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    IPD50N04S4L-08

    Abstract: 4N04L08 IPD50N04S4-08 PG-TO252-3-313 ANPS071E 8025A
    Text: IPD50N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 7.3 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD50N04S4L-08 PG-TO252-3-313 IPD50N04S4-08 4N04L08 IPD50N04S4L-08 4N04L08 IPD50N04S4-08 PG-TO252-3-313 ANPS071E 8025A

    4N04L08

    Abstract: IPG20N04S4L F17 DIODE IPG20N04S4L-08
    Text: IPG20N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max4) 8.2 mW ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N04S4L-08 4N04L08 4N04L08 IPG20N04S4L F17 DIODE IPG20N04S4L-08

    4N04L08

    Abstract: DIODE smd marking Ag F45A smd diode marking DD IPI45N04S4L-08 IPB45N04S4L IPB45N04S4L-08 PG-TO263-3-2 D-22A GD25Q
    Text: IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 7.6 mΩ ID 45 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N04L08 IPI45N04S4L-08 4N04L08 DIODE smd marking Ag F45A smd diode marking DD IPI45N04S4L-08 IPB45N04S4L IPB45N04S4L-08 PG-TO263-3-2 D-22A GD25Q