Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR A107 Search Results

    TRANSISTOR A107 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A107 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CPH6003A Ordering number : ENA1078 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6003A High-frequency Medium-power Amplifier Applications Features • • • • High gain fT=7GHz typ . High Current : (IC=150mA). Ultraminiature and thin 6pin package.


    Original
    PDF CPH6003A ENA1078 150mA) 800mW) 250mm2â A1078-5/5

    Untitled

    Abstract: No abstract text available
    Text: CPH6003A Ordering number : ENA1078A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6003A High-frequency Medium-power Amplifier Applications Features • • • • High gain fT=7GHz typ High Current (IC=150mA) Ultraminiature and thin 6pin package


    Original
    PDF CPH6003A ENA1078A 150mA) 800mW) A1078-7/7

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1078A CPH6003A RF Transistor http://onsemi.com 12V, 150mA, fT=7GHz, NPN Single CPH6 Features • • • • High gain fT=7GHz typ High Current (IC=150mA) Ultraminiature and thin 6pin package Large Collector Disspation (800mW) Specifications


    Original
    PDF ENA1078A CPH6003A 150mA, 150mA) 800mW) 250mm2 A1078-7/7

    Untitled

    Abstract: No abstract text available
    Text: CPH6001A Ordering number : ENA1079 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6001A High-Frequency Low-Noise Amplifier Applications Features • • • • High gain : ⏐S21e⏐2=11dB typ f=1GHz . High cutoff frequency : fT=6.7GHz typ.


    Original
    PDF CPH6001A ENA1079 800mW 250mm2â A1079-6/6

    MARKING 702 6pin ic

    Abstract: PF7700 A1078 7018a CPH6003A cph6003 235.8
    Text: CPH6003A Ordering number : ENA1078 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6003A High-frequency Medium-power Amplifier Applications Features • • • • High gain fT=7GHz typ . High Current : (IC=150mA). Ultraminiature and thin 6pin package.


    Original
    PDF CPH6003A ENA1078 150mA) 800mW) 250mm20 A1078-5/5 MARKING 702 6pin ic PF7700 A1078 7018a CPH6003A cph6003 235.8

    Untitled

    Abstract: No abstract text available
    Text: CPH6001A Ordering number : ENA1079 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6001A High-Frequency Low-Noise Amplifier Applications Features • • • • High gain : ⏐S21e⏐2=11dB typ f=1GHz . High cutoff frequency : fT=6.7GHz typ.


    Original
    PDF CPH6001A ENA1079 S21e2 800mW 250mm20 A1079-6/6

    IC 431

    Abstract: 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22
    Text: 2SC5277A Ordering number : ENA1075 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).


    Original
    PDF 2SC5277A ENA1075 S21e2 A1075-6/6 IC 431 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22

    Untitled

    Abstract: No abstract text available
    Text: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)


    Original
    PDF 2SC5277A ENA1075A A1075-8/8

    Untitled

    Abstract: No abstract text available
    Text: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)


    Original
    PDF 2SC5277A ENA1075A A1075-8/8

    Untitled

    Abstract: No abstract text available
    Text: CPH6001A Ordering number : ENA1079A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6001A High-Frequency Low-Noise Amplifier Applications Features • • • • High gain : |S21e|2=11dB typ f=1GHz High cut-off frequency : fT=6.7GHz typ


    Original
    PDF CPH6001A ENA1079A 800mW A1079-8/8

    Untitled

    Abstract: No abstract text available
    Text: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain


    Original
    PDF ENA1074 2SC5245A S21e2 A1074-6/6

    A1074

    Abstract: IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990
    Text: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain


    Original
    PDF 2SC5245A ENA1074 S21e2 A1074-6/6 A1074 IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990

    Untitled

    Abstract: No abstract text available
    Text: 2SC5245A Ordering number : ENA1074A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) High gain


    Original
    PDF 2SC5245A ENA1074A A1074-8/8

    Untitled

    Abstract: No abstract text available
    Text: 2SC4853A Ordering number : ENA1076A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz)


    Original
    PDF 2SC4853A ENA1076A A1076-8/8

    2SC5231A

    Abstract: A1077 ITR07963 ITR07964 ITR07965 ITR07966 ITR07968 marking c7
    Text: 2SC5231A Ordering number : ENA1077 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5231A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original
    PDF 2SC5231A ENA1077 S21e2 A1077-6/6 2SC5231A A1077 ITR07963 ITR07964 ITR07965 ITR07966 ITR07968 marking c7

    2SC5231A

    Abstract: No abstract text available
    Text: 2SC5231A Ordering number : ENA1077A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5231A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz)


    Original
    PDF 2SC5231A ENA1077A A1077-8/8 2SC5231A

    a1077

    Abstract: 2SC5231A
    Text: 2SC5231A Ordering number : ENA1077 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5231A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original
    PDF ENA1077 2SC5231A S21e2 A1077-6/6 a1077 2SC5231A

    A1076

    Abstract: ITR07582 ITR07583 ITR07585
    Text: 2SC4853A Ordering number : ENA1076 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA :⏐S21e⏐2=7dB typ (f=1GHz).


    Original
    PDF 2SC4853A ENA1076 S21e2 A1076-5/5 A1076 ITR07582 ITR07583 ITR07585

    marking 624 sc-70

    Abstract: transistor 3213
    Text: 2SC5245A Ordering number : ENA1074A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) High gain


    Original
    PDF ENA1074A 2SC5245A S21e2 A1074-8/8 marking 624 sc-70 transistor 3213

    A1070

    Abstract: IT0-22
    Text: EC4H07CA Ordering number : ENA1070 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC4H07CA UHF to S Band Low-Noise Amplifier and OSC Applications Features • • • • • • Low noise : NF=1.5dB typ f=2GHz . High cutoff frequency : fT=10GHz typ (VCE=1V).


    Original
    PDF EC4H07CA ENA1070 10GHz S21e2 UL94HB) A1070-7/7 A1070 IT0-22

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1074A 2SC5245A RF Transistor http://onsemi.com 10V, 30mA, fT=8GHz, NPN Single MCP Features • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ


    Original
    PDF ENA1074A 2SC5245A S21e2 A1074-8/8

    7018a

    Abstract: No abstract text available
    Text: Ordering number : ENA1079A CPH6001A RF Transistor http://onsemi.com 12V, 100mA, fT=6.7GHz, NPN Single CPH6 Features • • • • High gain : |S21e|2=11dB typ f=1GHz High cut-off frequency : fT=6.7GHz typ Small and slim 6-pin package Large allowable collector dissipation (800mW max)


    Original
    PDF ENA1079A CPH6001A 100mA, 800mW 250mm2 A1079-8/8 7018a

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan
    PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan
    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643