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    TRANSISTOR A 1102 Search Results

    TRANSISTOR A 1102 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 1102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J2735

    Abstract: DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414
    Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W


    Original     		PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H J2735 DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414

    Untitled

    Abstract: No abstract text available
    Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 — 16 September 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W


    Original     		PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H

    BLF888B

    Abstract: smd transistor L33 Technical Specifications of DVB-T2 Transmitter
    Text: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 1 — 17 October 2011 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888B; BLF888BS BLF888B smd transistor L33 Technical Specifications of DVB-T2 Transmitter

    smd transistor l31

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A smd transistor l31

    smd transistor L33

    Abstract: transistor smd l33 SMD l33 Transistor
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A smd transistor L33 transistor smd l33 SMD l33 Transistor

    BLF888A

    Abstract: SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    TM1102

    Abstract: S1U MARKING TF 745-A SOT223 MARKING L5 l5 transistor PNP transistor PNP L5 PZTM1101 PZTM1102 lf marking transistor transistor marking LF
    Text: Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102 FEATURES DESCRIPTION • Low output capacitance Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101. • Fast switching time


    OCR Scan     		PDF PZTM1102 OT223 PZTM1101. 711QfiSb G1G3173 OT223. 7110fiEb TM1102 S1U MARKING TF 745-A SOT223 MARKING L5 l5 transistor PNP transistor PNP L5 PZTM1101 PZTM1102 lf marking transistor transistor marking LF

    transistor K 1096

    Abstract: BLY89C IEC134 BLY-89c 3 w RF POWER TRANSISTOR NPN
    Text: PHILIPS INTERNATIONAL bSE D • 711DÛ2L OObBS'H =134 ■ PHIN 11 BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 13,5 V . The transistor is resistance stabilized


    OCR Scan     		PDF 711002b BLY89C transistor K 1096 BLY89C IEC134 BLY-89c 3 w RF POWER TRANSISTOR NPN

    transistor rf cm 1104

    Abstract: BLY92A transistor 1971 3309 power transistor transistor VHF 1104 PHILIPS FW 36 20 431202036640 choke T3309 bly92 transistor c 1971
    Text: 11 PHILIPS INTERNATIONAL MAINTENANCE TYPE 711DÛ2b DQS7TÌ3 3 E IPHIN 41E D BLY92A T -3 3 -0 9 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage o f 28 V. The transistor Is resistance stabilized and


    OCR Scan     		PDF BLY92A T-33-Of transistor rf cm 1104 BLY92A transistor 1971 3309 power transistor transistor VHF 1104 PHILIPS FW 36 20 431202036640 choke T3309 bly92 transistor c 1971

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: P e BC857 SEMICONDUCTOR FORW ARD INTERNATIONAL ELECTRONICS LTD, PNP EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR Package: TO-92 ABSOLUTE MAXIMUM RATINGS a tT a iriM !5°C Symbol Rating Characteristic Unit Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF BC857 300uS -10mA -100mA 100MHz -200uA 200Hz

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMQS transistor Isolated version of PHP4N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


    OCR Scan     		PDF PHP4N40E PHX2N40E OT186A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP4N40E GENERAL DESCRIPTION PHX2N40E QUICK REFERENCE DATA N-channel enhancement mode SYMBOL field-effect power transistor in a full pack, plastic envelope featuring high


    OCR Scan     		PDF PHP4N40E PHX2N40E

    transistor rf cm 1104

    Abstract: BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor
    Text: 11 P H I L I P S INTERNATIONAL MAINTENANCE TYPE MIE » B 71 1 0 ê 2 t i QGSTTTB 3 ESPHIN Jl BLY92A T -3 3 -0 ? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


    OCR Scan     		PDF BLY92A T-33-Ã OT-48/2. transistor rf cm 1104 BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor

    Untitled

    Abstract: No abstract text available
    Text: BC107 SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. " " TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: TO-92 ABSOLUTE MAXIMUM RATINGS a t TanJj=25°C C haracteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF BC107 100MHz 200uA 200Hz

    marking B3A sot23-5

    Abstract: No abstract text available
    Text: BC856S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: SOT-23 ♦Com plem ent to BC846S ABSOLUTE MAXIMUM RATINGS a t Tflmb=1is r c _ C haracteristic Symbol Rating


    OCR Scan     		PDF BC856S OT-23 BC846S -10mA -10uA -100mA marking B3A sot23-5

    TM 69

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor In a plastic envelope using ’trench' technology. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK9514-30 T0220AB TM 69

    Untitled

    Abstract: No abstract text available
    Text: p BC846 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t Tamb=25°C C haracteristic Symbol R ating Vcbo 80 Collector-Base Voltage Unit V Collector-Emitter Voltage


    OCR Scan     		PDF BC846 S300uS 100mA 10inA 200uA 200Hz

    Untitled

    Abstract: No abstract text available
    Text: BC856 SEMICONDUCTOR FORWARD INTERNATIONA! ELECTRONICS LID. _ TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: TO-92 ABSOLUTE MAXIMUM RATINGS at Tan*=25°C C h a ra c te ristic Sym bol Rating » U nit i * C ollector-B ase V oltage


    OCR Scan     		PDF BC856

    transistor c1945

    Abstract: C1945 c1946 A 2531 IC A 2531 transistor c1946 Insulation25 C1949 transformer
    Text: mm QUALITY • [ techn o lo g ies DUAL HIGH-SPEED TRANSISTOR OPTOCOUPLERS HCPL-2530 HCPL-2531 PACKAGE DIMENSIONS DESCRIPTIOI The HCPL-2530/31 dual optocouplers contain two completely separated 700 nm GaAsP LED emitters each optically coupled to a high speed photodetector transistor.


    OCR Scan     		PDF HCPL-2530 HCPL-2531 HCPL-2530/31 CMR--10 insulation--2500 C1952 transistor c1945 C1945 c1946 A 2531 IC A 2531 transistor c1946 Insulation25 C1949 transformer

    Untitled

    Abstract: No abstract text available
    Text: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a


    OCR Scan     		PDF CA3146, CA3146A, CA3183, CA3183A CA3183

    transistor mpsu45

    Abstract: MPSU45 MPS-U45 MPSU95 TRANSISTOR 2SC Audio Amplifier Applications MPS-U95 MPSU-45 MPSU45 transistor Darlington pair IC with 15 Amp mps a70 pnp transistor
    Text: MPS-U45 SILICON NPN SILICON DARLINGTON TRANSISTOR NPN SILICON DARLINGTON AMPLIFIER TRANSISTOR . . designed fo r a m plifier and driver applications. • High DC C urrent Gain hpE = 25,000 (Min) @ l c = 200 mAdc 15,000 (Min) @ lc = 500 mAdc • C ollector-E m itter Breakdown Voltage —


    OCR Scan     		PDF MPS-U45 MPS-U95 01-MPS-AI3IDARLINGT0NI MPS-A70 MPS-A20 Q4-MPS-U45 transistor mpsu45 MPSU45 MPS-U45 MPSU95 TRANSISTOR 2SC Audio Amplifier Applications MPS-U95 MPSU-45 MPSU45 transistor Darlington pair IC with 15 Amp mps a70 pnp transistor

    transistor D 1557

    Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
    Text: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly


    OCR Scan     		PDF fi235bOS GG04Q 2701-F88 transistor D 1557 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power