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    PDTC123E Price and Stock

    Rochester Electronics LLC PDTC123EMB,315

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    DigiKey PDTC123EMB,315 Bulk 78,775 11,225
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    Rochester Electronics LLC PDTC123EM,315

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    Nexperia PDTC123EU,115

    TRANS PREBIAS NPN 50V SOT323
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    DigiKey PDTC123EU,115 Reel 21,000 3,000
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    PDTC123EU,115 Cut Tape 931 1
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    Mouser Electronics PDTC123EU,115 112,554
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    Rochester Electronics PDTC123EU,115 71,000 1
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    TTI PDTC123EU,115 Reel 57,000 3,000
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    TME PDTC123EU,115 1
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    New Advantage Corporation PDTC123EU,115 78,000 1
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    Rochester Electronics LLC PDTC123ET,215

    TRANS PREBIAS NPN 50V SOT23
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    DigiKey PDTC123ET,215 Bulk 20,221 13,172
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    Nexperia PDTC123EM,315

    TRANS PREBIAS NPN 50V SOT883
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    DigiKey PDTC123EM,315 Reel 20,000 10,000
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    PDTC123EM,315 Cut Tape 1
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    Mouser Electronics PDTC123EM,315 7,854
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    Rochester Electronics PDTC123EM,315 40,000 1
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    PDTC123E Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PDTC123E Philips Semiconductors R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTC123EE Philips Semiconductors PDTC123E series, NPN resistor-equipped transistors, R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTC123EE,115 NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm; Package: SOT416 (SC-75); Container: Tape reel smd Original PDF
    PDTC123EEF Philips Semiconductors PDTC123E series, NPN resistor-equipped transistors, R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTC123EEF,115 NXP Semiconductors Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SC89 Original PDF
    PDTC123EET/R NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTC123EK Philips Semiconductors PDTC123E series, NPN resistor-equipped transistors, R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTC123EK Philips Semiconductors NPN Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 2.2 kohm Original PDF
    PDTC123EK,115 NXP Semiconductors Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SMT3 Original PDF
    PDTC123EKT/R NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTC123EM Philips Semiconductors PDTC123E series, NPN resistor-equipped transistors, R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTC123EM,315 NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm; Package: SOT883 (SC-101); Container: Tape reel smd Original PDF
    PDTC123EMB NXP Semiconductors NPN resistor-equipped transistor; R1 = 2.2 kohm, R2 = 2.2 kOhm Original PDF
    PDTC123EMB,315 NXP Semiconductors PDTC123EMB - NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm, SOT883B Package, Standard Marking, Reel Pack, SMD, Pitch 2mm Original PDF
    PDTC123EMT/R NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTC123ES Philips Semiconductors NPN Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 2.2 kohm Original PDF
    PDTC123ES Philips Semiconductors PDTC123E series, NPN resistor-equipped transistors, R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF
    PDTC123ES,126 NXP Semiconductors Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 500MW TO92-3 Original PDF
    PDTC123ET NXP Semiconductors PDTC123ET - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm - Complement: PDTA123ET ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 2.2 kOhm; Polarity: NPN ; Ptot max: 250 mW; Resistor ratio: 1 ; VCEO max: 50 V Original PDF
    PDTC123ET Philips Semiconductors NPN resistor-equipped transistor Original PDF

    PDTC123E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PDTA123EE

    Abstract: PDTC123ET PDTC123EE PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DAT PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Mar 18 2004 Aug 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ


    Original     		PDF PDTC123E R75/07/pp14 PDTA123EE PDTC123ET PDTC123EE PDTA123ET

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC123EMB DFN1006B-3 OT883B) PDTA123EMB. AEC-Q101

    PDTC123EE

    Abstract: PDTC123ET PDTA123EE PDTC123E PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123EU SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2004 Mar 18 2004 Aug 06 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC123E SCA76 R75/07/pp14 PDTC123EE PDTC123ET PDTA123EE PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123EU SC-75

    PDTC123EE

    Abstract: PDTC123ET PDTA123EE PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123EU SC-75 SC-89
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Mar 18 2004 Aug 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ


    Original     		PDF PDTC123E R75/07/pp14 PDTC123EE PDTC123ET PDTA123EE PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123EU SC-75 SC-89

    PDTA123ET

    Abstract: PDTC123ET marking code 10 sot23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES


    Original     		PDF M3D088 PDTC123ET MAM097 115002/00/03/pp8 PDTA123ET PDTC123ET marking code 10 sot23

    PDTC123ET

    Abstract: PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor Product specification Supersedes data of 1997 Dec 15 File under Discrete Semiconductors, SC04 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor


    Original     		PDF M3D088 PDTC123ET PDTA123ET. SCA60 115104/1200/02/pp8 PDTA123ET

    PDTC123ES

    Abstract: PDTC123EE PDTC123ET PDTA123EE mhc506 sot883 PDTC123E PDTC123EEF PDTC123EK PDTC123EM
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2003 Nov 26 2004 Mar 18 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC123E SCA76 R75/06/pp14 PDTC123ES PDTC123EE PDTC123ET PDTA123EE mhc506 sot883 PDTC123EEF PDTC123EK PDTC123EM

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 2.2 k Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC123EMB DFN1006B-3 OT883B) PDTA123EMB. AEC-Q101

    SMD transistor MARKING CODE 43

    Abstract: smd code marking LP K 286 Philips TO-92 MARKING CODE W PDTC123ET PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC123E 01-May-99) SMD transistor MARKING CODE 43 smd code marking LP K 286 Philips TO-92 MARKING CODE W PDTC123ET PDTA123ET

    PDTC123ET

    Abstract: PDTA123EK PDTC123E PDTC123EK PDTC123ES PDTC123EU PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC123E SCA75 613514/04/pp12 PDTC123ET PDTA123EK PDTC123EK PDTC123ES PDTC123EU PDTA123ET

    PDTA123EE

    Abstract: TC123E PDTC123ET PDTC123EE PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2003 Apr 10 2003 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC123E SCA75 R75/05/pp14 PDTA123EE TC123E PDTC123ET PDTC123EE PDTA123ET

    prtr5v0u6s

    Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
    Text: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years


    Original     		PDF 2002/95/EC. PMBTA42 PMEG3005EL PMEG6010EP PMR780SN PTVS12VS1UR PZU13y PMBTA42DS PMEG3005ET PMEG6010ER prtr5v0u6s csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    PDTA123ET

    Abstract: PDTC123ET marking code 10 sot23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 18 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123ET FEATURES


    Original     		PDF M3D088 PDTA123ET MAM100 115002/00/03/pp8 PDTA123ET PDTC123ET marking code 10 sot23

    PDTA123EE

    Abstract: PDTA123ET PDTA123E PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-75 SC-89
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2004 Apr 07 2004 Aug 02 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA123E SCA76 R75/07/pp14 PDTA123EE PDTA123ET PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-75 SC-89

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    PDTA123ET

    Abstract: PDTA123E PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-101 PDTC123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 14 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA123E SCA75 613514/04/pp12 PDTA123ET PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-101 PDTC123ET

    PUMH20

    Abstract: PBLS4004Y PUMD30 PUMH14 PUMB15 PUMH30 PMD2001D PBLS4003D PUMH15 PUMD9
    Text: Automotive small-signal discretes solutions Drive the future with our innovative portfolio Automotive Simplifying design through increased functionality By delivering more functionality from individual products, we help to cut development times. With just a few small-signal discretes several


    Original     		PDF

    transistor cross reference

    Abstract: RT1N241M N10 SOT363 SOT-363 marking n10 Transistor ROHM N14 N06 TRANSISTOR n10 marking code sot 23 RT1N441C mun5132 DTA114EEA
    Text: New Product Announcement July 2002 Announcing Full Line of 100mA Pre-biased Transistors in Surface Mount Packages Singles in SOT-523, SOT-323, SOT-23 & SC-59 Duals in SOT-363 & SOT-26 / SC-74 NPN PNP R1 R1 R2 R2 NPN Dual R 1 R2 R2 R 1 PNP Dual NPN/PNP Complementary Dual


    Original     		PDF 100mA OT-523, OT-323, OT-23 SC-59 OT-363 OT-26 SC-74 OT-23 transistor cross reference RT1N241M N10 SOT363 SOT-363 marking n10 Transistor ROHM N14 N06 TRANSISTOR n10 marking code sot 23 RT1N441C mun5132 DTA114EEA

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    PDTA123EE

    Abstract: PDTC123ET PDTC123EE PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DAT PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Apr 07 2004 Aug 02 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ


    Original     		PDF PDTA123E R75/07/pp14 PDTA123EE PDTC123ET PDTC123EE PDTA123ET

    EW NPN

    Abstract: PDTC123ET PDTA123ET
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 08 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTC123ET NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 typ. 2.2 k£2 each


    OCR Scan     		PDF PDTC123ET MAM097 PDTA123ET. 115002/00/03/pp8 EW NPN PDTC123ET PDTA123ET