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    TRANSISTOR 667 7A Search Results

    TRANSISTOR 667 7A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 667 7A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc1943 circuit diagram

    Abstract: TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram BD139 transistor circuit diagram TIP31 NPN Transistor diagram 2N3055 4D 2N3055 TO-218 Package BU108 tip122 tip127 audio amp schematic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped,


    Original     		PDF BU323Z TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2sc1943 circuit diagram TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram BD139 transistor circuit diagram TIP31 NPN Transistor diagram 2N3055 4D 2N3055 TO-218 Package BU108 tip122 tip127 audio amp schematic

    IR3001

    Abstract: pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 PNP MJF15031 Complementary Power Transistors For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF15030 MJF15031 MJE15030 MJE15031 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 IR3001 pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c

    MJ802 EQUIVALENT

    Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. •


    Original     		PDF MJ16110* MJW16110* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ802 EQUIVALENT 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent

    bd139 equivalent transistor

    Abstract: transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE pin configuration transistor bd140 transistor bd610 transistor equivalent book 2sc2238 ST T8 3580
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16106  Data Sheet Designer's NPN Silicon Power Transistor Switchmode Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. • • • • • • POWER TRANSISTORS


    Original     		PDF MJE16106 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 bd139 equivalent transistor transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE pin configuration transistor bd140 transistor bd610 transistor equivalent book 2sc2238 ST T8 3580

    motorola 415 D2PAK

    Abstract: 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL44D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network


    Original     		PDF BUL44D2 BUL44D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C motorola 415 D2PAK 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c

    BD127

    Abstract: transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18206 MJF18206  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS The MJE/MJF18206 have an application specific state–of–the–art die dedicated to


    Original     		PDF MJE/MJF18206 MJE18206 MJF18206 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD127 transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007

    transistor bc 647

    Abstract: 380 darlington to3 ibm motorola 415 D2PAK 726 MOTOROLA TRANSISTORS 3427 motorola transistor 2N6547 DIODE 2N4002 2N5886 Structure BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUD44D2 is state–of–art High Speed High gain BIPolar transistor H2BIP .


    Original     		PDF BUD44D2 BUD44D2 Fully32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B transistor bc 647 380 darlington to3 ibm motorola 415 D2PAK 726 MOTOROLA TRANSISTORS 3427 motorola transistor 2N6547 DIODE 2N4002 2N5886 Structure BU326 BU108

    IBEK 24 IPS 10-05-T

    Abstract: melcher k 2000 Melcher M 2000 IBEK 24 IPS 10-1515-T MELCHER 512 10-1212-T melcher DC- DC Converter Melcher M 1000 Melcher 1000 melcher m series
    Text: 10 Watt-Family DC-DC Converters <40 W IBEK DC-DC Converters Rugged Environment 10 Watt-Family Input to output isolation test voltage up to 5 kVrms 1 or 2 Outputs: IPS 10, IPW 10, IPZ 5 Input voltage ranges: 10.33 V DC and 18.72 V DC • Extremely high isolation test voltages


    Original     		PDF

    AN569

    Abstract: MTY10N100E transistor 667 7A
    Text: MOTOROLA Order this document by MTY10N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY10N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 10 AMPERES 1000 VOLTS


    Original     		PDF MTY10N100E/D MTY10N100E MTY10N100E/D* AN569 MTY10N100E transistor 667 7A

    transistor 667 7A

    Abstract: AN569 MTW10N100E
    Text: MOTOROLA Order this document by MTW10N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW10N100E Motorola Preferred Device TMOS POWER FET 10 AMPERES 1000 VOLTS RDS on = 1.3 OHM


    Original     		PDF MTW10N100E/D O-247 MTW10N100E MTW10N100E/D* transistor 667 7A AN569 MTW10N100E

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


    Original     		PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G

    27e transistor

    Abstract: iSS TRANSISTOR bd277
    Text: P ow er Transistors File Number 667 HA RR IS S E M I C O N D S E C T O R BD277 27E D • 4 3 0 2 2 7 1 D02a].33 3 « H A S T - 3 3 - 2 -1 7-A, 70-W, Epitaxial-Base, Silicon P -N-P VERSAWATT Transistors For A pp lication s in Series and Shunt Regulators Features:


    OCR Scan     		PDF BD277 T0-220AB O-22QAB BD277 43G2271 QD2Q13S 27e transistor iSS TRANSISTOR

    Q62702-C2325

    Abstract: No abstract text available
    Text: SIEMENS BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain * Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN 2 Q62702-C2325 1 =B BC 807-25W 5Bs Q62702-C2326


    OCR Scan     		PDF 07-16W BC817W, BC818W Q62702-C2325 07-25W Q62702-C2326 07-40W Q62702-C2327 OT-323 08-16W Q62702-C2325

    BD277

    Abstract: 1754-3 92CS-I8007
    Text: G E SOLI D 01 STATE 3875081 G E SOLID STATE _ 3075061 01E 0017S4H D •T^ 17542 ~ 7 2/ Pro Electron Pow er Transistors ' File Number 667 BD277 7-A, 70-W, Epitaxial-Base, Silicon


    OCR Scan     		PDF GG1754H BD277 BD277 O-220AB 92CS-iaooi 92CS-i80i2 92CS-I8007 1754-3 92CS-I8007

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2-Phase Stepper-Motor Driver TLE 4728 Prelim inary Data Bipolar-IC Features • • • • • • • • • • 2 x 1 amp. full bridge outputs Integrated driver, control logic and current control chopper Fast free-wheeling diodes Max. supply voltage 45 V


    OCR Scan     		PDF P-DSO-24-1 Q6700-A9077

    10N100E

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TW 10N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TW 10N 100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 10 AMPERES


    OCR Scan     		PDF 10N100E/D 340K-01 10N100E

    IBEK 24 IPS 10-05-T

    Abstract: IBEK 24 IPS 10-1515-T 10-05-TC 10-1515-T 10-12-T 24ips10 5-1212-T
    Text: 10 Watt-Family DC-DC Converters <40 W IBEK DC-DC Converters Rugged Environment 10 Watt-Family Input to output isolation test voltage up to 5 kVrm, 1 or 2 Output*: IPS 10, PW10, IPZ 5 Input voltage ranges: 10—33 V DC and 18.72 V DC • Extremely high isolation test voltages


    OCR Scan     		PDF

    2SB645

    Abstract: 2sd657 SiS 671 SIS 672 2SB646 2SB654 SIS 661 2SB656 2SB647 2SB648
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF Tc-25 100kHz 2SB645 2sd657 SiS 671 SIS 672 2SB646 2SB654 SIS 661 2SB656 2SB647 2SB648

    2SC793

    Abstract: 2SC633A 2SA653 2SC1060 C633A 138B 2SC1061 2SC1213 2SC519 2SC520
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SC633A 2SC634A 2SC1079 2SC1080 2SC1382 2SC793 2SC633A 2SA653 2SC1060 C633A 138B 2SC1061 2SC1213 2SC519 2SC520

    2SD675

    Abstract: 2sd676 2SD674 2SD673 2SB631 2SD600 2SD612 2SD613 2SD638 2SD639
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SD669 7c-25-C) 2SD673 2SD674 2SD675 2SD676 2SD675 2SD673 2SB631 2SD600 2SD612 2SD613 2SD638 2SD639

    transistor 1201 1203 1205

    Abstract: 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282
    Text: ALPHANUMERICAL INDEX Type Function Number Page Number AVS08 V fH Automatic Mains Selector 110/220V AC for SMPS < 200W 937 AVS10 Automatic Mains Selector (110/220V AC) for SMPS < 3CI0W 943 / Automatic Mains Selector (110/220V AC) for SMPS < 500W 949 v / Automatic Voltage Switch (SMPS < 300W ).


    OCR Scan     		PDF AVS08 AVS10 110/220V TEA6420J TEA6422 TEA6425 TEA6430 TEA7605 transistor 1201 1203 1205 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder th is docum ent by MTY10N1OOE/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T Y IO N IO O E TMOS E-FET ™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FET


    OCR Scan     		PDF MTY10N1OOE/D MTY10N100E/D

    Untitled

    Abstract: No abstract text available
    Text: Motor driver ICs 3-phase motor driver BA6871BS The BA6871 BS is a 3-phase, full-wave, pseudo-linear motor driver suited for VCR capstan motors. The IC has a torque ripple cancellation circuit to reduce wow and flutter, and an output transistor saturation prevention circuit that


    OCR Scan     		PDF BA6871BS BA6871

    10N100E

    Abstract: 10N100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole TMOS POWER FET 10 AMPERES 1000 VOLTS RDS on = 1-3 0 H M N-Channel Enhancement-Mode Silicon Gate This high volta ge M O S FET uses an advanced term ination


    OCR Scan     		PDF 0E-05 0E-04 0E--03 0E-02 0E-01 10N100E 10N100