la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
PDF
|
TRANSISTOR BC 206 PNP
Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
Text: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V
|
OCR Scan
|
MDC03
TRANSISTOR BC 206 PNP
Transistor BhD
Transistor BhD 15
bc 201 transistor
A 1908 transistor
SA 5881
eltec
R/transistor bc 813
|
PDF
|
5343 transistor
Abstract: 2SA1980M 2SC5343M transistor 5343
Text: 2SC5343M Semiconductor NPN Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980M Ordering Information
|
Original
|
2SC5343M
2SA1980M
O-92M
KST-I002-002
5343 transistor
2SA1980M
2SC5343M
transistor 5343
|
PDF
|
5343 transistor
Abstract: No abstract text available
Text: 2SC5343M Semiconductor NPN Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980M Ordering Information
|
Original
|
2SC5343M
2SA1980M
2SC5343M
O-92M
KST-I002-003
5343 transistor
|
PDF
|
SIPC03N60S5
Abstract: No abstract text available
Text: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5
|
Original
|
SIPC03N60S5
80mm2
5343N,
SIPC03N60S5
|
PDF
|
SIPC03N60S5
Abstract: No abstract text available
Text: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5
|
Original
|
SIPC03N60S5
80mm2
5343S,
SIPC03N60S5
|
PDF
|
5343 transistor
Abstract: 2SC5343M 2SA1980M transistor 5343
Text: 2SC5343M NPN Silicon Transistor Description PIN Connection • General small signal amplifier Features B C E • Low collector saturation voltage : VCE sat =0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980M TO-92M
|
Original
|
2SC5343M
2SA1980M
O-92M
KSD-T0B002-000
5343 transistor
2SC5343M
2SA1980M
transistor 5343
|
PDF
|
BUK954R4-40B
Abstract: BUK964R4-40B BUK9E4R4-40B S1021 S 12051
Text: BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
|
Original
|
BUK95/96/9E4R4-40B
OT404,
OT226
BUK954R4-40B
BUK964R4-40B
BUK9E4R4-40B
S1021
S 12051
|
PDF
|
Untitled
Abstract: No abstract text available
Text: microseui corp/power 27E D • tillSTSQ ÜDDGS31 T ■ PTC T -33-/3, TSA65520 Power Transistor Chip, NPN 55 A, 200 V, tf= 0.1 ps Planar Epitaxial Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils Applications:
|
OCR Scan
|
DDGS31
TSA65520
|
PDF
|
transistor 5609
Abstract: 5609 5609 transistor MJ411 CCC411 MJ410
Text: 6115950 M ÌCROSEMI CORP/POWER 0 2E DE DE IhllSTSO 00502 DDODSGa 3 D 7- J . CCC411 3.5 A, 300 V, NPN Power Transistor Chip •Triple Diffused, Glass Passivated Mesa TECHNOLOGY .150" 3.8mm ■Contact Metallization: Base and emitter-aluminum Collector (Al-Ti-Ni-Au)
|
OCR Scan
|
CCC411
emitter-10-mil
thickness-10
PTC410/MJ410
PTC411/MJ411
transistor 5609
5609
5609 transistor
MJ411
CCC411
MJ410
|
PDF
|
LM567 application note
Abstract: LM567 application LM567 lm567cn data IC LM567 lm567 schematic diagram RETS567X touch-tone decoder 05fo LM567CN
Text: LM567/LM567C Tone Decoder General Description The LM567 and LM567C are general purpose tone decoders designed to provide a saturated transistor switch to ground when an input signal is present within the passband. The circuit consists of an I and Q detector driven by a voltage
|
Original
|
LM567/LM567C
LM567
LM567C
LM567 application note
LM567 application
lm567cn data
IC LM567
lm567 schematic diagram
RETS567X
touch-tone decoder
05fo
LM567CN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 6115950 MICROSEMI C OR P/ PO WER oa Q2E 00522 D I - CCC2400 i»rr « T TECHNOLOGY 50 A, 600 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au ■ Assembly Recommendations:
|
OCR Scan
|
CCC2400
emitter-25-mil
thickness-12
PTC2400
300jj
|
PDF
|
LM567
Abstract: IC LM567 LM567 application note A 673 C2 transistor LM567 datasheet lm567 schematic diagram LM567CN datasheet LM567 lm567 applications LM567C
Text: LM567/LM567C Tone Decoder General Description The LM567 and LM567C are general purpose tone decoders designed to provide a saturated transistor switch to ground when an input signal is present within the passband. The circuit consists of an I and Q detector driven by a voltage
|
Original
|
LM567/LM567C
LM567
LM567C
CSP-9-111C2)
CSP-9-111S2)
CSP-9-111S2.
IC LM567
LM567 application note
A 673 C2 transistor
LM567 datasheet
lm567 schematic diagram
LM567CN
datasheet LM567
lm567 applications
|
PDF
|
Untitled
Abstract: No abstract text available
Text: '6115950 MICROSEMI CORP/ POWER 02E 'oh D T '3 3 - Z ? 00519 D lf| b l l i ^ S D QDOOSn CCC10023 'P T C TECHNOLOGY 40 A, 600 V, NPN Darlington Power Transistor Chip • Epitaxial Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum
|
OCR Scan
|
CCC10023
emitter-25-mil
PTC10022/MJ10022
PTC10023/MJ10023
|
PDF
|
|
|
RETS567X
Abstract: IC LM567 LM567 PLL LM567CH lm567
Text: LM567/LM567C October 13, 2011 Tone Decoder General Description The LM567 and LM567C are general purpose tone decoders designed to provide a saturated transistor switch to ground when an input signal is present within the passband. The circuit consists of an I and Q detector driven by a voltage
|
Original
|
LM567/LM567C
LM567
LM567C
RETS567X
IC LM567
LM567 PLL
LM567CH
|
PDF
|
photo sensor s4810
Abstract: No abstract text available
Text: Low-voltage operation photo IC S4810-100 Operation at low voltage from 2.2 V The S4810-100 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.
|
Original
|
S4810-100
S4810-100
SE-171
KPIC1072E03
photo sensor s4810
|
PDF
|
photo sensor s4810
Abstract: No abstract text available
Text: PHOTO IC Low-voltage operation photo IC S4810, S6289 Operation at low voltage from 2.2 V S4810 and S6289 are digital output photo ICs consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.
|
Original
|
S4810,
S6289
S4810
S6289
S4810:
S6289:
SE-171
KPIC1005E06
photo sensor s4810
|
PDF
|
S4810
Abstract: S6289 photo sensor s4810
Text: PHOTO IC Low-voltage operation photo IC S4810, S6289 Operation at low voltage from 2.2 V S4810 and S6289 are digital output photo ICs consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.
|
Original
|
S4810,
S6289
S4810
S6289
S4810:
S6289:
SE-171
KPIC1005E04
photo sensor s4810
|
PDF
|
TO-204aa MICROSEMI PACKAGE OUTLINE
Abstract: Solenoid Drivers high voltage fast switching npn transistor 5609 transistor PTC16018 "Solenoid Drivers" 16018
Text: bllSTSO 00D045t. 2 I ' T - 3 3 ,'IS D PTC 16018 1.5KV Powermode Transistor i: 'i- ' " ' i r L* ' ' - ’ ’r • •• i S ' i: - " .- • - FEATURES APPLICATIONS • • • • • • • • • High Voltage Rating 1500 Volts High Current Rating 10 Amperes
|
OCR Scan
|
000042t.
TO-204aa MICROSEMI PACKAGE OUTLINE
Solenoid Drivers
high voltage fast switching npn transistor
5609 transistor
PTC16018
"Solenoid Drivers"
16018
|
PDF
|
S4810
Abstract: hl 05
Text: Low-voltage operation photo IC S4810-100 Operation at low voltage from 2.2 V The S4810-100 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.
|
Original
|
S4810-100
S4810-100
SE-171
KPIC1072E02
S4810
hl 05
|
PDF
|
5609
Abstract: 5609 transistor TSA55565
Text: m M5E i> bllSISO 00G0552 S7M « P T C MICROSEMI CORP/POUER TSA55565 Power Transistor Chip, NPN 55 A, 650 V, tf = 0.1 jis • Planar Epitaxial ■ Coniaci Metallization: ■ Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils M Applications:
|
OCR Scan
|
00G0552
TSA55565
5609
5609 transistor
TSA55565
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSB504100 Power Transistor Chip, NPN 4 A, 1000 V, tf = 40 ns TECHNOLOGY • Planar Epitaxial ■ Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils ■ Applications: 126 mil "B'BASB BONDING AREA: ■B'EMITTER SONDINO ARBA¡ 16 *33 mil»
|
OCR Scan
|
TSB504100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC5343M NPN Silicon Transistor Description PIN Connection • General sm all signal am plifier Features B C E • Low collect or sat urat ion volt age : VCE sat = 0.25V( Max.) • Low out put capacit ance : Cob = 2pF( Typ.) • Com plem ent ary pair wit h 2SA1980M
|
Original
|
2SC5343M
2SA1980M
O-92M
KSD-T0B002-000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 6115950 MICROSEMI 02E 00 51 7 CORP/POWER DE I □E ^115^50 D -T-3 3 - 2 9 □□□□517 CCC10021 TPXC TECHNOLOGY 60 A, 350 V, NPN Darlington Power Transistor Chip • Epitaxial Diffused, Glass Passivated n ■ Contact Metallization: Base and emitter-aluminum
|
OCR Scan
|
CCC10021
emitter-25-mil
thickness-18
PTC10020/M
PTC10021/MJ10021
300ns,
|
PDF
|
