BA2rc
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288118
288M-BIT
PD48288118
BA2rc
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288118
288M-BIT
PD48288118
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ST3403
Abstract: No abstract text available
Text: P Channel Enchancement Mode MOSFET ST3403 -3.5A DESCRIPTION The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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ST3403
ST3403
OT-23-3L
-30V/-2
105m-ohm
115m-ohm
-4OT-23-3L
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p144f
Abstract: TDK EF25 BAP36 PD482
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118-A 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288118-A
288M-BIT
PD48288118-A
M8E0904E
p144f
TDK EF25
BAP36
PD482
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288118
288M-BIT
PD48288118
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Untitled
Abstract: No abstract text available
Text: Datasheet PD48288118-A 288M-BIT Low Latency DRAM Separate I/O R10DS0157EJ0100 Rev.1.00 Feb 01, 2013 Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288118-A
288M-BIT
R10DS0157EJ0100
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Untitled
Abstract: No abstract text available
Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48576109
PD48576118
576M-BIT
864-word
PD48576118
R10DS0064EJ0200
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet PD48288109A μPD48288118A R10DS0098EJ0001 Rev.0.01 August 2, 2011 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288109A
PD48288118A
R10DS0098EJ0001
288M-BIT
PD48288109A
432-word
PD48288118A
216-word
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Untitled
Abstract: No abstract text available
Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0100 Rev.1.00 February 28, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288109A
PD48288118A
288M-BIT
432-word
PD48288118A
216-word
R10DS0098EJ0100
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Untitled
Abstract: No abstract text available
Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288109A
PD48288118A
288M-BIT
432-word
PD48288118A
216-word
R10DS0098EJ0200
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Untitled
Abstract: No abstract text available
Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0300 Rev.3.00 Oct 01, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288109A
PD48288118A
288M-BIT
432-word
PD48288118A
216-word
R10DS0098EJ0300
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Untitled
Abstract: No abstract text available
Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48576109
PD48576118
576M-BIT
864-word
PD48576118
R10DS0064EJ0300
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PD48576109,
Abstract: No abstract text available
Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0100 Rev.1.00 September 27, 2011 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48576109
PD48576118
576M-BIT
864-word
PD48576118
R10DS0064EJ0100
PD48576109,
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BA1 K11
Abstract: ba1d1a PD48576118FF-E24-DW1-A
Text: Preliminary Datasheet PD48576109-A μPD48576118-A R10DS0064EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Separate I/O Description The μPD48576109-A is a 67,108,864-word by 9 bit and the μPD48576118-A is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48576109-A
PD48576118-A
R10DS0064EJ0001
PD48576109-A
864-word
PD48576118-A
BA1 K11
ba1d1a
PD48576118FF-E24-DW1-A
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FTF7040M
Abstract: 74ACT04 BAS28 BG40 ccd application vns Dalsa
Text: IMAGE SENSORS DATA SHEET FTF7040M in PGA 28M Full-Frame CCD Image Sensor Preliminary product specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Preliminary Specification 28M Full-Frame CCD Image Sensor • 28M active pixels 7168H x 4096V
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FTF7040M
7168H
74ACT04
BAS28
BG40
ccd application vns
Dalsa
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transistor npn d 2058
Abstract: FTF2020 FT2020M CG1 HOYA ccd application vns FTF2020M CCD IMAGE Dalsa FT202 pnp transistor 9015
Text: IMAGE SENSORS DATA SHEET FTF2020M 4M Full Frame CCD Image Sensor Product specification DALSA Professional Imaging 2007 April 10 DALSA Professional Imaging Product Specification 4M Full-Frame CCD Image Sensor FTF2020M • Image format 24 x 24 mm • 4M active pixels (2048H x 2048V)
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transistor npn d 2058
FTF2020
FT2020M
CG1 HOYA
ccd application vns
FTF2020M
CCD IMAGE
Dalsa
FT202
pnp transistor 9015
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ccd color Linear Image Sensor
Abstract: CCD Linear Image Sensor diode a4W FTF5033C 5717 Diode Mark D10 N10 a1w* transistor A1W TRANSISTOR ccd image sensor linear ccd sensor
Text: IMAGE SENSORS DATA SHEET FTF5033C 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033C 35mm film compatible image format
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FTF5033C
4992H
ccd color Linear Image Sensor
CCD Linear Image Sensor
diode a4W
FTF5033C
5717
Diode Mark D10 N10
a1w* transistor
A1W TRANSISTOR
ccd image sensor
linear ccd sensor
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FTF5033M
Abstract: asp 962 image sensor CCD IMAGE ccd image sensor diode a4W BAS28 BAT74 BC860C BFR92
Text: IMAGE SENSORS DATA SHEET FTF5033M 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033M 35mm film compatible image format
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4992H
FTF5033M
asp 962
image sensor
CCD IMAGE
ccd image sensor
diode a4W
BAS28
BAT74
BC860C
BFR92
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FTF5066M
Abstract: B688 Transistor TG p10 CCD IMAGE ccd image sensor Dalsa 75151 CCD Linear Image Sensor dalsa cmos diode a4W
Text: IMAGE SENSORS DATA SHEET FTF5066M 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066M • Image format 36 x 48 mm • 33M active pixels (4992H x 6668V)
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FTF5066M
B688
Transistor TG p10
CCD IMAGE
ccd image sensor
Dalsa
75151
CCD Linear Image Sensor
dalsa cmos
diode a4W
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FTF4052
Abstract: FTF4027 tp 4056 datasheet Melles Griot amplifier ccd color Linear Image Sensor CCD IMAGE diode a4W tp 4056 a4w 41 A1W TRANSISTOR
Text: IMAGE SENSORS DATA SHEET FTF4027C 11M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2009 April 24 DALSA Professional Imaging Preliminary Specification 11M Full-Frame CCD Image Sensor FTF4027C • 35mm film compatible image format 36 x 24 mm
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4008H
FTF4052
FTF4027
tp 4056 datasheet
Melles Griot amplifier
ccd color Linear Image Sensor
CCD IMAGE
diode a4W
tp 4056
a4w 41
A1W TRANSISTOR
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a4w transistor
Abstract: No abstract text available
Text: IMAGE SENSORS DATA SHEET FTF5033C 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2007, March 01 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033C 35mm film compatible image format
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4992H
a4w transistor
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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