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    TSB504100 Datasheets (1)

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    TSB504100 PTC Technology Power Transistor Chip, NPN Scan PDF

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    5609 transistor

    Abstract: TSB504100
    Text: 45E D m bllS^SO □□□□Sbl 567 H P T C tllCROSEMI CORP/POWER TSB504100 TPTC TECHNOLOGY Power Transistor Chip, NPN 4 A, 1000 V, tf = 40 ns • Planar Epitaxial ■ Cornaci Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils


    OCR Scan     		TSB504100 16x33m 5609 transistor TSB504100 PDF

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    Abstract: No abstract text available
    Text: TSB504100 Power Transistor Chip, NPN 4 A, 1000 V, tf = 40 ns TECHNOLOGY • Planar Epitaxial ■ Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils ■ Applications: 126 mil "B'BASB BONDING AREA: ■B'EMITTER SONDINO ARBA¡ 16 *33 mil»


    OCR Scan     		TSB504100 PDF