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    TRANSISTOR 975 Search Results

    TRANSISTOR 975 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 975 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC 2905

    Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
    Text: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.


    Original     		PDF 2SC4228 2SC4228 NEC 2905 NEC 1357 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC

    BLF888

    Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
    Text: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 BLF888 dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP

    Untitled

    Abstract: No abstract text available
    Text: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 BLF888

    J0266

    Abstract: J-0834 J1930 001aaj288
    Text: BLF871 UHF power LDMOS transistor Rev. 01 — 18 December 2008 Objective data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871 BLF871 J0266 J-0834 J1930 001aaj288

    blf878

    Abstract: ez90 j4213 Bv 42 transistor J0314 Reference blf878
    Text: BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from


    Original     		PDF BLF878 BLF878 ez90 j4213 Bv 42 transistor J0314 Reference blf878

    BLF871

    Abstract: DVB-T transistor amplifier rogers 5880 uhf amplifier design Transistor TRANSISTOR GENERAL DIGITAL L6 of transistor C 4212 900 mhz av transmitter D2140
    Text: BLF871 UHF power LDMOS transistor Rev. 03 — 21 September 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871 BLF871 DVB-T transistor amplifier rogers 5880 uhf amplifier design Transistor TRANSISTOR GENERAL DIGITAL L6 of transistor C 4212 900 mhz av transmitter D2140

    BLF871

    Abstract: J1930
    Text: BLF871 UHF power LDMOS transistor Rev. 02 — 5 March 2009 Preliminary data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871 BLF871 J1930

    Untitled

    Abstract: No abstract text available
    Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888

    j4213

    Abstract: blf878 rogers 5880 Bv 42 transistor J3125 h a 431 transistor Reference blf878 transistor w 431 PDF Datasheets 900 mhz av transmitter J0314
    Text: BLF878 UHF power LDMOS transistor Rev. 01 — 15 December 2008 Preliminary data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from


    Original     		PDF BLF878 BLF878 j4213 rogers 5880 Bv 42 transistor J3125 h a 431 transistor Reference blf878 transistor w 431 PDF Datasheets 900 mhz av transmitter J0314

    j3076

    Abstract: BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378
    Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 j3076 BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378

    Untitled

    Abstract: No abstract text available
    Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871; BLF871S BLF871 BLF871S

    Untitled

    Abstract: No abstract text available
    Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871; BLF871S BLF871 BLF871S

    13MM

    Abstract: PH1819-4N v6 4n diode
    Text: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point


    Original     		PDF PH1819-4N rl850 300mA 13MM PH1819-4N v6 4n diode

    BLF871

    Abstract: 900 mhz av transmitter DVB-T transistor amplifier OFDM transmitter UHF rogers 5880 UHF/UHF/blf871
    Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871; BLF871S BLF871 BLF871S 900 mhz av transmitter DVB-T transistor amplifier OFDM transmitter UHF rogers 5880 UHF/UHF/blf871

    cw 7808

    Abstract: voltage regulator 7808 7808 voltage regulator 7808 cw TRANSISTOR CW 7808 transistor 7808 ma 7808 BLF1049
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLF1049 UHF power LDMOS transistor Preliminary specification 2001 Nov 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1049 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLF1049 OT502A SCA73 603516/05/pp9 cw 7808 voltage regulator 7808 7808 voltage regulator 7808 cw TRANSISTOR CW 7808 transistor 7808 ma 7808 BLF1049

    GRM39

    Abstract: GRM708 RD05MMP1 diode GP 829 6030D
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) GRM39 GRM708 diode GP 829 6030D

    NPN planar RF transistor

    Abstract: NTE317
    Text: NTE317 Silicon NPN Transistor RF Power Output Description: The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe


    Original     		PDF NTE317 NTE317 100mA 30MHz/12 NPN planar RF transistor

    NTE317

    Abstract: 3 w RF POWER TRANSISTOR NPN NPN planar RF transistor
    Text: NTE317 Silicon NPN Transistor RF Power Output Description: The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe


    Original     		PDF NTE317 NTE317 100mA 30MHz/12 3 w RF POWER TRANSISTOR NPN NPN planar RF transistor

    GP 819

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) GP 819

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    transistor NEC D 822 P

    Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


    OCR Scan     		PDF 2SC4228 2SC4228 transistor NEC D 822 P NEC D 986 transistor NEC B 617 transistor NEC D 587 r44 marking transistor D 2624

    transistor NEC D 822 P

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


    OCR Scan     		PDF 2SC4228 2SC4228 transistor NEC D 822 P

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    transistor NEC B 617

    Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and


    OCR Scan     		PDF 2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568