Untitled
Abstract: No abstract text available
Text: 6115950 MICROSEMI 02E 00 51 7 CORP/POWER DE I □E ^115^50 D -T-3 3 - 2 9 □□□□517 CCC10021 TPXC TECHNOLOGY 60 A, 350 V, NPN Darlington Power Transistor Chip • Epitaxial Diffused, Glass Passivated n ■ Contact Metallization: Base and emitter-aluminum
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CCC10021
emitter-25-mil
thickness-18
PTC10020/M
PTC10021/MJ10021
300ns,
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Untitled
Abstract: No abstract text available
Text: 6115950 MI CRO SE MI 02E CORP/POWER □a 00516 D -r -3 3 -2 .9 D E l b l l S ^ S D 0 0 DD5 1 b 3 CCC10021A T X C J TECHNOLOGY 60 A, 350 V, NPN Darlington Power Transistor Chip • T riple Diffused, Glass Passivated ■ Contact M etallization: Base and em itter-alum inum
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OCR Scan
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PDF
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CCC10021A
itter-15-m
thickness-12
10020/M
J10021
10021/M
J10021
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