BLF888
Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
Text: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W
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BLF888
BLF888
dvb-t2
j3076
Technical Specifications of DVB-T2 Transmitter
EZ90-25
ttf 103
C4532X7R1E475MT020U
RF35
sot979
EZ90-25-TP
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Untitled
Abstract: No abstract text available
Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
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BLF642
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J2735
Abstract: DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414
Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W
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BLF6G15L-500H;
BLF6G15LS-500H
BLF6G15L-500H
6G15LS-500H
J2735
DVB-t2
ATC800B
JESD625-A
61 TRANSISTOR
DVBT2
transistor smd 723
GP414
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C570X7R1H106KT000N
Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x
Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
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BLF642
771-BLF642112
BLF642
C570X7R1H106KT000N
SOT467
Technical Specifications of DVB-T2 Transmitter
DVB-T2
blf642,112
C570x
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blf642
Abstract: rogers 5880
Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
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BLF642
blf642
rogers 5880
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Untitled
Abstract: No abstract text available
Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W
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BLF6G15L-500H;
BLF6G15LS-500H
BLF6G15L-500H
6G15LS-500H
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Untitled
Abstract: No abstract text available
Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W
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BLF888
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Untitled
Abstract: No abstract text available
Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 — 16 September 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W
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BLF6G15L-500H;
BLF6G15LS-500H
BLF6G15L-500H
6G15LS-500H
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j3076
Abstract: BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378
Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W
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BLF888
j3076
BLF888
Technical Specifications of DVB-T2 Transmitter
J1455
DVB-T2
L33 TRANSISTOR
LDMOS digital
C4532X7R1E475MT020U
RF35
J1378
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Untitled
Abstract: No abstract text available
Text: BLF881; BLF881S UHF power LDMOS transistor Rev. 3 — 7 December 2010 Product data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
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BLF881;
BLF881S
BLF881
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blf881
Abstract: dvb-t2 C570X7R1H106KT000N DVB-T transistor amplifier
Text: BLF881; BLF881S UHF power LDMOS transistor Rev. 3 — 7 December 2010 Product data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
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BLF881;
BLF881S
BLF881
dvb-t2
C570X7R1H106KT000N
DVB-T transistor amplifier
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APT13003Z-E1
Abstract: transistor 2808 APT13003 bcd
Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003 is a high voltage, high speed switching NPN Power transistor specially designed for off-line switch mode power supplies with low output power.
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APT13003
APT13003
APT13003Z-E1
transistor 2808
APT13003 bcd
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13003D
Abstract: APT13003DI-G1
Text: Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003D is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power.
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APT13003D
O-126
O-251
APT13003D
O-126
O-251
13003D
APT13003DI-G1
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sot3
Abstract: marking 8A MUN5214T1
Text: MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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MUN5211T1
70/SOT
sot3
marking 8A
MUN5214T1
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Untitled
Abstract: No abstract text available
Text: BLP10H610 Broadband LDMOS driver transistor Rev. 3 — 25 September 2014 Product data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.
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BLP10H610
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Untitled
Abstract: No abstract text available
Text: BLP25M710 Broadband LDMOS driver transistor Rev. 1 — 29 August 2013 Product data sheet 1. Product profile 1.1 General description A 10 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Table 1. Application information
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BLP25M710
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Technical Specifications of DVB-T2 Transmitter
Abstract: No abstract text available
Text: BLP10H610 Broadband LDMOS driver transistor Rev. 2 — 22 April 2014 Objective data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. Table 1.
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BLP10H610
Technical Specifications of DVB-T2 Transmitter
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BLF188XR NXP
Abstract: blf188
Text: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.
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BLF188XR;
BLF188XRS
BLF188XR
BLF188XR NXP
blf188
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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bly89a
Abstract: Transistor bly89a
Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every
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Q01414fl
BLY89A
7Z675I
bly89a
Transistor bly89a
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ic TT 2222
Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
Text: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every
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BLY89A
PL-25W
ic TT 2222
transistor tt 2222
BLY89A
TT 2222 npn
Transistor bly89a
TT 2222
npn 2222 transistor
yl 3710
dfv 36
mb 3712
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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PHB36N06E
SQT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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PHB36N06E
SQT404
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