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    TRANSISTOR A 1980 Search Results

    TRANSISTOR A 1980 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 1980 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPB2060

    Abstract: No abstract text available
    Text: UPB2060 60W PEP, 1.8-2.0 GHz, 26V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB2060 is a high-power COMMON EMITTER bipolar transistor capable of providing 60 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed


    Original     		PDF UPB2060 UPB2060 400mA 491w6

    UPB1835

    Abstract: TM35W
    Text: UPB1835 35W PEP, 1.8-2.0 GHz, 25V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB1835 is a high-power COMMON EMITTER bipolar transistor capable of providing 35 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed for


    Original     		PDF UPB1835 UPB1835 TM35W

    1920A20

    Abstract: No abstract text available
    Text: R.B.063099 1920A20 20 Watts, 25 Volts, Class A 10 dB Gain Personal 1930 – 1990 MHz GENERAL DESCRIPTION The 1920A20 is a COMMON EMITTER transistor capable of providing 20 watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS


    Original     		PDF 1920A20 1920A20 1990MHz

    Diode and Transistor 1980

    Abstract: TRANSISTOR a 1980 BUK451-100A BUK451-100B
    Text: Philips Semiconductors Preliminary Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		PDF O220AB BUK451-100A/B BUK451 -100A -100B Diode and Transistor 1980 TRANSISTOR a 1980 BUK451-100A BUK451-100B

    jfet transistor

    Abstract: lovoltech PWRLITE-LS201N J-FET TRANSISTOR jfet power transistor LS201N 5A JFET lovoltech no diode
    Text: www.Lovoltech.com PWRLITE-LS201N N-Channel Power JFET Transistor for Notebook Battery Applications Features Applications Description The JFET transistor from Lovoltech is an ideal switch for battery operated products. The device presents a Low Rdson allowing for


    Original     		PDF PWRLITE-LS201N jfet transistor lovoltech PWRLITE-LS201N J-FET TRANSISTOR jfet power transistor LS201N 5A JFET lovoltech no diode

    jfet transistor

    Abstract: lovoltech LD1006N LVTD1006N lovoltech no diode
    Text: www.Lovoltech.com PWRLITE LD1006N High Performance N-Ch Vertical Power JFET Transistor Features Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device that


    Original     		PDF LD1006N jfet transistor lovoltech LD1006N LVTD1006N lovoltech no diode

    Untitled

    Abstract: No abstract text available
    Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19125E Hz--1990 AGR19125EU AGR19125EF

    lovoltech

    Abstract: LD1006S LVTD1006S LVTD1006SB marking symbol ER transistor
    Text: www.Lovoltech.com PWRLITE LD1006S High Performance N-Ch Vertical Power JFET Transistor with Schottky Features Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device that


    Original     		PDF LD1006S lovoltech LD1006S LVTD1006S LVTD1006SB marking symbol ER transistor

    100B100JW500X

    Abstract: AGR19125E AGR19125EF AGR19125EU JESD22-C101A 1961-25
    Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19125E Hz--1990 AGR19125E AGR19125EU AGR19125EF IS-95 IS-95) 100B100JW500X AGR19125EF AGR19125EU JESD22-C101A 1961-25

    Lovoltech

    Abstract: LD103SG6
    Text: www.Lovoltech.com PWRLITE LD103SG6 High Performance N-Ch Vertical Power JFET Transistor with Schottky Features Description Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device that


    Original     		PDF LD103SG6 Lovoltech LD103SG6

    lovoltech

    Abstract: jfet transistor LVTB103N LVTS103 Diode and Transistor 1980
    Text: www.Lovoltech.com PWRLITE LVTB103N High Performance N-Ch Vertical Power JFET Transistor “No Diode” Features Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules Description The Power JFET transistor from Lovoltech is a device that


    Original     		PDF LVTB103N lovoltech jfet transistor LVTB103N LVTS103 Diode and Transistor 1980

    LD1010D

    Abstract: Lovoltech LD1010D equivalent vertical LD1010D LD103SG6 IR 2E02 ld1010d.rev
    Text: www.Lovoltech.com PWRLITE LD1010D High Performance N-Ch Vertical Power JFET Transistor with Schottky Features Description Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device that


    Original     		PDF LD1010D LD1010D Lovoltech LD1010D equivalent vertical LD1010D LD103SG6 IR 2E02 ld1010d.rev

    equivalent transistor PT 3500

    Abstract: 100B100JW500X AGR19125E AGR19125EF AGR19125EU JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19125E Hz--1990 AGR19125E AGR19125EU AGR19125EF IS-95 DS04-161RFPP DS04-035RFPP) equivalent transistor PT 3500 100B100JW500X AGR19125EF AGR19125EU JESD22-C101A

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE ObE D bbS3T31 0DlS7Qfl =1 J BF550 V r - 3/-/5- SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.


    OCR Scan     		PDF bbS3T31 BF550 bb53T31 DQ1S71Q T-31-15

    k 351 transistor

    Abstract: MARKING G3 Transistor BF536 36I marking marking G3 sot-23 marking code 352 S2 MARKING TRANSISTOR
    Text: N AMER PH ILIPS/DISCRETE ObE D bbS3T31 0Q1S70M 1 X BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. A lso suitable as r.f. amplifier and oscillator in f.m. tuners.


    OCR Scan     		PDF bbS3T31 0Q1S70M BF536 00157Gb T-31-15 k 351 transistor MARKING G3 Transistor BF536 36I marking marking G3 sot-23 marking code 352 S2 MARKING TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK451-100A/B -100B T0220AB BUK451-1OOA/B

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK451-100A/B -100B T0220AB

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE OhE D bbS3T31 Q01S7SD T T'3i’ i r SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature envelope primarily intended for u.h.f. applications in thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A ~ v CBO max.


    OCR Scan     		PDF bbS3T31 Q01S7SD bb53131 QQIL57S5 BF579 T-31-15

    Untitled

    Abstract: No abstract text available
    Text: II SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a microminiature plastic envelope, intended for applications in thick and thin-film circuits such as self-oscillating mixer in u.h.f. tuners in conjunction with bipolar transistors or with M O S fets.


    OCR Scan     		PDF BF569 T-31-15

    qm300dy-h

    Abstract: qm50dy-h QM150DY-H QM1Q 150DY qm200dy-hk 150DY-HBK QM15 QM30d QM30c
    Text: Transistor modules Double arm ,center tap V cêx h *8 I j-r Type No. Pe Transistor section Ve *¥ e (sus) (V) (A) (A) (Wl p (A) 600 30 1.8 250 150 30 QMSOCY-H 600 50 3 310 150 QM75CY-H 600 75 4.5 350 150 QMtOOCY-H 600 100 6 620 150 100 QM150CY-H 600 150


    OCR Scan     		PDF QM75CY-H QM150CY-H QM30CY-H qm300dy-h qm50dy-h QM150DY-H QM1Q 150DY qm200dy-hk 150DY-HBK QM15 QM30d QM30c

    ks621k30

    Abstract: No abstract text available
    Text: KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1600 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts O U T L I N E D R A W IN G Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621K30 Amperes/1000 KSS21K30 ks621k30

    300 volt 16 ampere transistor

    Abstract: powerex ks62
    Text: POldEREX INC =JñD D • 7ET4hai 00G2E03 m N ER EX ^ 1 KS621A40 Powerex, Inc., Mills Street, Youngwood, Pennsylvania 15697 412 925-7272 f Tentative Fast Switching Single Darlington Transistor Module 400 Amperes/125 Volts Description t<jTUNtC*A*U6 Powerex Fast Switching Single Transistor


    OCR Scan     		PDF 00G2E03 KS621A40 Amperes/125 KS621A40 KS621M0 300 volt 16 ampere transistor powerex ks62

    Untitled

    Abstract: No abstract text available
    Text: I 1 , 1. t N AMER PHILIPS/DISCRETE QbE D bb53T31 0015704 1 • BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. Also suitable as r.f. amplifier and oscillator in f.m. tuners.


    OCR Scan     		PDF bb53T31 BF536 001570b T-31-15