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    TRANSISTOR 500MHZ Search Results

    TRANSISTOR 500MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 500MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver


    Original     		PDF NTE346 NTE346 500MHz 50mAdc 12Vdc 175MHz 100mW,

    NTE346

    Abstract: npn 1W 40V to39
    Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver


    Original     		PDF NTE346 NTE346 500MHz 50mAdc 12Vdc 175MHz 100mW, npn 1W 40V to39

    IRL19

    Abstract: No abstract text available
    Text: T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an


    Original     		PDF T1L2003028-SP 500MHz 30watts 45Watts 500MHz-2GHz IRL19

    BFR91

    Abstract: TO50 transistor BFR91 transistor transistor BFR91 300MHZ 800MHZ TO50 package sot37 5v sot37 transistor ph 45
    Text: PLANETA BFR91 The RF Line NPN Silicon High-Frequency Transistor DESCRIPTION The BFR91 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. This small-signal plastic transistor offers superior quality and


    Original     		PDF BFR91 BFR91 KT-29 24max TO50 transistor BFR91 transistor transistor BFR91 300MHZ 800MHZ TO50 package sot37 5v sot37 transistor ph 45

    pHEMT transistor 360

    Abstract: powerband
    Text: T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Introduction The T1P2701012-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 3GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 10watts across


    Original     		PDF T1P2701012-SP 500MHz 10watts 15Watts 500MHz-2 pHEMT transistor 360 powerband

    RF POWER TRANSISTOR

    Abstract: T1P3002028-SP transistor jc 817
    Text: T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across


    Original     		PDF T1P3002028-SP 500MHz 20watts 26Watts 26Watt RF POWER TRANSISTOR transistor jc 817

    transistor 746

    Abstract: No abstract text available
    Text: T1P3003028-SP 30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across


    Original     		PDF T1P3003028-SP 500MHz 30watts 40Watts 40Watt transistor 746

    pHEMT transistor 360

    Abstract: "RF Power Transistor" T1P3005028-SP
    Text: T1P3005028-SP 50 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3005028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 50watts across


    Original     		PDF T1P3005028-SP T1P3005028-SP 500MHz 50watts 65Watts 65Watt pHEMT transistor 360 "RF Power Transistor"

    transistor ZO 103 MA

    Abstract: zo 103 ma ZO 103 BPT25C01 transistor ZO 103 TRANSISTOR L 043 A transistor c3 POWER TRANSISTOR 1 WATT 2.4 GHZ oscillaor
    Text: BIPOLARICS, INC. Part Number BPT25C01 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT25C01 is a high performance silicon bipolar transistor intended for use in


    Original     		PDF BPT25C01 BPT25C01 500MHz) transistor ZO 103 MA zo 103 ma ZO 103 transistor ZO 103 TRANSISTOR L 043 A transistor c3 POWER TRANSISTOR 1 WATT 2.4 GHZ oscillaor

    zo 103 ma

    Abstract: transistor ZO 103 MA transistor ZO 103 ZO 103 BPT24C01 TRANSISTOR L 043 A
    Text: BIPOLARICS, INC. Part Number BPT24C01 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT24C01 is a high performance silicon bipolar transistor intended for use in


    Original     		PDF BPT24C01 BPT24C01 500MHz) zo 103 ma transistor ZO 103 MA transistor ZO 103 ZO 103 TRANSISTOR L 043 A

    transistor ZO 103 MA

    Abstract: zo 103 ma BPT23C01 ZO 103 POWER TRANSISTOR 1 WATT 2.4 GHZ
    Text: BIPOLARICS, INC. Part Number BPT23C01 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT23C01 is a high performance silicon bipolar transistor intended for use in


    Original     		PDF BPT23C01 BPT23C01 500MHz) transistor ZO 103 MA zo 103 ma ZO 103 POWER TRANSISTOR 1 WATT 2.4 GHZ

    BPT23C02

    Abstract: transistor 200 watt 28 v 0-30 mhz 30GHz transistor
    Text: BIPOLARICS, INC. Part Number BPT23C02 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT23C02 is a high performance silicon bipolar transistor intended for use in


    Original     		PDF BPT23C02 BPT23C02 transistor 200 watt 28 v 0-30 mhz 30GHz transistor

    SOT-23 AAAA

    Abstract: 276-116 BFQ67W BFQ67 BFQ67R SOT-23 marking 717 SOT-23 AAAA transistor
    Text: BFQ67/BFQ67R/BFQ67W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated


    Original     		PDF BFQ67/BFQ67R/BFQ67W BFQ67 BFQ67R BFQ67W D-74025 20-Jan-99 SOT-23 AAAA 276-116 SOT-23 marking 717 SOT-23 AAAA transistor

    2N918 semelab

    Abstract: No abstract text available
    Text: SEME 2N918CSM LAB GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		PDF 2N918CSM 2N918C" 2N918CSM 2N918CSM-JQR-B 600MHz 2N918 semelab

    INTERSIL AN5296

    Abstract: C - 4834 transistor an5296 AN5296 Application of the CA3018 AN5296 application note "Application of the CA3018" AN5296 Application note CA3018 Application note CA3086 CA3086 "an5296 Application of the CA3018"
    Text: CA3086 General Purpose NPN Transistor Array May 2001 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN


    Original     		PDF CA3086 120MHz CA3086 190MHz AN5296 CA3018 INTERSIL AN5296 C - 4834 transistor an5296 AN5296 Application of the CA3018 AN5296 application note "Application of the CA3018" AN5296 Application note CA3018 Application note CA3086 "an5296 Application of the CA3018"

    2n918 transistor SOT23

    Abstract: 2N918 2N918CSM
    Text: SEME 2N918CSM LAB GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		PDF 2N918CSM 100MHz 140kHz 60MHz 500MHz 200MHz 2n918 transistor SOT23 2N918 2N918CSM

    an5296

    Abstract: CA3086 "an5296 Application of the CA3018" "Application of the CA3018" AN5296 application note AN5296 Application note CA3018 CA3086M AN5296 Application of the CA3018 CA3018 CA3086F
    Text: CA3086 General Purpose NPN Transistor Array November 1996 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN


    Original     		PDF CA3086 120MHz CA3086 190MHz AN5296 CA3018 an5296 "an5296 Application of the CA3018" "Application of the CA3018" AN5296 application note AN5296 Application note CA3018 CA3086M AN5296 Application of the CA3018 CA3086F

    7500 IC 14 PIN

    Abstract: 14 IC ic 7500
    Text: 2N2857.02SML MECHANICAL DATA Dimensions in mm inches NPN RF SMALL SIGNAL TRANSISTOR 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON NPN TRANSISTOR APPLICATIONS:


    Original     		PDF 2N2857 02SML 500MHz 7500 IC 14 PIN 14 IC ic 7500

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


    Original     		PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    BFR92A

    Abstract: bfr92
    Text: SMALL SIGNAL NPN RF TRANSISTOR BFR92, BFR92A • Silicon Planar Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Suitable For UHF Applications Up To 1.0GHz • Space Level and High-Reliability Screening Options Available


    Original     		PDF BFR92, BFR92A 250mW BFR92AC1B-JQRS BFR92A bfr92

    transistor 495

    Abstract: 2N2857
    Text: 2N2857 MECHANICAL DATA Dimensions in mm inches NPN TRANSISTOR 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) FEATURES 12.7 (0.500) min. • SILICON NPN TRANSISTOR 0.48 (0.019) 0.41 (0.016) dia. APPLICATIONS: • AMPLIFIER, OSCILLATOR AND


    Original     		PDF 2N2857 500MHz 200mW 450MHz transistor 495 2N2857

    transistor B 764

    Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030
    Text: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.


    OCR Scan     		PDF T1P3002028-SP T1P3002028-SP 500MHz 30watts transistor B 764 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 powerband N4030

    transistor B 764

    Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838
    Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.


    OCR Scan     		PDF T1P3003028-SP T1P3003028-SP 500MHz 30watts transistor B 764 P1D8 179502 P3003 012673 0823838

    IC 1709 CN

    Abstract: 2SC5226 2SC5245 FH202 TS4162 ZS12 S21C TA-1708 D054471
    Text: Ordering number:ENN6220 N PN Epitaxial Planar Silicon Composite Transistor FH202 SAÊÊYOI VCO OSC Circuit Applications Features Package Dimensions •Composite type with a buffer transistor 2SC5226 and a oscillator transistors (TS4162) contained in the


    OCR Scan     		PDF ENN6220 FH202 2SC5226) TS4162) FH202 2SC5245 TS4162, FH202] IS12I IC 1709 CN 2SC5226 TS4162 ZS12 S21C TA-1708 D054471