IC 4556
Abstract: 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939
Text: 2SC D • a23SbOS OQOMSSb 4 WÊSIZ6 . PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 939 4556 D - BF 93 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VH F input stages in TV tuners.
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a23SbOS
62702-F
G--14
IC 4556
4556D
transistor Siemens 14 S S 92
GPB16
4556 d
transistor BF 939
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TRANSISTOR G13
Abstract: c 939 transistor bf 4556 d BF939
Text: 2SC D • a23SbOS OQOMSSb 4 W Ê S I Z 6 . PNP Silicon Planar Transistor SIEMENS AK TI EN GES EL LSC HAF BF 939 45 56 D - BF 9 3 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.
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Q62702-F
fl235b05
0Q04557
TRANSISTOR G13
c 939
transistor bf
4556 d
BF939
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transistor BD 800
Abstract: transistor BD 110
Text: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal
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A235bQ5
Q62702-D905
Q62902-B63
Q62902-B62
transistor BD 800
transistor BD 110
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K1 transistor
Abstract: pnp vhf transistor
Text: 25C D • 523SbQS QDQMS3‘i 4 WiSIZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 236 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,
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523SbQS
BF767
Q62702-F553
K1 transistor
pnp vhf transistor
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Transistor C G 774 6-1
Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Text: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods
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A23StiGS
dG04hlt.
Q62702-F527
235b05
000Mb22
BFQ28
Transistor C G 774 6-1
C G 774 6-1
a/Transistor C G 774 6-1
RLF100-11/12/Transistor C G 774 6-1
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Untitled
Abstract: No abstract text available
Text: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for
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023SbQS
Q004312
60203-Y66
BCY66
QQ0M31Ö
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TRANSISTOR BFW 11
Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83
Text: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use
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053SbOS
Q62702-F365
a23SbQS
00DM73b
TRANSISTOR BFW 11
bfw 10 transistor
GPA 76
transistor 2sc 546
transistor bfw 83
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3055 transistor
Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for
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D004T11
Q62702-U58
B--01
fl23Sb05
A23SbDS
B--03
3055 transistor
2N3055
M 3055 power transistor
transistor 3055
e 3055 t
3055 npn
power transistor 3055
on 3055
j 3055
power transistor IN 3055
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transistor BD 110
Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
Text: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal
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fl235bQ5
Q62702-D905
Q62902-B63
Q62902-B62
transistor BD 110
0437
Q62902-B62
transistor BD 524
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2f5 transistor
Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
Text: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF
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a23SbOS
2f5 transistor
Transistor BFT 99
TIC 122 Transistor
2SC 2090
Transistor BFT 44
U/25/20/TN26/15/850/BFT75
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a02 Transistor rf
Abstract: transistor bf 198
Text: 25C 0 • a23StiG5 0DG444b a NPN Silicon RF Transistor - - SIEMENS AK TIEN 6E SE LL SC HA F “ ■SIE6r 25C. 0444Ó _ 0 _ r ~ BF198 3 / - z-f fo r gain-controlled T V IF am plifier sta g e s BF 198 is an NPN silicon planar radio-frequency transistor in TO 9 2 plastic package
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a23StiG5
0DG444b
BF198
023Sfe
QQQ4450
a02 Transistor rf
transistor bf 198
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2sc 103 transistor
Abstract: transistor BD 430
Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in
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Q62702-D1069
-T-33-OS
fl23SbQS
BD429
2sc 103 transistor
transistor BD 430
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BD429
Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in
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fl23Sfc
Q62702-D1069
BD429
fnb33
D1069
Q62702-D1069
fcdc
2SC 102
bD 106 transistor
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Untitled
Abstract: No abstract text available
Text: 2SC D B A23SbDS □ ÜQH'iÜfc» S « S I E G _ „ _ , , J ~ i ' r — t '- S NPN Silicon Planar Transistor 2 N 3019 _ SIEMENS A K T I E N G E S E L L S C H A F -2 N 3019 is an epitaxial NPN silicon planar transistor in TO 39 case 5 C 3 DIN 41873 .
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A23SbDS
fl53SbOS
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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Q62702-D1070
Abstract: TRANSISTOR D 1785 BD430
Text: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in
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T-33-/7
Q62702-D1070
fl23Sb05
Q0043b2
BD430
Q62702-D1070
TRANSISTOR D 1785
BD430
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA BFS 17W MCs 1= B Q62702-F1645 Package O Pin Configuration II CO Marking Ordering Code LU II C\J Type SOT-323 Maximum Ratings of any single Transistor
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Q62702-F1645
OT-323
D1521L5
fl235LD5
A235b05
01521b?
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ABE 422
Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high
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pac54
23Sb05
BFR14B
ABE 422
Transistor BFR 37
ABE 027
bfr14
BFR 98
ABE 604
Transistor BFr 99
ABE 721
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AF239
Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.
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A23Sb05
AF239
Q60106-X239
T1-0221)
transistor h5c
AF 239
0406H
F239
Q60106-X239
WTV4
AAO-4A
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transistor bf 198
Abstract: BF198 transistor bf 494 RF Transistor BF198 BF 494 C A495 A-04 Q62702-F354 A0349-3
Text: esc o • asBSbüs üdgmmmid a NPN Silicon RF Transistor SIEM EN S IS IE 6 _ 25C. 0 4 4 4 Ó - - A K T IEN 6ESELLSC H A F - _ _ BF198 T ~ 3 1~ i f for gain-controlled TV IF amplifier stages BF 198 is an NPN silicon planar radio-frequency transistor in TO 92 plastic package
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23SLDS
0DQ444fcÂ
BF198
Q62702-F354
qqq4450
transistor bf 198
BF198
transistor bf 494
RF Transistor BF198
BF 494 C
A495
A-04
Q62702-F354
A0349-3
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BU 103 t transistor
Abstract: DIN 41872 BU 103 A transistor 2U25
Text: 55C D fl535b05 0004ÔSM 1 « S I E G , • T-33-29 NPN Silicon Darlington Power Transistor BU X 28 Not for new design - SIEMENS AKTIEN6ESELLSCHAF -BU X 28 is a triple diffused monolithic NPN dariington power transistor in TO 3 case 3 A 2 DIN 41872 . The collector is electrically connected to the case. The resistor between
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fl535b05
T-33-29
a23SbOS
00Q4fl5b
BUX28
H--01
BU 103 t transistor
DIN 41872
BU 103 A transistor
2U25
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Untitled
Abstract: No abstract text available
Text: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied
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003221b
X3A-BFR520
BFR520
BFG520
OT143)
BFP520
OT173)
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BFW93
Abstract: transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60
Text: I ESC D • 053SbOS 0 0 0 4 7 3 4 2 ■ S I E û NPN Silicon RF Broadband Transistor design SIEMENS A K T I E N ô E S E L L S C H A F D Not for new CAI BFW 93 -3 1 -1 5 BFW 9 3 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance,
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053SbOS
f-31-IS
Q62702-F365
Q00M73b
BFW93
BFW93
transistor bfw 88
transistor 2sc 546
BFW 72
Q62702-F365
BFW 60
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Untitled
Abstract: No abstract text available
Text: 32E V m A23b320 PNP Silicon High-Voltage Transistor Q O lb ö S S 3 « S IP BFN 21 SIEMENS/ SPCLi SEMICONDS T- 21-0,3 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage
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A23b320
Q62702-F585
Q62702-F1059
23b320
102mA
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