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    TRANSISTOR 7 BW 48 Search Results

    TRANSISTOR 7 BW 48 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 7 BW 48 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H7CR-BW-500

    Abstract: H7CR-8 H7CR-B manual Omron H7CR H7CR-114 H7CR-BWVG H7CR OMRON DIGITAL COUNTER H7CR manual omron h7crbwvg 500 H7CR-CW DIGITAL COUNTER
    Text: Digital Counter H7CR DIN 48 x 48 mm Counters with Easy-to-use Functions Designed with an emphasis on ease of operation. All models except -A, and -SA type equipped with prescale function which displays in units of actual physical parameters (length, volume, etc.).


    Original     		PDF IEC1010-1/EN61010-1 H7CR-8/11 M012-E1-1B H7CR-BW-500 H7CR-8 H7CR-B manual Omron H7CR H7CR-114 H7CR-BWVG H7CR OMRON DIGITAL COUNTER H7CR manual omron h7crbwvg 500 H7CR-CW DIGITAL COUNTER

    H7CR OMRON DIGITAL COUNTER

    Abstract: H7CR manual Omron H7CR H7CR-BW-500 H7CR-B manual Omron H7CR-B h7cr-8 H7CR-BW H7CR COUNTER OMRON free pdf transistor a4s
    Text: Digital Counter H7CR DIN 48 x 48 mm Counters with Easy-to-use Functions Designed with an emphasis on ease of operation. All models except -A, and -SA type equipped with prescale function which displays in units of actual physical parameters (length, volume, etc.).


    Original     		PDF EN61010-1 H7CR-8/11 M012-E1-01D 75-344-7119/Fax: H7CR OMRON DIGITAL COUNTER H7CR manual Omron H7CR H7CR-BW-500 H7CR-B manual Omron H7CR-B h7cr-8 H7CR-BW H7CR COUNTER OMRON free pdf transistor a4s

    QF30AA60

    Abstract: QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60
    Text: TRANSISTOR MODULE SQD200A40/60 UL;E76102 （M） 95max 80±0.25 23 23 ● IC＝200A, 62max 48±0.25 15 （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 4ｰφ5.5 1 2 3 C1 E1 C1 B2 E2 VCEX＝400/600V


    Original     		PDF SQD200A40/60 E76102 SQD200A 95max IC200A, 62max 110Tab 30max VCEX400/600V QF30AA60 QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60

    Untitled

    Abstract: No abstract text available
    Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical


    Original     		PDF RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc

    Untitled

    Abstract: No abstract text available
    Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical


    Original     		PDF RFHA1042 225MHz 450MHz 450MHz RF400-2 -26dBc DS120613

    Untitled

    Abstract: No abstract text available
    Text: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990

    ELTEC INSTRUMENTS

    Abstract: CH-8712 staefa CH-8712 Pyroelectric Detectors
    Text: Model 482 High Gain Thermally Compensated Pyroelectric IR Detector Manufactured under one or more of the following U.S. patents: 3,839,640 - 4,218,620 - 4,326,663 - 4,384,207 - 4,437,003 - 4,441,023 - 4,523,095 Model 482 consists of two lithium tantalate sensing elements, a load


    Original     		PDF CH-8712 ELTEC INSTRUMENTS staefa CH-8712 Pyroelectric Detectors

    transistor 7350 A

    Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor 7350
    Text: AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19060E Hz--1990 AGR19060E AGR19060XU AGR19060EF AGR19060XE 12-digit transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A transistor 7350

    100B100JCA500X

    Abstract: AGR19090E AGR19090EF AGR19090EU JESD22-C101A R190 19090
    Text: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090E AGR19090EU AGR19090EF 100B100JCA500X AGR19090EF AGR19090EU JESD22-C101A R190 19090

    transistor 7350

    Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
    Text: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19060E Hz--1990 AGR19060E DS04-078RFPP DS01-216RFPP) transistor 7350 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A transistor z14 L

    100B100JCA500X

    Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
    Text: Preliminary Data Sheet March 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090E DS04-079RFPP DS04-034RFPP) 100B100JCA500X AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A

    100B100JCA500X

    Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090E DS04-160RFPP DS04-079RFPP) 100B100JCA500X AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A

    transistor 7350

    Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
    Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496

    CH-8712

    Abstract: staefa CH-8712 ELTEC staefa RS 101 reference eltec infrared pyroelectric, gas ELTEC INSTRUMENTS
    Text: Model 481 Miniature Single Element Pyroelectric IR Detector With Source Follower Manufactured under one or more of the following U.S. patents: 3,839,640 - 4,218,620 - 4,326,663 - 4,384,207 - 4,437,003 - 4,441,023 - 4,523,095 Model 481 contains a single lithium


    Original     		PDF CH-8712 staefa CH-8712 ELTEC staefa RS 101 reference eltec infrared pyroelectric, gas ELTEC INSTRUMENTS

    Untitled

    Abstract: No abstract text available
    Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19125E Hz--1990 AGR19125EU AGR19125EF

    CA3600E

    Abstract: 2n3055 pinout terminals of 2n3055 2N3055 inverter schematic diagram 2n3055 voltage regulator HCA10014 1A Dual Power Operational Amplifier t 2N3055 1N914 CA3085
    Text: HCA10014 Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output HCA10014 op amp combines the advantage of both CMOS and bipolar transistors. Gate protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very high input


    Original     		PDF HCA10014 15MHz, HCA10014 CA3600E 2n3055 pinout terminals of 2n3055 2N3055 inverter schematic diagram 2n3055 voltage regulator 1A Dual Power Operational Amplifier t 2N3055 1N914 CA3085

    100B100JW500X

    Abstract: AGR19125E AGR19125EF AGR19125EU JESD22-C101A 1961-25
    Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19125E Hz--1990 AGR19125E AGR19125EU AGR19125EF IS-95 IS-95) 100B100JW500X AGR19125EF AGR19125EU JESD22-C101A 1961-25

    J555

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19125E Hz--1990 AGR19125EU AGR19125EF DS01-215RFPP J555

    block diagram of ca3130

    Abstract: CA3130 pin diagram of IC ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent Ic2 ca3130 about the IC ca3130 IC1 CA3130 CA3130T CA3600E
    Text: CA3130, CA3130A Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very-high-input


    Original     		PDF CA3130, CA3130A 15MHz, CA3130A CA3130 -55oC block diagram of ca3130 pin diagram of IC ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent Ic2 ca3130 about the IC ca3130 IC1 CA3130 CA3130T CA3600E

    pin diagram of IC ca3130

    Abstract: IC1 CA3130 CURRENT TO VOLTAGE CONVERTER CA3130 ca3130 equivalent CA3131 IC1 CA3130 CA3600E about the IC ca3130 CA3130AS pin diagram of ca3130
    Text: CA3130, CA3130A S E M I C O N D U C T O R 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output November 1996 Features Description • MOSFET Input Stage Provides: - Very High ZI = 1.5 TΩ 1.5 x 1012Ω (Typ) - Very Low II = 5pA (Typ) at 15V Operation


    Original     		PDF CA3130, CA3130A 15MHz, CA3130A CA3130 1-800-4-HARRIS pin diagram of IC ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent CA3131 IC1 CA3130 CA3600E about the IC ca3130 CA3130AS pin diagram of ca3130

    IC1 CA3130 CURRENT TO VOLTAGE CONVERTER

    Abstract: IC1 CA3130 CA3130 peak detector pin diagram of IC ca3130 ca3130 pin diagram of ca3130 ca3130 equivalent ca31305 block diagram of ca3130 CA3130 as a low pulse generator
    Text: CA3130 S E M I C O N D U C T O R BiMOS Operational Amplifier with MOSFET Input/CMOS Output April 1993 Features Description • MOSFET Input Stage Provides: - Very High ZI = 1.5 TΩ 1.5 x 1012Ω Typ. - Very Low II = 5pA Typ. at 15V Operation = 2pA Typ. at 5V Operation


    Original     		PDF CA3130 CA3130A CA3130 AN6668 CA3600E* 150mW 50kHz CA3600E) IC1 CA3130 CURRENT TO VOLTAGE CONVERTER IC1 CA3130 CA3130 peak detector pin diagram of IC ca3130 pin diagram of ca3130 ca3130 equivalent ca31305 block diagram of ca3130 CA3130 as a low pulse generator

    transistor su 312

    Abstract: No abstract text available
    Text: W a t k i n s - J o h n s o n : T h e C e l l E x t e n d e r s Power Amplifiers SA1068 C D M A 1 0 .0 -W a tt 1.93 G H z to 1.99 G H z L in e a r P o w e r A m p lifie r M o d u le • ■ 45 iB Sain PláB:+48 dBm atkins-Johnson’s SA1068 Power W Amplifier provides exceptional


    OCR Scan     		PDF SA1068 SA1068 transistor su 312

    Untitled

    Abstract: No abstract text available
    Text: CALEX MANUFACTURING CO S2E D I IflllESG GDGIGBT 2^7 ICEX Models 166 and 167 Bridgesensors 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 BRIDGE POWER SUPPLY FAX: (510) 687-3333 7 1 -U -0 7 The bridge power supply is an adjustable regulated


    OCR Scan     		PDF

    2SC4848

    Abstract: c5ca
    Text: h* 7 > y X $ / T ransistors 2SC 4848 2SC4848 X fc°$ * V 7 V7*Is - 1 M NPN y 1J U > h 7 > V * $ Epitaxial Planar N P N Silicon Transistor X 't y 3-'s'? \s%r 3. \s— $ /S w itc h in g Regulator • • « * Dimensions U n it: mm) 1) 4.5±0.2 r t f = 0 .1 8 ms (Typ.) ( lc = 5 A )


    OCR Scan     		PDF 2SC4848 2SC4848 c5ca