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    Microchip Technology Inc

    Microchip Technology Inc VN1206L-G

    MOSFET N-CH 120V 230MA TO92-3
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    Microchip Technology Inc VN1206L-G-P002

    MOSFET N-CH 120V 230MA TO92-3
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    Microchip Technology Inc VN1206

    SUPERTEX VN1206 UNINSPECTED BARE DIE
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    ES Components VN1206 734
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    Microchip Technology Inc VN1206N

    SUPERTEX VN1206N UNINSPECTED WAFER
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    VN1206 Datasheets (45)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    VN1206 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VN1206B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN1206B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN1206B Unknown FET Data Book Scan PDF
    VN1206B Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN1206B Supertex N-Channel Enhancement-Mode Vertical DMOS Power FETs Scan PDF
    VN1206D Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN1206D Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN1206D Unknown FET Data Book Scan PDF
    VN1206D Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN1206D Supertex N-Channel Enhancement-Mode Vertical DMOS Power FETs Scan PDF
    VN1206L Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VN1206L Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VN1206L Vishay N-Channel Enhancement-Mode MOSFET Transistor Original PDF
    VN1206L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN1206L Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN1206L Unknown FET Data Book Scan PDF
    VN1206L Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN1206L Temic Semiconductors N-Channel Enhancement Mode MOSFET Transistors Scan PDF
    VN1206L Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    VN1206 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSs I R BVdgs 120V q S ON Order Number / Package '« O N ) (max) (min) TO-92 6.0Q 1.0A VN1206L Features Advanced DMOS Technology □ Free from secondary breakdown □


    OCR Scan     		VN1206 VN1206L PDF

    Untitled

    Abstract: No abstract text available
    Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V (B R )D S S Min (V) 120 TD S (on) M a x ( Q ) VoS(th) (V) Id (A) 6 a vGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS • Low On-Resistance: 3.8 Q • Low Threshold: 1.4 V • Low Input Capacitance: 35 pF


    OCR Scan     		VN1206L 1206L S-04279-- 16-Jul-01 O-226AA) PDF

    Untitled

    Abstract: No abstract text available
    Text: □ï SUPERTEX INC 1 7 07732^5 DOOlbSÖ h V N 1206 V N 1210 r- -if-os’ N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information Order Number / Package b v dss/ R DS(ON) *D(ON) BVDgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L


    OCR Scan     		VN1206B VN1210B VN1206L VN1210L O-220 VN1206D VN1210D well1210 VN1210 VN1206 PDF

    VN1206M

    Abstract: No abstract text available
    Text: VN 1206 SERI ES N-Channel Enhancement-Mode MOS Transistors B'SSSSSS PRODUCT SUMMARY PART NUMBER V BRJDSS VN1206L VN1206M r DS(ON •d (A) (A) PACKAGE 120 6 0.23 TO-92 120 6 0.26 TO-237 3 DRAIN TO-237 BOTTOM VIEW Performance Curves: VNDQ12 Jet* 1 SOURCE 2 GATE


    OCR Scan     		VN1206L VN1206M O-237 VNDQ12 VN1206M PDF

    Untitled

    Abstract: No abstract text available
    Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities


    Original     		VN1206 DSFP-VN1206 A041309 PDF

    VNDQ1

    Abstract: 1206L VN1206L
    Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


    Original     		VN1206L O-226AA 18-Jul-08 VNDQ1 1206L VN1206L PDF

    VN1210M

    Abstract: VN1206M VN1206L
    Text: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M


    Original     		VN1206L/M, VN1210M VN1206L VN1206M O-226AA) P-38211--Rev. 15-Aug-94 VN1210M VN1206M VN1206L PDF

    VN1206L

    Abstract: VN1210M VN1206M
    Text: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M


    Original     		VN1206L/M, VN1210M VN1206L VN1206M O-226AA) P-38211--Rev. 15-Aug-94 VN1206L VN1210M VN1206M PDF

    Untitled

    Abstract: No abstract text available
    Text: VN1206D Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)120 V(BR)GSS (V)30 I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)45 Minimum Operating Temp (øC)-55


    Original     		VN1206D PDF

    VN1206

    Abstract: No abstract text available
    Text: VN1206 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN1206 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original     		VN1206 VN1206 A020309 PDF

    VN1206

    Abstract: vn1210
    Text: VN1206 VN1210 in c . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss / ^D S O N I d i ON) b v dgs (max) (min) TO-39 TO-92 TO-220 120V 6n 1.0A VN1206B VN1206L VN1206D 120 V io n


    OCR Scan     		VN1206 VN1210 VN1206B VN1206L VN1210L O-220 VN1206D VN1210 PDF

    vn1206

    Abstract: No abstract text available
    Text: S i I I m m m m tß iw itfu w i | r ZJ r Ï u . f VN1206 VN1210 Irir', » N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^ D S O N I d (ON) b v dgs (max) (min) TO-39 TO-92 TO-220 VN1206B VN1206L VN1206D


    OCR Scan     		VN1206 VN1210 VN1206B VN1206L VN1210L O-220 VN1206D VN1210 PDF

    1206L

    Abstract: VN1206L
    Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


    Original     		VN1206L O-226AA O-226AA) S-04279--Rev. 16-Jul-01 1206L VN1206L PDF

    VN1206

    Abstract: VN1206L
    Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 120V 6.0Ω 1.0A VN1206L TO-92 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		VN1206 VN1206L VN1206 VN1206L PDF

    Untitled

    Abstract: No abstract text available
    Text: VN1206N1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)60Í I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)


    Original     		VN1206N1 PDF

    sivn fet

    Abstract: sivn
    Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original     		VN1206 DSFP-VN1206 A020209 sivn fet sivn PDF

    Untitled

    Abstract: No abstract text available
    Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original     		VN1206 DSFP-VN1206 A102108 PDF

    VN1206L

    Abstract: VN1206M VN1210M
    Text: VN1206L/M, VN1210M Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN1206L VN1206M 1 120 VN1210M rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V


    Original     		VN1206L/M, VN1210M VN1206M VN1206L O226AA) P-38211--Rev. VN1206L VN1206M VN1210M PDF

    vn1210m

    Abstract: No abstract text available
    Text: am & SS VNDQ12 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-237 • VN1206M, VN1210M Single TO-92 TO-226AA • VN1206L, VN1210L, TN1206L Single Chip • Available as VNDQ4CHP DEVICE TYPICAL CHARACTERISTICS Output Characteristics for Low Gate Drive


    OCR Scan     		VNDQ12 O-237 VN1206M, VN1210M VN1206L, VN1210L, TN1206L O-226AA) VNDQ12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VN1206M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)120 V(BR)GSS (V)30 I(D) Max. (A).33 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)


    Original     		VN1206M PDF

    1206L

    Abstract: VN1206
    Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original     		VN1206 DSFP-VN1206 A041309 1206L VN1206 PDF

    Untitled

    Abstract: No abstract text available
    Text: VN1206B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)120 V(BR)GSS (V)30 I(D) Max. (A)700m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)6.3 Minimum Operating Temp (øC)-55


    Original     		VN1206B Junc-Case21 PDF

    Untitled

    Abstract: No abstract text available
    Text: T em ic smcons_ VN1206L/M, VN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt Num ber : VV BR DSS Min (V) VN1206L VN1206M 120 VN1210M Features Benefits • • • • • • • • • • Low On-Resistance: 3.8 Q


    OCR Scan     		VN1206L/M, VN1210M VN1206L VN1206M VN1210M P-38211--Rev. PDF

    Untitled

    Abstract: No abstract text available
    Text: V N 1206 V N 1210 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B Vdss I Order Number / Package ^DS O N *D(0N> BV dgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L VN1206D 120 V 1 0 ÌÌ


    OCR Scan     		VN1206B VN1206L VN1210L O-220 VN1206D temperatur06 VN1210 VN1210 PDF