D1486
Abstract: 2SC4342
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
|
Original
|
2SC4342
2SC4342
O-126
D1486
|
PDF
|
2SA1741
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is
|
Original
|
2SA1741
2SA1741
|
PDF
|
2SC4550
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
|
Original
|
2SC4550
2SC4550
|
PDF
|
NEC 2sc4552
Abstract: 2SC4552
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
|
Original
|
2SC4552
2SC4552
NEC 2sc4552
|
PDF
|
D1316
Abstract: 2SA1744
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is
|
Original
|
2SA1744
2SA1744
D1316
|
PDF
|
2SC4551
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
|
Original
|
2SC4551
2SC4551
|
PDF
|
2SC4351
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for
|
Original
|
2SC4351
2SC4351
|
PDF
|
2SA1843
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
|
Original
|
2SA1843
2SA1843
|
PDF
|
2SC4553
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a
|
Original
|
2SC4553
2SC4553
|
PDF
|
2SA1646
Abstract: 2SA1646-Z C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1646, 2SA1646-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1646 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm speed switching and features a very low collector-to-emitter
|
Original
|
2SA1646,
2SA1646-Z
2SA1646
2SA1646-Z
C11531E
|
PDF
|
D1490
Abstract: 2SC2334 2SA1010
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2334 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching
|
Original
|
2SC2334
2SC2334
O-220AB
O-220AB)
2SA1010
D1490
2SA1010
|
PDF
|
2SA1645
Abstract: 2SA1645-Z
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1645, 2SA1645-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm speed switching and features a very low collector-to-emitter
|
Original
|
2SA1645,
2SA1645-Z
2SA1645
2SA1645-Z
|
PDF
|
RD 15 hf mitsubishi
Abstract: RD06HHF1-101 RD06HHF
Text: < Silicon RF Power MOS FET Discrete > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING RD06HHF1 is a MOS FET type transistor specifically 1.3+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
|
Original
|
RD06HHF1
30MHz
RD06HHF1
30MHz
RD06HHF1-101
Oct2011
RD 15 hf mitsubishi
RD06HHF
|
PDF
|
RD06HVF1
Abstract: fet transistor rf RF Transistor s-parameter vhf
Text: < Silicon RF Power MOS FET Discrete > RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING RD06HVF1 is a MOS FET type transistor specifically 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
|
Original
|
RD06HVF1
175MHz
RD06HVF1
175MHz
RD06HVF1-101
Oct2011
fet transistor rf
RF Transistor s-parameter vhf
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING RD06HVF1 is a MOS FET type transistor specifically 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
|
Original
|
RD06HVF1
175MHz
RD06HVF1
175MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING RD06HHF1 is a MOS FET type transistor specifically 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
|
Original
|
RD06HHF1
30MHz
RD06HHF1
30MHz
|
PDF
|
2SC3570
Abstract: D1618
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC3570 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm voltage high-speed switching, and is ideal for use in drivers such as
|
Original
|
2SC3570
2SC3570
D1618
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
|
Original
|
NTE342
175MHz)
NTE342
175MHz
100mA,
600mW,
|
PDF
|
2Sc2335
Abstract: transistor 2sc2335 how to check ic ship 2SC2335 equivalent 2sC2335 TRANSISTOR equivalent 2sc2335 transistor
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATION high-voltage switching, and is ideal for use as a driver in devices such
|
Original
|
2SC2335
2SC2335
O-220AB
O-220AB)
transistor 2sc2335
how to check ic ship
2SC2335 equivalent
2sC2335 TRANSISTOR equivalent
2sc2335 transistor
|
PDF
|
NTE342
Abstract: 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w
Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
|
Original
|
NTE342
175MHz)
NTE342
175MHz
100mA,
600mW,
4 watt VHF
transistor 6w
"RF Power Amplifiers"
transistor power rating 5w
|
PDF
|
NTE342
Abstract: No abstract text available
Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
|
Original
|
NTE342
175MHz)
NTE342
175MHz
100mA,
600mW,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W
|
OCR Scan
|
2SC4838
2SC4838
65GHz.
65GHz,
2SC4525
|
PDF
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
|
PDF
|
TE 2556
Abstract: T31B 2SC4526 2SC4525 2SC4838 286j
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2S C 4838 is a silicon NPN epitaxial planar typ e transistor Dimension in mm specifically designed fo r RF pow er am plifiers in 1.65GHz. FEATURES • High pow er gain : Gob £ 9.3dB, Po 6 6W
|
OCR Scan
|
2SC4838
2SC4838
65GHz.
65GHz,
2SC4525
2SC4526
2SC4526
TE 2556
T31B
2SC4525
286j
|
PDF
|
