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    TRANSISTOR A23 Search Results

    TRANSISTOR A23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 4556

    Abstract: 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939
    Text: 2SC D • a23SbOS OQOMSSb 4 WÊSIZ6 . PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 939 4556 D - BF 93 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VH F input stages in TV tuners.


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    PDF a23SbOS 62702-F G--14 IC 4556 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939

    TRANSISTOR G13

    Abstract: c 939 transistor bf 4556 d BF939
    Text: 2SC D • a23SbOS OQOMSSb 4 W Ê S I Z 6 . PNP Silicon Planar Transistor SIEMENS AK TI EN GES EL LSC HAF BF 939 45 56 D - BF 9 3 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.


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    PDF Q62702-F fl235b05 0Q04557 TRANSISTOR G13 c 939 transistor bf 4556 d BF939

    transistor BD 800

    Abstract: transistor BD 110
    Text: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal


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    PDF A235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 800 transistor BD 110

    K1 transistor

    Abstract: pnp vhf transistor
    Text: 25C D • 523SbQS QDQMS3‘i 4 WiSIZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 236 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,


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    PDF 523SbQS BF767 Q62702-F553 K1 transistor pnp vhf transistor

    Transistor C G 774 6-1

    Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
    Text: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods


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    PDF A23StiGS dG04hlt. Q62702-F527 235b05 000Mb22 BFQ28 Transistor C G 774 6-1 C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1

    Untitled

    Abstract: No abstract text available
    Text: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for


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    PDF 023SbQS Q004312 60203-Y66 BCY66 QQ0M31Ö

    TRANSISTOR BFW 11

    Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83
    Text: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use


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    PDF 053SbOS Q62702-F365 a23SbQS 00DM73b TRANSISTOR BFW 11 bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83

    3055 transistor

    Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
    Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for


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    PDF D004T11 Q62702-U58 B--01 fl23Sb05 A23SbDS B--03 3055 transistor 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055

    transistor BD 110

    Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
    Text: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal


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    PDF fl235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 110 0437 Q62902-B62 transistor BD 524

    2f5 transistor

    Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
    Text: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF


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    PDF a23SbOS 2f5 transistor Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75

    a02 Transistor rf

    Abstract: transistor bf 198
    Text: 25C 0 • a23StiG5 0DG444b a NPN Silicon RF Transistor - - SIEMENS AK TIEN 6E SE LL SC HA F “ ■SIE6r 25C. 0444Ó _ 0 _ r ~ BF198 3 / - z-f fo r gain-controlled T V IF am plifier sta g e s BF 198 is an NPN silicon planar radio-frequency transistor in TO 9 2 plastic package


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    PDF a23StiG5 0DG444b BF198 023Sfe QQQ4450 a02 Transistor rf transistor bf 198

    2sc 103 transistor

    Abstract: transistor BD 430
    Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in


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    PDF Q62702-D1069 -T-33-OS fl23SbQS BD429 2sc 103 transistor transistor BD 430

    BD429

    Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
    Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in


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    PDF fl23Sfc Q62702-D1069 BD429 fnb33 D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SC D B A23SbDS □ ÜQH'iÜfc» S « S I E G _ „ _ , , J ~ i ' r — t '- S NPN Silicon Planar Transistor 2 N 3019 _ SIEMENS A K T I E N G E S E L L S C H A F -2 N 3019 is an epitaxial NPN silicon planar transistor in TO 39 case 5 C 3 DIN 41873 .


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    PDF A23SbDS fl53SbOS

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    PDF

    Q62702-D1070

    Abstract: TRANSISTOR D 1785 BD430
    Text: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in


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    PDF T-33-/7 Q62702-D1070 fl23Sb05 Q0043b2 BD430 Q62702-D1070 TRANSISTOR D 1785 BD430

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA BFS 17W MCs 1= B Q62702-F1645 Package O Pin Configuration II CO Marking Ordering Code LU II C\J Type SOT-323 Maximum Ratings of any single Transistor


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    PDF Q62702-F1645 OT-323 D1521L5 fl235LD5 A235b05 01521b?

    ABE 422

    Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
    Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high


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    PDF pac54 23Sb05 BFR14B ABE 422 Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721

    AF239

    Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
    Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.


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    PDF A23Sb05 AF239 Q60106-X239 T1-0221) transistor h5c AF 239 0406H F239 Q60106-X239 WTV4 AAO-4A

    transistor bf 198

    Abstract: BF198 transistor bf 494 RF Transistor BF198 BF 494 C A495 A-04 Q62702-F354 A0349-3
    Text: esc o • asBSbüs üdgmmmid a NPN Silicon RF Transistor SIEM EN S IS IE 6 _ 25C. 0 4 4 4 Ó - - A K T IEN 6ESELLSC H A F - _ _ BF198 T ~ 3 1~ i f for gain-controlled TV IF amplifier stages BF 198 is an NPN silicon planar radio-frequency transistor in TO 92 plastic package


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    PDF 23SLDS 0DQ444fc BF198 Q62702-F354 qqq4450 transistor bf 198 BF198 transistor bf 494 RF Transistor BF198 BF 494 C A495 A-04 Q62702-F354 A0349-3

    BU 103 t transistor

    Abstract: DIN 41872 BU 103 A transistor 2U25
    Text: 55C D fl535b05 0004ÔSM 1 « S I E G , • T-33-29 NPN Silicon Darlington Power Transistor BU X 28 Not for new design - SIEMENS AKTIEN6ESELLSCHAF -BU X 28 is a triple diffused monolithic NPN dariington power transistor in TO 3 case 3 A 2 DIN 41872 . The collector is electrically connected to the case. The resistor between


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    PDF fl535b05 T-33-29 a23SbOS 00Q4fl5b BUX28 H--01 BU 103 t transistor DIN 41872 BU 103 A transistor 2U25

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


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    PDF 003221b X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173)

    BFW93

    Abstract: transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60
    Text: I ESC D • 053SbOS 0 0 0 4 7 3 4 2 ■ S I E û NPN Silicon RF Broadband Transistor design SIEMENS A K T I E N ô E S E L L S C H A F D Not for new CAI BFW 93 -3 1 -1 5 BFW 9 3 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance,


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    PDF 053SbOS f-31-IS Q62702-F365 Q00M73b BFW93 BFW93 transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60

    Untitled

    Abstract: No abstract text available
    Text: 32E V m A23b320 PNP Silicon High-Voltage Transistor Q O lb ö S S 3 « S IP BFN 21 SIEMENS/ SPCLi SEMICONDS T- 21-0,3 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage


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    PDF A23b320 Q62702-F585 Q62702-F1059 23b320 102mA