la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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pnp transistor a1020
Abstract: A1020 transistor A1020 transistor A1020 C2328 a1020 pnp TRANSISTOR C2328 a1020 pnp transistor c2328 transistor a1020 datasheet
Text: A1020 A1020 Silicon PNP Epitaxial Transistor Description: The A1020 is designed for use in power amplifier applications and power switching applications Features: ●Low collector saturation voltage ●Complementary to C2328 Chip Appearance Chip Size 760umx760um
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A1020
A1020
C2328
760um
760um
170um
260um
-10mA
pnp transistor a1020
A1020 transistor
transistor A1020
C2328
a1020 pnp
TRANSISTOR C2328
a1020 pnp transistor
c2328 transistor
a1020 datasheet
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c2328
Abstract: TRANSISTOR C2328 c2328 transistor a1020 transistor A1020 transistor a1020 a1020 NPN Transistor a1020 datasheet C2328 DATASHEET
Text: C2328 C2328 Silicon NPN Epitaxial Transistor Description: The C2328 is designed for use in power amplifier applications and power switching applications Features: ●Low collector saturation voltage ●Complementary to A1020 Chip Appearance Chip Size 760umx760um
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C2328
C2328
A1020
760um
760um
170um
260um
TRANSISTOR C2328
c2328 transistor
a1020 transistor
A1020
transistor a1020
a1020 NPN Transistor
a1020 datasheet
C2328 DATASHEET
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SMA1021
Abstract: A1021 CA1021 transistor A1021
Text: A1021 / SMA1021 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features Product Image Description The A1021 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design
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A1021
SMA1021
MIL-STD-883
A1021
CA1021
SMA1021
CA1021
transistor A1021
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Untitled
Abstract: No abstract text available
Text: Cascadable Amplifier 10 to 1000 MHz A1021/ SMA1021 V3 Features Product Image Description The A1021 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design
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A1021/
SMA1021
A1021
MIL-STD-883
SMA1021
CA1021
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Untitled
Abstract: No abstract text available
Text: A1021 / SMA1021 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features Product Image Description The A1021 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design
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A1021
SMA1021
MIL-STD-883
A1021
CA1021
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pnp transistor a1020
Abstract: A1020 transistor A1020 Y transistor a1020 a1020 pnp transistor A1020 Y pnp 2SA1020 toshiba marking code transistor 2sc2655 A1020 2SC2655
Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 s (typ.)
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2SA1020
2SC2655
O-92MOD
pnp transistor a1020
A1020 transistor
A1020 Y
transistor a1020
a1020 pnp transistor
A1020 Y pnp
2SA1020
toshiba marking code transistor 2sc2655
A1020
2SC2655
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pnp transistor a1020
Abstract: A1020 transistor transistor a1020 a1020 pnp transistor A1020 Y pnp A1020 Y transistor BR A1020 A1020 PNP toshiba marking code transistor 2sc2655 A1020 Y transistor
Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)
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2SA1020
2SC2655
O-92MOD
pnp transistor a1020
A1020 transistor
transistor a1020
a1020 pnp transistor
A1020 Y pnp
A1020 Y
transistor BR A1020
A1020 PNP
toshiba marking code transistor 2sc2655
A1020 Y transistor
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pnp transistor a1020
Abstract: A1020 transistor transistor a1020 toshiba marking code transistor 2sc2655 A1020 Y pnp A1020 Y A1020 PNP a1020 pnp transistor 2SA1020 toshiba
Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)
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2SA1020
2SC2655
O-92MOD
pnp transistor a1020
A1020 transistor
transistor a1020
toshiba marking code transistor 2sc2655
A1020 Y pnp
A1020 Y
A1020 PNP
a1020 pnp transistor
2SA1020 toshiba
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pnp transistor a1020
Abstract: A1020 transistor 2SA1020 A1020 Y pnp toshiba marking code transistor 2sc2655 transistor a1020 a1020 pnp 2SC2655 A1020 a1020 pnp transistor
Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW
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2SA1020
2SC2655
150lled
pnp transistor a1020
A1020 transistor
2SA1020
A1020 Y pnp
toshiba marking code transistor 2sc2655
transistor a1020
a1020 pnp
2SC2655
A1020
a1020 pnp transistor
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vn10K
Abstract: VN10KN
Text: VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN10K
DSFP-VN10K
A102108
VN10KN
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DSFP-VN0104
Abstract: No abstract text available
Text: VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0104
VN0104
DSFP-VN0104
A102907
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Untitled
Abstract: No abstract text available
Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN1206
DSFP-VN1206
A102108
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VN0106
Abstract: No abstract text available
Text: VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0106
VN0106
DSFP-VN0106
A102907
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Untitled
Abstract: No abstract text available
Text: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN2410
VN2410
DSFP-VN2410
A102907
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VN2406L-G
Abstract: No abstract text available
Text: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN2406
VN2406
DSFP-VN2406
A102907
VN2406L-G
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Untitled
Abstract: No abstract text available
Text: VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN4012
DSPD-3TO92N3,
D080408.
DSFP-VN4012
A102108
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VN2450N8-G
Abstract: vn4ew
Text: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
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VN2450
DSFP-VN2450
A102108
VN2450N8-G
vn4ew
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PDF
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Untitled
Abstract: No abstract text available
Text: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0808
VN0808
DSFP-VN0808
A102907
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MARKING VN
Abstract: vn0606
Text: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0606
VN0606
DSFP-VN0606
A102907
MARKING VN
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Untitled
Abstract: No abstract text available
Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN3515
DSFP-VN3515
A102108
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Untitled
Abstract: No abstract text available
Text: TN1504 N-Channel Enhancement-Mode Vertical DMOS FETs Features ► ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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TN1504
DSFP-TN1504
A102907
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mos fet marking k1
Abstract: No abstract text available
Text: TP5335 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex TP5335 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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TP5335
TP5335
O-236AB
OT-23)
O-236,
DSFP-TP5335
A102607
mos fet marking k1
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