TRANSISTOR 975 Search Results

TRANSISTOR 975 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 975 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NEC 2905 Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC Text: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.	Original	2SC4228 2SC4228 NEC 2905 NEC 1357 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC	PDF
BLF888 Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP Text: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W	Original	BLF888 BLF888 dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP	PDF
Untitled Abstract: No abstract text available Text: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W	Original	BLF888 BLF888	PDF
J0266 Abstract: J-0834 J1930 001aaj288 Text: BLF871 UHF power LDMOS transistor Rev. 01 — 18 December 2008 Objective data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The	Original	BLF871 BLF871 J0266 J-0834 J1930 001aaj288	PDF
blf878 Abstract: ez90 j4213 Bv 42 transistor J0314 Reference blf878 Text: BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from	Original	BLF878 BLF878 ez90 j4213 Bv 42 transistor J0314 Reference blf878	PDF
BLF871 Abstract: DVB-T transistor amplifier rogers 5880 uhf amplifier design Transistor TRANSISTOR GENERAL DIGITAL L6 of transistor C 4212 900 mhz av transmitter D2140 Text: BLF871 UHF power LDMOS transistor Rev. 03 — 21 September 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The	Original	BLF871 BLF871 DVB-T transistor amplifier rogers 5880 uhf amplifier design Transistor TRANSISTOR GENERAL DIGITAL L6 of transistor C 4212 900 mhz av transmitter D2140	PDF
BLF871 Abstract: J1930 Text: BLF871 UHF power LDMOS transistor Rev. 02 — 5 March 2009 Preliminary data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The	Original	BLF871 BLF871 J1930	PDF
Untitled Abstract: No abstract text available Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W	Original	BLF888	PDF
j4213 Abstract: blf878 rogers 5880 Bv 42 transistor J3125 h a 431 transistor Reference blf878 transistor w 431 PDF Datasheets 900 mhz av transmitter J0314 Text: BLF878 UHF power LDMOS transistor Rev. 01 — 15 December 2008 Preliminary data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from	Original	BLF878 BLF878 j4213 rogers 5880 Bv 42 transistor J3125 h a 431 transistor Reference blf878 transistor w 431 PDF Datasheets 900 mhz av transmitter J0314	PDF
j3076 Abstract: BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378 Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W	Original	BLF888 j3076 BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378	PDF
Untitled Abstract: No abstract text available Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The	Original	BLF871; BLF871S BLF871 BLF871S	PDF
Untitled Abstract: No abstract text available Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The	Original	BLF871; BLF871S BLF871 BLF871S	PDF
13MM Abstract: PH1819-4N v6 4n diode Text: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point	Original	PH1819-4N rl850 300mA 13MM PH1819-4N v6 4n diode	PDF
BLF871 Abstract: 900 mhz av transmitter DVB-T transistor amplifier OFDM transmitter UHF rogers 5880 UHF/UHF/blf871 Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The	Original	BLF871; BLF871S BLF871 BLF871S 900 mhz av transmitter DVB-T transistor amplifier OFDM transmitter UHF rogers 5880 UHF/UHF/blf871	PDF

cw 7808 Abstract: voltage regulator 7808 7808 voltage regulator 7808 cw TRANSISTOR CW 7808 transistor 7808 ma 7808 BLF1049 Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLF1049 UHF power LDMOS transistor Preliminary specification 2001 Nov 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1049 PINNING - SOT502A FEATURES • High power gain	Original	M3D379 BLF1049 OT502A SCA73 603516/05/pp9 cw 7808 voltage regulator 7808 7808 voltage regulator 7808 cw TRANSISTOR CW 7808 transistor 7808 ma 7808 BLF1049	PDF
GRM39 Abstract: GRM708 RD05MMP1 diode GP 829 6030D Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) GRM39 GRM708 diode GP 829 6030D	PDF
NPN planar RF transistor Abstract: NTE317 Text: NTE317 Silicon NPN Transistor RF Power Output Description: The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe	Original	NTE317 NTE317 100mA 30MHz/12 NPN planar RF transistor	PDF
NTE317 Abstract: 3 w RF POWER TRANSISTOR NPN NPN planar RF transistor Text: NTE317 Silicon NPN Transistor RF Power Output Description: The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe	Original	NTE317 NTE317 100mA 30MHz/12 3 w RF POWER TRANSISTOR NPN NPN planar RF transistor	PDF
GP 819 Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) GP 819	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
transistor NEC D 822 P Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624 Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.	OCR Scan	2SC4228 2SC4228 transistor NEC D 822 P NEC D 986 transistor NEC B 617 transistor NEC D 587 r44 marking transistor D 2624	PDF
transistor NEC D 822 P Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.	OCR Scan	2SC4228 2SC4228 transistor NEC D 822 P	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
transistor NEC B 617 Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568 Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and	OCR Scan	2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568	PDF

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TRANSISTOR 975 Search Results

TRANSISTOR 975 Result Highlights (5)

TRANSISTOR 975 Datasheets Context Search

NEC 2905

BLF888

Untitled

J0266

blf878

BLF871

BLF871

Untitled

j4213

j3076

Untitled

Untitled

13MM

BLF871

cw 7808

GRM39

NPN planar RF transistor

NTE317

GP 819

la 4440 amplifier circuit diagram 300 watt

transistor NEC D 822 P

transistor NEC D 822 P

2sb504

transistor NEC B 617