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    TRANSISTOR 66A Search Results

    TRANSISTOR 66A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 66A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CEB63A3

    Abstract: cep63a3 cEp63A
    Text: CEP63A3/CEB63A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 66A, RDS ON = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP63A3/CEB63A3 O-220 O-263 CEB63A3 cep63a3 cEp63A

    Untitled

    Abstract: No abstract text available
    Text: AUIRG4PH50S AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency


    Original     		PDF AUIRG4PH50S O-247AC O-247AC

    TRANSISTOR BDX

    Abstract: pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR 150w darlington transistor to3 package BDX66C Transistor BDX66A BDX66B
    Text: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO


    Original     		PDF BDX66 -100V -120V O-204AA) TRANSISTOR BDX pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR 150w darlington transistor to3 package BDX66C Transistor BDX66A BDX66B

    Untitled

    Abstract: No abstract text available
    Text: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO


    Original     		PDF BDX66 -100V -120V O-204AA)

    2N0807

    Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
    Text: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID


    Original     		PDF SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB80N08S2-07 SPI80N08S2-07 P-TO220-3-1 2N0807 Q67060-S6082 Q67040-S4263 2n08 Q67040-S4264

    048N06L

    Abstract: IPP048N06L IPB048N06L IEC61249-2-21 PG-TO220-3 GS-20
    Text: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature


    Original     		PDF IPP048N06L IPB048N06L IEC61249-2-21 IPP048N06L IPB048N06L P-TO220-3-1 P-TO263-3-2 048N06L 048N06L IEC61249-2-21 PG-TO220-3 GS-20

    048N06L

    Abstract: IPP048N06L IPB048N06L PG-TO220-3 66a smd
    Text: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature


    Original     		PDF IPP048N06L IPB048N06L IPP048N06L IPB048N06L P-TO220-3-1 P-TO263-3-2 048N06L 048N06L PG-TO220-3 66a smd

    048n06l

    Abstract: 44 SMD dpak
    Text: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature


    Original     		PDF IPP048N06L IPB048N06L IPP048N06L IPB048N06L P-TO220-3-1 048N06L P-TO263-3-2 048n06l 44 SMD dpak

    048N06L

    Abstract: No abstract text available
    Text: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature


    Original     		PDF IPP048N06L IPB048N06L IPP048N06L IPB048N06L P-TO220-3-1 048N06L P-TO263-3-2 048N06L

    IPB048N06L

    Abstract: IPP048N06L smd 113 j D 92 M 03 DIODE PG-TO220-3
    Text: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMDversion ID 60 V 4.4 m: 100 A • 175 °C operating temperature


    Original     		PDF IPP048N06L IPB048N06L IPP048N06L IPB048N06L PG-TO220-3 PG-TO263-3 048N06L smd 113 j D 92 M 03 DIODE PG-TO220-3

    2N0807

    Abstract: Q67060-S6082 SPB80N08S2-07 S4264 ANPS071E SPI80N08S2-07 SPP80N08S2-07 A410
    Text: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 7.1 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO262 -3-1 P- TO263 -3-2


    Original     		PDF SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 SPP80N08S2-07 Q67040-S4263 Q67040-S4264 2N0807 Q67060-S6082 2N0807 Q67060-S6082 SPB80N08S2-07 S4264 ANPS071E SPI80N08S2-07 A410

    PN0807

    Abstract: SPB100N08S2-07 SPP100N08S2-07 smd diode UM 07 BSPB100N08S2-07 66a smd
    Text: SPP100N08S2-07 SPB100N08S2-07 Preliminary data OptiMOS=Power-Transistor Feature  N-Channel Product Summary  Enhancement mode VDS 75 V 175°C operating temperature RDS on max. SMD version 6.8 m  Avalanche rated ID 100 A  dv/dt rated P-TO263-3-2 Type


    Original     		PDF SPP100N08S2-07 SPB100N08S2-07 P-TO263-3-2 P-TO220-3-1 Q67060-S6044 PN0807 P-TO263-3-2 Q67060-S6046 P-TO220-3-1 PN0807 SPB100N08S2-07 SPP100N08S2-07 smd diode UM 07 BSPB100N08S2-07 66a smd

    PN0807

    Abstract: 66a smd D66A Q67060-S6044 ANPS071E SPB100N08S2-07 SPP100N08S2-07 H14F
    Text: SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 6.8 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated


    Original     		PDF SPP100N08S2-07 SPB100N08S2-07 Q67060-S6044 PN0807 Q67060-S6046 BSPP100N08S2-07 BSPB100N08S2-07, PN0807 66a smd D66A Q67060-S6044 ANPS071E SPB100N08S2-07 SPP100N08S2-07 H14F

    Untitled

    Abstract: No abstract text available
    Text: SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 6.8 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated


    Original     		PDF SPP100N08S2-07 SPB100N08S2-07 Q67060-S6044 PN0807 Q67060-S6046 BSPP100N08S2-07 BSPB100N08S2-07,

    PN0807

    Abstract: smd diode marking code SM ANPS071E SPB100N08S2-07 SPP100N08S2-07 INFINEON PART MARKING to263 6020G Diode smd code sm 68M100
    Text: SPP100N08S2-07 SPB100N08S2-07 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • 175°C operating temperature P- TO263 -3-2 • Avalanche rated 75 V 6.8 mΩ 100 A P- TO220 -3-1 • dv/dt rated


    Original     		PDF SPP100N08S2-07 SPB100N08S2-07 Q67060-S6044 Q67060-S6046 PN0807 BSPP100N08S2-07 BSPB100N08S2-07, PN0807 smd diode marking code SM ANPS071E SPB100N08S2-07 SPP100N08S2-07 INFINEON PART MARKING to263 6020G Diode smd code sm 68M100

    4n0609

    Abstract: F45A IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 PG-TO263-3-2 4N06
    Text: IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 9.2 mΩ ID 45 A Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 PG-TO263-3-2 4N0609 IPI45N06S4-09 PG-TO262-3-1 4n0609 F45A IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 PG-TO263-3-2 4N06

    2N0807

    Abstract: Q67040-S4263 66a smd Q67040-S4264 SPB80N08S2-07 SMD diode 132A S4264 SPP80N08S2-07 6020G
    Text: SPP80N08S2-07 SPB80N08S2-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode •=175°C operating temperature VDS 75 V RDS on max. SMD version 7.1 mΩ ID 80 A P-TO263-3-2 • Avalanche rated P-TO220-3-1


    Original     		PDF SPP80N08S2-07 SPB80N08S2-07 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4263 2N0807 P-TO263-3-2 2N0807 Q67040-S4263 66a smd Q67040-S4264 SPB80N08S2-07 SMD diode 132A S4264 SPP80N08S2-07 6020G

    ITD50N04S4L-07

    Abstract: No abstract text available
    Text: ITD50N04S4L-07 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS on ,max 7.2 mΩ ID 50 A Features • Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF ITD50N04S4L-07 PG-TO252-5 PG-TO252-5-311 4T04L07 ITD50N04S4L-07

    4N04L08

    Abstract: IPG20N04S4L F17 DIODE IPG20N04S4L-08
    Text: IPG20N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max4) 8.2 mW ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N04S4L-08 4N04L08 4N04L08 IPG20N04S4L F17 DIODE IPG20N04S4L-08

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


    OCR Scan     		PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922