TRANSISTOR 9718 Search Results

TRANSISTOR 9718 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR 9718 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRGB4061D Abstract: IRF1010 Transistor marking code S IRGB4061DPBF Text: PD - 97189B IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA	Original	97189B IRGB4061DPbF IRF1010 O-220AB IRGB4061D IRF1010 Transistor marking code S IRGB4061DPBF	PDF
Untitled Abstract: No abstract text available Text: PD - 97189B IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA	Original	97189B IRGB4061DPbF IRF1010 O-220AB	PDF
Untitled Abstract: No abstract text available Text: PD - 97189 IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA	Original	IRGB4061DPbF O-220AB	PDF
Untitled Abstract: No abstract text available Text: PD - 97189A IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA	Original	7189A IRGB4061DPbF O-220AB	PDF
Untitled Abstract: No abstract text available Text: PD - 97188 IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA	Original	IRGB4056DPbF O-220AB	PDF
IGBT 600V 12A Abstract: IRGB4056DPBF igbt 12A600 Text: PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA	Original	7188A IRGB4056DPbF O-220AB IGBT 600V 12A IRGB4056DPBF igbt 12A600	PDF
Untitled Abstract: No abstract text available Text: PD - 97189A IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA	Original	7189A IRGB4061DPbF O-220AB	PDF
Untitled Abstract: No abstract text available Text: PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA	Original	7188A IRGB4056DPbF O-220AB	PDF
IRGB4056D Abstract: IGBT 600V 12A Text: PD - 97188 IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA	Original	IRGB4056DPbF O-220AB IRGB4056D IGBT 600V 12A	PDF
JE1100 Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466 Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices	OCR Scan		PDF
272048 Abstract: MAX EPLD TRANSISTOR JC 84-1MISR4 CY7C342B EME-6300H P26 TRANSISTOR failure test report EPLD Text: Cypress Semiconductor Qualification Report QTP# 97185 VERSION 1.0 November, 1997 CY7C342B 128-Macrocell MAX EPLD Cypress Semiconductor 128 Macrocell MAX EPLD - P26 Technology Device: CY7C342B Package: PLCC QTP# 97185, V. 1.0 Page 2 of 8 November, 1997	Original	CY7C342B 128-Macrocell 7C342B 7C342B CY7C342B-JC 272048 MAX EPLD TRANSISTOR JC 84-1MISR4 CY7C342B EME-6300H P26 TRANSISTOR failure test report EPLD	PDF
trw RF POWER TRANSISTOR Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .	OCR Scan		PDF
MSC1002 Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition	OCR Scan	28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram	PDF
HF power amplifier blf177 Abstract: blf177 108 amplifier NC08703 BLF177 philips ferroxcube 4c6 philips toroid 4c6 MGM404 Philips Components, Soft Ferrites Data Handbook M ferroxcube 4C6 toroid core philips toroidal transformer Text: APPLICATION NOTE A wideband linear power amplifier 1.6 − 28 MHz for 300 W PEP with 2 MOS transistors BLF177 NCO8703 Philips Semiconductors A wideband linear power amplifier (1.6 − 28 MHz) for 300 W PEP with 2 MOS transistors BLF177 CONTENTS 1 SUMMARY	Original	BLF177 NCO8703 SCA57 HF power amplifier blf177 blf177 108 amplifier NC08703 BLF177 philips ferroxcube 4c6 philips toroid 4c6 MGM404 Philips Components, Soft Ferrites Data Handbook M ferroxcube 4C6 toroid core philips toroidal transformer	PDF

LM1808 Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.	OCR Scan	LM741 MIL-M-38510, M-38510/ 10101BCC. MIL-M-38510 L-M-38510 LM1808 LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor	PDF
SMD transistor MARKING CODE 43 Abstract: smd code marking LP K 286 Philips TO-92 MARKING CODE W PDTC123ET PDTA123ET Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;	Original	PDTC123E 01-May-99) SMD transistor MARKING CODE 43 smd code marking LP K 286 Philips TO-92 MARKING CODE W PDTC123ET PDTA123ET	PDF
4C6 ferrite Abstract: ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731 SD1731-14 ssb transformer Text: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731-14	Original	SD1731-14 ST448) ST448 SD1731 4C6 ferrite ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731-14 ssb transformer	PDF
ferrite core transformer pin connection Abstract: power transformer from malaysia 4C6 ferrite FERRITE TRANSFORMER HF SSB APPLICATIONS planar impedance transformer planar transformer SD1731 SD1731-14 ST448 Text: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .50 0 4LF L (M17 4 ) epoxy sealed O R DE R CODE	Original	SD1731-14 ST448) ST448 SD1731 ferrite core transformer pin connection power transformer from malaysia 4C6 ferrite FERRITE TRANSFORMER HF SSB APPLICATIONS planar impedance transformer planar transformer SD1731-14 ST448	PDF
TH562 Abstract: th562 c 4C6 ferrite SD1731 ferrite core transformer pin connection 4C6 SPECIFICATIONS Text: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CO DE SD1731 BRANDING TH562 PIN CONNECTION	Original	SD1731 TH562) TH562 SD1731 TH562 th562 c 4C6 ferrite ferrite core transformer pin connection 4C6 SPECIFICATIONS	PDF
TH562 Abstract: TORIOD SD1731 th562 c ferrite core transformer pin connection IE transformer core 47UF63V Text: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731 BRANDING TH562 PIN CONNECTION	Original	SD1731 TH562) TH562 SD1731 TH562 TORIOD th562 c ferrite core transformer pin connection IE transformer core 47UF63V	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON 5 i. SD1731-14 ST448 •ILO RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P o u t = 250 W PEP WITH 12 dB GAIN .500 4LFL (M 174) epoxy sealed	OCR Scan	SD1731-14 ST448) SD1731 ST448 0D77b3b	PDF
transistor k 4213 Abstract: STMicroelectronics marking code date th562 SD1731 Date Code Marking STMicroelectronics FERRITE TRANSFORMER HF SSB APPLICATIONS k 4213 planar impedance transformer SD1731 datasheet Text: SD1731 TH562 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 13 dB GAIN DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar	Original	SD1731 TH562) SD1731 transistor k 4213 STMicroelectronics marking code date th562 Date Code Marking STMicroelectronics FERRITE TRANSFORMER HF SSB APPLICATIONS k 4213 planar impedance transformer SD1731 datasheet	PDF
Untitled Abstract: No abstract text available Text: Œ fï . SG S-IHO M SON l[Li ïï[ÊMO©S SD1731 TH562 RF & M ICRO W AVE TR AN SISTO R S HF SSB APPLIC ATIO N S . OPTIMIZED FOR SSB • 30 MHz ■ 50 VOLTS . EFFICIENCY 40% . COMMON EMITTER ■ GOLD METALLIZATION > P o u t = 220 W PEP WITH 13 dB GAIN PIN CONNECTION	OCR Scan	SD1731 TH562) SD1731	PDF
4C6 ferrite Abstract: No abstract text available Text: SGS-THOMSON m SD1731-14 ST448 RF & MICROWAVE TRANSISTO RS HF SSB APPLICATIONS PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION Pout = 250 W PEP WITH 12 dB GAIN .50 0 4 L F L ( M 1 7 4 ) epoxy sealed O R D ER CODE	OCR Scan	SD1731-14 ST448) ST448 SD1731 4C6 ferrite	PDF

TRANSISTOR 9718 Search Results

TRANSISTOR 9718 Result Highlights (5)

TRANSISTOR 9718 Datasheets Context Search

IRGB4061D

Untitled

Untitled

Untitled

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IGBT 600V 12A

Untitled

Untitled

IRGB4056D

JE1100

272048

trw RF POWER TRANSISTOR

MSC1002

HF power amplifier blf177

LM1808

SMD transistor MARKING CODE 43

4C6 ferrite

ferrite core transformer pin connection

TH562

TH562

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transistor k 4213

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4C6 ferrite