TRANSISTOR AAC Search Results

TRANSISTOR AAC Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR AAC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
8201NG Abstract: NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4 Text: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGD8201N NGD8201N/D 8201NG NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4	PDF
8201NG Abstract: 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G Text: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGD8201N NGD8201N/D 8201NG 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G	PDF
8204NG Abstract: GB8204N NGB8204N NGB8204NT4 NGB8204NT4G Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8204N NGB8204N/D 8204NG GB8204N NGB8204N NGB8204NT4 NGB8204NT4G	PDF
8245NG Abstract: No abstract text available Text: NGB8245N Ignition IGBT 20 Amp, 450 Volt, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8245N NGB8245N/D 8245NG	PDF
8205NG Abstract: NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G Text: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGD8205N NGD8205N/D 8205NG NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G	PDF
B8204 Abstract: NGB8204N NGB8204NT4 Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8204N NGB8204N/D B8204 NGB8204N NGB8204NT4	PDF
8204NG Abstract: GB8204 NGB8204N NGB8204NT4 NGB8204NT4G GB8204NG Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8204N NGB8204N/D 8204NG GB8204 NGB8204N NGB8204NT4 NGB8204NT4G GB8204NG	PDF
NGD 8205NG Abstract: 8205NG NGD8205N NGD8205NT4 NGD8205NT4G Text: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGD8205N NGD8205N/D NGD 8205NG 8205NG NGD8205N NGD8205NT4 NGD8205NT4G	PDF
0005P Abstract: 350VVGE Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8204N NGB8204N/D 0005P 350VVGE	PDF
8205N Abstract: 8205 NGD8205N NGD8205NT4 0000001D Text: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGD8205N NGD8205N/D 8205N 8205 NGD8205N NGD8205NT4 0000001D	PDF
G18N40B Abstract: N40B NGD18N40CLBT4 NGD18N40CLB aac marking g18n40 Text: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGD18N40CLBT4 NGD18N40CLB/D G18N40B N40B NGD18N40CLBT4 NGD18N40CLB aac marking g18n40	PDF
8201N Abstract: NGD8201N NGD8201NT4 Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGD8201N NGD8201N/D 8201N NGD8201N NGD8201NT4	PDF
Untitled Abstract: No abstract text available Text: NGP8203N Ignition IGBT 20 A, 400 V, N−Channel TO−220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGP8203N NGP8203N/D	PDF
Untitled Abstract: No abstract text available Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D	PDF

NGB8202NT4G Abstract: NGB8202AN NGB8202ANT4G NGB8202N NGB8202A Text: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8202N, NGB8202AN NGB8202N/D NGB8202NT4G NGB8202AN NGB8202ANT4G NGB8202N NGB8202A	PDF
18n40b Abstract: GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D Text: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB18N40CLBT4 NGB18N40CLB/D 18n40b GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D	PDF
8201N Abstract: NGD8201N NGD8201NT4 Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGD8201N NGD8201N/D 8201N NGD8201N NGD8201NT4	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
jedec Package TO-39 Abstract: TRANSISTOR 545 buy49s Text: rZ 7 S G S -T H O M S O N RitlO [^©gLlig?i@MB01_ BUY49S SILICON NPN TRANSISTOR . • . ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION	OCR Scan	BUY49S jedec Package TO-39 TRANSISTOR 545	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
BF 145 transistor Abstract: transistor bf 968 transistor bf 600 BF968 Q62702-F612 BF 500 transistor Text: E5E D • fl235bOS aoaMSaa 1 ■ SIEG ■ PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 968 D - fo r in p u t stages up to 9 0 0 M H z BF 9 6 8 is a PNP silicon UHF planar transistor w ith passivated surface in a low-capacitance	OCR Scan	T0119 Q62702-F612 BF 145 transistor transistor bf 968 transistor bf 600 BF968 Q62702-F612 BF 500 transistor	PDF
BUV26 Abstract: No abstract text available Text: S G S -T H O M S O N BUV26 NPN FAST SWITCHING TRANSISTOR • LOW SATURATION VOLTAGE ■ FAST TURN-ON AND TURN-OFF ■ BASE DRIVE SPECIFIED FOR DIFFERENT VALUES O F lc ■ W IDE SURGE AREA D E S C R IP T IO N High speed transistor suited for low voltage applica	OCR Scan	BUV26 BUV26	PDF

TRANSISTOR AAC Search Results

TRANSISTOR AAC Result Highlights (5)

TRANSISTOR AAC Datasheets Context Search

8201NG

8201NG

8204NG

8245NG

8205NG

B8204

8204NG

NGD 8205NG

0005P

8205N

G18N40B

8201N

Untitled

Untitled

NGB8202NT4G

18n40b

8201N

la 4440 amplifier circuit diagram 300 watt

jedec Package TO-39

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

BF 145 transistor

BUV26