract: BLW60 SOT-56 sot56 IEC134
    Text: bSE J> m 711DÖ Bb □ □ b 3 2 4 c] bbb MAINTENANCE TYPE IPHIN BLW60 PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized.


    OCR Scan     		PDF BLW60 f51MHz 7Z67070 1032UNF BLW60 SOT-56 sot56 IEC134

    Untitled

    Abstract: No abstract text available
    Text: • TRANSISTOR MODULE 7 ^ 1 5 4 3 000S1A5 H13 QCA100A/QBB100A40/60 UL;E76102 M Q C A 1 0 0 A and Q B B 1 OOA is a dual Darlin­ gton power transistor module with two high speed, high power Darlington transis­ tors. Each transistor has a reverse paral­ leled fast recovery diode.


    OCR Scan     		PDF 000S1A5 QCA100A/QBB100A40/60 E76102 400/600V QCA100A/QBB100A

    Untitled

    Abstract: No abstract text available
    Text: 0Q247fll D5b B A P X Philips Semiconductors N AUER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION Product specification b?E ]> S BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with double emitter bonding.


    OCR Scan     		PDF 0Q247fll BFG17A OT143.

    BFQ65

    Abstract: No abstract text available
    Text: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz


    OCR Scan     		PDF QQ31S BFQ65 BFQ65

    Untitled

    Abstract: No abstract text available
    Text: P h ilip ^ e m ic o n d u c to r^ ^ ^ • b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are


    OCR Scan     		PDF BFQ135 OT172A1

    BFG65

    Abstract: transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332
    Text: Philips Semiconductors b b S B 'ÌB l G0 3 i n 3 SCH • AP X Product specification NPN 8 GHz wideband transistor — — — — BFG65 N APIER P H IL IP S /D IS C R E T E b'JE ]> DESCRIPTION NPN transistor in a four-lead dual emitter plastic envelope SOT103 .


    OCR Scan     		PDF BFG65 OT103) MSB037 OT103. BFG65 transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332

    E2p 96 transistor

    Abstract: BFS17 BFS17A MSB003
    Text: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


    OCR Scan     		PDF 711Dflgb BFS17A MSB003 E2p 96 transistor BFS17

    BFG134

    Abstract: bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379
    Text: P hilip ^em icon d u cto r^^ ^ b t iS B 'ìB l 0031315 16D • A P X ^^P ro du c^p eo lficatio n NPN 7 GHz wideband transistor BFG134 N AHER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-tead double-emitter plastic SOT103 envelope, intended for


    OCR Scan     		PDF BFG134 BFG134 bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379