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    Microchip Technology Inc VN0606L-G

    MOSFET N-CH 60V 330MA TO92-3
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    Rochester Electronics LLC VN0606M

    MOSFET N-CH
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    Microchip Technology Inc VN0606L-G-P003

    MOSFET N-CH 60V 330MA TO92-3
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    Microchip Technology Inc VN0606L

    Transistor MOSFET N-CH 60V 0.33A 3-Pin TO-92
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    Vishay Siliconix VN0606L

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    Quest Components VN0606L 169
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    VN0606 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VN0606 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VN0606L Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VN0606L Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VN0606L Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VN0606L Vishay Telefunken N-Channel 60-V (D-S) MOSFETs Original PDF
    VN0606L-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 330MA TO92-3 Original PDF
    VN0606L-G-P003 Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 330MA TO92-3 Original PDF
    VN0606M Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VN0606M Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN0606M Unknown FET Data Book Scan PDF
    VN0606M Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN0606M Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN0606M Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    VN0606 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A12150

    Abstract: No abstract text available
    Text: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original     		VN0606 DSFP-VN0606 A121508 A12150 PDF

    VN0606

    Abstract: VN0606L
    Text: VN0606 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 3.0Ω 1.5A Order Number / Package TO-92 VN0606L Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		VN0606 VN0606L VN0606 VN0606L PDF

    VN0606L

    Abstract: VN66AFD TN0601L
    Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46


    Original     		TN0601L, VN0606L, VN66AFD VN0606L TN0601L O-226AA 08-Apr-05 VN0606L VN66AFD TN0601L PDF

    VN0606

    Abstract: No abstract text available
    Text: Supertex inc. VN0606 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0606 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original     		VN0606 VN0606 A031110 PDF

    Untitled

    Abstract: No abstract text available
    Text: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain


    Original     		VN0606 DSFP-VN0606 A042709 PDF

    VN66AFD

    Abstract: TN0601L VN0606L VN0606M
    Text: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2


    Original     		TN0601L, VN0606L/M, VN66AFD VN0606L TN0601L VN0606M O-226AA, O-237) S-52426--Rev. VN66AFD TN0601L VN0606L VN0606M PDF

    vn66afd

    Abstract: 0606L TN0601L VN0606L
    Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46


    Original     		TN0601L, VN0606L, VN66AFD VN0606L TN0601L O-226AA 18-Jul-08 vn66afd 0606L TN0601L VN0606L PDF

    VN0606L-G TO-92

    Abstract: No abstract text available
    Text: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original     		VN0606 DSFP-VN0606 A091508 VN0606L-G TO-92 PDF

    VN66AFD

    Abstract: VN66AF TN0601L VN0606L 0606l 7020.1
    Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46


    Original     		TN0601L, VN0606L, VN66AFD VN0606L TN0601L O-226AA O-226AA) S-04279--Rev. 16-Jul-01 VN66AFD VN66AF TN0601L VN0606L 0606l 7020.1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN0606 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,


    Original     		VN0606 DSFP-VN0606 B081913 PDF

    TO-237

    Abstract: VN0606L VN66AFD VN0606M TN0601L
    Text: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2


    Original     		TN0601L, VN0606L/M, VN66AFD VN0606L TN0601L VN0606M O-226AA, O-237) P-37992--Rev. TO-237 VN0606L VN66AFD VN0606M TN0601L PDF

    7020.1

    Abstract: No abstract text available
    Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V


    Original     		TN0601L, VN0606L, VN66AFD TN0601L VN0606L VN66AFD O-226AA) S-00591--Rev. 03-Apr-00 7020.1 PDF

    VN0606

    Abstract: No abstract text available
    Text: VN0606 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0606 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


    Original     		VN0606 VN0606 A050409 PDF

    VN66AFD

    Abstract: vn66a
    Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS<on) Max (&) VGS(th) (V) I d (A) 1.8 e v Gs = io v 0.5 to 2 0.47 0.8 to 2 0.33 0.8 to 2.5 1.46 TN0601L VN0606L 3e 60 VN66AFD v as = io v


    OCR Scan     		TN0601L, VN0606L, VN66AFD TN0601L VN0606L VN66AFD S-04279-- 16-Jul-01 vn66a PDF

    gs 1117 ax

    Abstract: VN66 TN0610L VN0606M
    Text: Tem ic snlconlx_ TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (Q) V c S (th ) (V ) I d (A) TN0601L 1.8 @ V os = 10 V 0.5 to 2 0.47 VN0606L 3 @ V gs = 10 V 0.8 to 2 0.33


    OCR Scan     		TN0601L, VN0606L/M, VN66AFD TN0601L VN0606L VN0606M VN66AFD O-237 P-37992--Rev. gs 1117 ax VN66 TN0610L PDF

    52426

    Abstract: No abstract text available
    Text: MIC TN0601L, VN0606L/M, VN66AFD Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number ' BR DSS Min (V) rus(on) Max (Q) VGS(th) (V) I d (A) TN0601L 1.8 @ VGS= 10 V 0.5 to 2 0.47 VN0606L 3 @ VGs - 10 V 0.8 to 2 0.33 VN0606M


    OCR Scan     		TN0601L, VN0606L/M, VN66AFD TN0601L VN0606L VN0606M VN66AFD O-237 O-226AA, O-237) 52426 PDF

    VN0606M

    Abstract: No abstract text available
    Text: VN0606M B S ilic o n ix 60VMOSPOWER N-Channel Enhancement Mode This power FET is designed especially for low power high frequency inverters, interface to CMOS and TTL logic, and line drivers. Product Summary FEATURES • ■ ■ ■ ■ High Input Impedance


    OCR Scan     		VN0606M vn0606m bsr66 to-237 80/jS 300jjs, 350i\Q O-237 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN0606 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs RdS ON (max) Id(ON) (min) 60V 3 .0 ÌÌ 1.5A Order Number / Package TO-92 VN0606L Features Advanced DMOS Technology □ Free from secondary breakdown


    OCR Scan     		VN0606 VN0606L 300ns 10jxA PDF

    VN46AFD

    Abstract: 6178 vn0606m
    Text: VNDQ06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-39 TO-205AD • 2N6659, 2N6660 Single TO-220SD • VN46AFD, AN66AFD Single TO-237 • VN0606M Single TO-92 (TO-226AA) • TN0601L Quad 14-Pin Plastic • VQ1004J, TQ1004J Quad 14-Pin Dual-ln-Line


    OCR Scan     		VNDQ06 O-205AD) O-220SD O-237 O-226AA) 14-Pin 2N6659, 2N6660 VN46AFD, VN46AFD 6178 vn0606m PDF

    N-Channel Enhancement-Mode Vertical DMOS FETs

    Abstract: No abstract text available
    Text: Supertex inc. VN0606 N-Channel Enhancement-Mode Vertical DMOS FETs / BVd0S BVqss R dS ON (max) 60V 3 .o n If Ordering Information Order Number / Package TO-92 VN0606L 1.5A Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement


    OCR Scan     		VN0606 VN0606L 300ns N-Channel Enhancement-Mode Vertical DMOS FETs PDF

    Untitled

    Abstract: No abstract text available
    Text: VN0606 VN0610 fàkSupertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs BVdss/ If Ordering Information Order Number / Package b v tcs RdS ON (max) 60V 3n 1.5A VN0606L 60V 5£2 0.75A VN0610LL TO-92 Features Advanced DMOS Technology C These enhancement-mode (normally-off) transistors utilize a


    OCR Scan     		VN0606 VN0610 VN0606L VN0610LL 10jiA PDF

    vn0606

    Abstract: No abstract text available
    Text: Ofì Supertex ï l~ IC m VN0606 VN0610 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV / R d S ON bq s (max) Order Number / Package if B Vdss TO-92 60V 3£i 1.5A VN0606L 60V 5Î2 0.75A VN0610LL Features Advanced DMOS Technology L i Free from secondary breakdown


    OCR Scan     		VN0606 VN0610 VN0606L VN0610LL VN0610 VN0606 PDF

    N0610

    Abstract: No abstract text available
    Text: V N 0606 V N 0610 LJàSupertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B VDSS/ R d s <o n *D O N ) b v dgs (max) (min) 60V 3£i 60V Order Number / Package TO-92 1.5A VN0606L 0.75A VN0610LL Features Advanced DMOS Technology


    OCR Scan     		VN0606L VN0610LL VN0610 VN0606 300ms N0610 PDF

    Untitled

    Abstract: No abstract text available
    Text: Sii ir u r r ^ f mmmmtß iwitfnwi | VN0606 VN0610 / / j r» N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information bv dss/ Order Number / Package ^D S O N ^D(ON) b v dgs (max) (min) TO-92 60V 3Q 1.5A V N 0 60 6L 60V 5Q 0.75A VN 0610LL Features


    OCR Scan     		VN0606 VN0610 0610LL PDF