Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR ARRAY MIXER Search Results

    TRANSISTOR ARRAY MIXER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ARRAY MIXER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 7555 datasheet

    Abstract: NE 7555 200E 400E 500E HFA3102 HFA3102B96 NF50 UPA102G
    Text: HFA3102 Data Sheet May 2003 FN3635.4 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 FN3635 HFA3102 10GHz) 10GHz IC 7555 datasheet NE 7555 200E 400E 500E HFA3102B96 NF50 UPA102G

    H3101B

    Abstract: HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration
    Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) FN3663 UPA101 H3101B HFA3101B HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration

    pspice

    Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G UHF-1
    Text: HFA3102 Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 HFA3102 10GHz) 10GHz pspice NE 7555 500E 800E HFA3102B HFA3102B96 NF50 UPA102G UHF-1

    10GHz oscillator

    Abstract: Dual Long-Tailed Pair Transistor Array m14 transistor TRANSISTOR 10GHZ HFA3102 UPA102G TRANSISTOR ARRAY transistor array high frequency "pin to pin" HFA3102B
    Text: HFA3102 TM Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 HFA3102 10GHz) 10GHz 1-888-INTERSIL 10GHz oscillator Dual Long-Tailed Pair Transistor Array m14 transistor TRANSISTOR 10GHZ UPA102G TRANSISTOR ARRAY transistor array high frequency "pin to pin" HFA3102B

    HFA3102BZ96

    Abstract: NE 7555 HFA3102 HFA3102B96 HFA3102BZ NF50 UPA102G
    Text: HFA3102 Data Sheet July 14, 2005 FN3635.5 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 FN3635 HFA3102 10GHz) 10GHz HFA3102BZ96 NE 7555 HFA3102B96 HFA3102BZ NF50 UPA102G

    HFA3101

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
    Text: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz

    transistor npn c 9012

    Abstract: HFA3101BZ 5GHz band pass filter
    Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) FN3663 UPA101 transistor npn c 9012 HFA3101BZ 5GHz band pass filter

    data sheet transistor 9018 NPN

    Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G 12E-09
    Text: HFA3102 TM Data Sheet September 2001 File Number 3635.3 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 HFA3102 10GHz) 10GHz CH-1009 data sheet transistor 9018 NPN NE 7555 500E 800E HFA3102B HFA3102B96 NF50 UPA102G 12E-09

    Untitled

    Abstract: No abstract text available
    Text: HFA3102 Data Sheet July 14, 2005 FN3635.5 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 FN3635 HFA3102 10GHz) 10GHz

    kf 8715

    Abstract: 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96
    Text: HFA3101 Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) 10GHz kf 8715 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96

    HFA3101

    Abstract: 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair
    Text: HFA3101 TM Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) 10GHz 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair

    smd transistor 304

    Abstract: ISL73096RHVX AN9315 "PNP Transistor array" fabrication GAMMA Radiation Detector TRANSISTOR PNP 5GHz 5962F0721801V9A ISL73096RH smd transistor pinout pnp 8 transistor array
    Text: ISL73096RH Data Sheet March 29, 2007 Radiation Hardened Ultra High Frequency NPN-PNP Transistor Array The ISL73096RH is a radiation hardened transistor array consisting of three NPN transistors and two PNP transistors on a common substrate. One of our bonded wafer,


    Original     		PDF ISL73096RH ISL73096RH FN6475 smd transistor 304 ISL73096RHVX AN9315 "PNP Transistor array" fabrication GAMMA Radiation Detector TRANSISTOR PNP 5GHz 5962F0721801V9A smd transistor pinout pnp 8 transistor array

    4948 transistor bf

    Abstract: 7555 harris NE 7555 p 8123 transistor V 7271 U 500E 800E HFA3102 HFA3102B HFA3102B96
    Text: HFA3102 S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1996 Features Description • High Gain-Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on


    Original     		PDF HFA3102 10GHz HFA3102 10GHz) 4948 transistor bf 7555 harris NE 7555 p 8123 transistor V 7271 U 500E 800E HFA3102B HFA3102B96

    V 7271 U

    Abstract: 421506 4948 transistor bf IC 7555 datasheet 7555 harris Dual Long-Tailed Pair Transistor Array NE 7555 T 3108 001 TOP 100-124 500E
    Text: HFA3102 S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Features Description • High Gain-Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on


    Original     		PDF HFA3102 10GHz HFA3102 10GHz) V 7271 U 421506 4948 transistor bf IC 7555 datasheet 7555 harris Dual Long-Tailed Pair Transistor Array NE 7555 T 3108 001 TOP 100-124 500E

    kf 8715

    Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
    Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI


    Original     		PDF HFA3101 10GHz HFA3101 10GHz) 390nH 825MHz 900MHz 75MHz 76MHz kf 8715 fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E

    5962F9764101VEA

    Abstract: 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS-6254RH HS9-6254
    Text: HS-6254RH Data Sheet August 1999 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides


    Original     		PDF HS-6254RH HS-6254RH 5962F9764101VEA 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS9-6254

    4 npn transistor ic 14pin

    Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
    Text: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package


    Original     		PDF PA101 PA101B: 14-pin PA101G: PA101B-E1 4 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6

    ULN2054A

    Abstract: 8035A ULN-2031 Independent Transistor Array
    Text: SPR AGUE /S EN IC ON D GROUP ^3 8514 0 19 SPRAGUE. D S E M I C O N D S / ICS • ÛS1B05G □□□3ûlû T ■ 93D 0 3 8 1 8 2> ~7~~V2-2S~ ULN-2054A TRANSISTOR ARRAY ULN-2054A TRANSISTOR ARRAY Dual Independent Differential Amplifiers T HE ULN-2054A is a transistor array consisting


    OCR Scan     		PDF S1B05G ULN-2054A ULN-2031A LN-2086A, ULS-2045H ULS-2083H, ULN2054A 8035A ULN-2031 Independent Transistor Array

    A3102

    Abstract: HFA3102 Dual Long-Tailed Pair Transistor Array M14.15 Package
    Text: HF A3102 Semiconductor A u g u s t 19 96 D a ta S h e e t Dual Long-Tailed Pair Transistor Array The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Harris bonded wafer UHF-1 SOI process, this array achieves


    OCR Scan     		PDF A3102 HFA3102 10GHz) 10GHz UPA102G HFA3102 1-800-4-HARRIS A3102 Dual Long-Tailed Pair Transistor Array M14.15 Package

    815 transistor

    Abstract: HFA3101 3101-B noise cancellation IC 3101b
    Text: 80 HARRIS HFA3101 SEMICONDUCTOR Gilbert Cell UHF Transistor Array November 1996 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded water UHF-1 SOI


    OCR Scan     		PDF HFA3101 HFA3101 10GHz) 10GHz 815 transistor 3101-B noise cancellation IC 3101b

    HFA3101

    Abstract: No abstract text available
    Text: HFA3101 Semiconductor S e p te m b e r 1998 F ile N u m b e r 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI process, this array achieves very high fy 10GHz while


    OCR Scan     		PDF HFA3101 HFA3101 10GHz) 10GHz

    Untitled

    Abstract: No abstract text available
    Text: HFA3102 Semiconductor Dual Long-Tailed Pair Transistor Array August 1996 Description Features High Gain-Bandwidth Product fy . . . . 10GHz High Power Gain-Bandwidth Product . . 5GHz High Current Gain (h p ^ ). 70 Noise Figure (Transistor).


    OCR Scan     		PDF HFA3102 10GHz HFA3102 10GHz) 1340nm 1320nm 1320um

    UN 2911

    Abstract: No abstract text available
    Text: ¡si H a r r i <33 semiconductor HFA3046, HFA3096, HFA3127, HFA3128 s Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT .8GHz • NPN Current Gain (h FE) .70


    OCR Scan     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 UN 2911

    u101b

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


    OCR Scan     		PDF uPA101B 14-pin tPA101G u101b