TRANSISTOR A1160 Search Results

TRANSISTOR A1160 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR A1160 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor A1160 Abstract: d1708 A1160 D1708 a 2SC6146 TC-00001787 Text: 2SC6146 Ordering number : ENA1160A SANYO Semiconductors DATA SHEET 2SC6146 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process.	Original	2SC6146 ENA1160A A1160-4/4 transistor A1160 d1708 A1160 D1708 a 2SC6146 TC-00001787	PDF
transistor A1160 Abstract: A1160 2SC614 2SC6146 ENA1160 Text: 2SC6146 Ordering number : ENA1160 SANYO Semiconductors DATA SHEET 2SC6146 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process.	Original	2SC6146 ENA1160 A1160-4/4 transistor A1160 A1160 2SC614 2SC6146 ENA1160	PDF
c5088 transistor Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N	PDF
transistor A1160 Abstract: 2SA1160 A1160 Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)	Original	2SA1160 transistor A1160 2SA1160 A1160	PDF
transistor A1160 Abstract: 2SA1160 A1160 25j1A Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)	Original	2SA1160 transistor A1160 2SA1160 A1160 25j1A	PDF
2SA116 Abstract: No abstract text available Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)	Original	2SA1160 2SA116	PDF
2SA1160 Abstract: transistor A1160 A1160 Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)	Original	2SA1160 2SA1160 transistor A1160 A1160	PDF
Untitled Abstract: No abstract text available Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)	Original	2SA1160	PDF
transistor A1160 Abstract: No abstract text available Text: A1160 Chopper-Stabilized Precision Hall Effect Switch With Advanced Diagnostics Description Features and Benefits • Unipolar switchpoints • Externally enabled diagnostics feature • Diagnostics feature exercises the entire magnetic and electrical signal path within the IC	Original	A1160 OT23W A1160 transistor A1160	PDF
transistor A1160 Abstract: HOA1160 Text: HOA1160 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to +100°C • Low profile to facilitate stacking DESCRIPTION This compact reflective sensor consists of an infrared	OCR Scan	HOA1160 A1160-001, A1160-003) HOA1160 transistor A1160	PDF
transistor a2160 Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124	OCR Scan	N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K	PDF
KL SN 102 94v0 Abstract: ASTM d4066 ms3367 RBS 6601 Installation guide for RBS 6000 SHK 55-65 Scanbe ejector kit rbs 6501 cr40 steel 11633-1 SCANBE KL SN 102 94v Text: RI-55006 cat cover for pdf 8/5/02 9:48 AM Page 2 2002 NEW PRODUCTS DISTRIBUTOR LOCATIONS WORLDWIDE RICHCO USA Please call Customer Service 773 539-4060, Samples (800) 621-1892, or visit www.richcoinc.com for your nearest distributor location. EUROPE Alldistri Handelsges. m.b.H.	Original	RI-55006 3000-Rupea-Brasov SR-3230 OFS90 WIT-30AR PPR-10 KL SN 102 94v0 ASTM d4066 ms3367 RBS 6601 Installation guide for RBS 6000 SHK 55-65 Scanbe ejector kit rbs 6501 cr40 steel 11633-1 SCANBE KL SN 102 94v	PDF
220v AC voltage stabilizer schematic diagram Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122	Original	P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor	PDF
TCA965 equivalent Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401 Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated	OCR Scan	DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401	PDF

A1306 TRANSISTOR Abstract: A1273 A1266 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor Text: 80C186EC/80C188EC Microprocessor User’s Manual 80C186EC/80C188EC Microprocessor User’s Manual 1995 Order Number 272047-003 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including	Original	80C186EC/80C188EC 82C59A Index-10 A1306 TRANSISTOR A1273 A1266 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor	PDF
transistor A1011 Abstract: a1273 transistor scheme A1266 a1273 a1273 transistor DATA a1273 transistor a1232 transistor a1266 A1306 TRANSISTOR transistor A1267 Text: 80C186EC/80C188EC Microprocessor User’s Manual 80C186EC/80C188EC Microprocessor User’s Manual 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions	Original	80C186EC/80C188EC 82C59A Index-10 transistor A1011 a1273 transistor scheme A1266 a1273 a1273 transistor DATA a1273 transistor a1232 transistor a1266 A1306 TRANSISTOR transistor A1267	PDF