PD48576109,
Abstract: No abstract text available
Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0100 Rev.1.00 September 27, 2011 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48576109
PD48576118
576M-BIT
864-word
PD48576118
R10DS0064EJ0100
PD48576109,
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Untitled
Abstract: No abstract text available
Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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Original
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PDF
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PD48576109
PD48576118
576M-BIT
864-word
PD48576118
R10DS0064EJ0200
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