TRANSISTOR 500MHZ Search Results

TRANSISTOR 500MHZ Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 500MHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver	Original	NTE346 NTE346 500MHz 50mAdc 12Vdc 175MHz 100mW,	PDF
NTE346 Abstract: npn 1W 40V to39 Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver	Original	NTE346 NTE346 500MHz 50mAdc 12Vdc 175MHz 100mW, npn 1W 40V to39	PDF
IRL19 Abstract: No abstract text available Text: T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an	Original	T1L2003028-SP 500MHz 30watts 45Watts 500MHz-2GHz IRL19	PDF
BFR91 Abstract: TO50 transistor BFR91 transistor transistor BFR91 300MHZ 800MHZ TO50 package sot37 5v sot37 transistor ph 45 Text: PLANETA BFR91 The RF Line NPN Silicon High-Frequency Transistor DESCRIPTION The BFR91 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. This small-signal plastic transistor offers superior quality and	Original	BFR91 BFR91 KT-29 24max TO50 transistor BFR91 transistor transistor BFR91 300MHZ 800MHZ TO50 package sot37 5v sot37 transistor ph 45	PDF
pHEMT transistor 360 Abstract: powerband Text: T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Introduction The T1P2701012-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 3GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 10watts across	Original	T1P2701012-SP 500MHz 10watts 15Watts 500MHz-2 pHEMT transistor 360 powerband	PDF
RF POWER TRANSISTOR Abstract: T1P3002028-SP transistor jc 817 Text: T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across	Original	T1P3002028-SP 500MHz 20watts 26Watts 26Watt RF POWER TRANSISTOR transistor jc 817	PDF
transistor 746 Abstract: No abstract text available Text: T1P3003028-SP 30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across	Original	T1P3003028-SP 500MHz 30watts 40Watts 40Watt transistor 746	PDF
pHEMT transistor 360 Abstract: "RF Power Transistor" T1P3005028-SP Text: T1P3005028-SP 50 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3005028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 50watts across	Original	T1P3005028-SP T1P3005028-SP 500MHz 50watts 65Watts 65Watt pHEMT transistor 360 "RF Power Transistor"	PDF
transistor ZO 103 MA Abstract: zo 103 ma ZO 103 BPT25C01 transistor ZO 103 TRANSISTOR L 043 A transistor c3 POWER TRANSISTOR 1 WATT 2.4 GHZ oscillaor Text: BIPOLARICS, INC. Part Number BPT25C01 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT25C01 is a high performance silicon bipolar transistor intended for use in	Original	BPT25C01 BPT25C01 500MHz) transistor ZO 103 MA zo 103 ma ZO 103 transistor ZO 103 TRANSISTOR L 043 A transistor c3 POWER TRANSISTOR 1 WATT 2.4 GHZ oscillaor	PDF
zo 103 ma Abstract: transistor ZO 103 MA transistor ZO 103 ZO 103 BPT24C01 TRANSISTOR L 043 A Text: BIPOLARICS, INC. Part Number BPT24C01 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT24C01 is a high performance silicon bipolar transistor intended for use in	Original	BPT24C01 BPT24C01 500MHz) zo 103 ma transistor ZO 103 MA transistor ZO 103 ZO 103 TRANSISTOR L 043 A	PDF
transistor ZO 103 MA Abstract: zo 103 ma BPT23C01 ZO 103 POWER TRANSISTOR 1 WATT 2.4 GHZ Text: BIPOLARICS, INC. Part Number BPT23C01 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT23C01 is a high performance silicon bipolar transistor intended for use in	Original	BPT23C01 BPT23C01 500MHz) transistor ZO 103 MA zo 103 ma ZO 103 POWER TRANSISTOR 1 WATT 2.4 GHZ	PDF
BPT23C02 Abstract: transistor 200 watt 28 v 0-30 mhz 30GHz transistor Text: BIPOLARICS, INC. Part Number BPT23C02 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT23C02 is a high performance silicon bipolar transistor intended for use in	Original	BPT23C02 BPT23C02 transistor 200 watt 28 v 0-30 mhz 30GHz transistor	PDF
SOT-23 AAAA Abstract: 276-116 BFQ67W BFQ67 BFQ67R SOT-23 marking 717 SOT-23 AAAA transistor Text: BFQ67/BFQ67R/BFQ67W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated	Original	BFQ67/BFQ67R/BFQ67W BFQ67 BFQ67R BFQ67W D-74025 20-Jan-99 SOT-23 AAAA 276-116 SOT-23 marking 717 SOT-23 AAAA transistor	PDF
2N918 semelab Abstract: No abstract text available Text: SEME 2N918CSM LAB GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.	Original	2N918CSM 2N918C" 2N918CSM 2N918CSM-JQR-B 600MHz 2N918 semelab	PDF

INTERSIL AN5296 Abstract: C - 4834 transistor an5296 AN5296 Application of the CA3018 AN5296 application note "Application of the CA3018" AN5296 Application note CA3018 Application note CA3086 CA3086 "an5296 Application of the CA3018" Text: CA3086 General Purpose NPN Transistor Array May 2001 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN	Original	CA3086 120MHz CA3086 190MHz AN5296 CA3018 INTERSIL AN5296 C - 4834 transistor an5296 AN5296 Application of the CA3018 AN5296 application note "Application of the CA3018" AN5296 Application note CA3018 Application note CA3086 "an5296 Application of the CA3018"	PDF
2n918 transistor SOT23 Abstract: 2N918 2N918CSM Text: SEME 2N918CSM LAB GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.	Original	2N918CSM 100MHz 140kHz 60MHz 500MHz 200MHz 2n918 transistor SOT23 2N918 2N918CSM	PDF
an5296 Abstract: CA3086 "an5296 Application of the CA3018" "Application of the CA3018" AN5296 application note AN5296 Application note CA3018 CA3086M AN5296 Application of the CA3018 CA3018 CA3086F Text: CA3086 General Purpose NPN Transistor Array November 1996 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN	Original	CA3086 120MHz CA3086 190MHz AN5296 CA3018 an5296 "an5296 Application of the CA3018" "Application of the CA3018" AN5296 application note AN5296 Application note CA3018 CA3086M AN5296 Application of the CA3018 CA3086F	PDF
7500 IC 14 PIN Abstract: 14 IC ic 7500 Text: 2N2857.02SML MECHANICAL DATA Dimensions in mm inches NPN RF SMALL SIGNAL TRANSISTOR 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON NPN TRANSISTOR APPLICATIONS:	Original	2N2857 02SML 500MHz 7500 IC 14 PIN 14 IC ic 7500	PDF
MRF660 Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040	Original	2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet	PDF
BFR92A Abstract: bfr92 Text: SMALL SIGNAL NPN RF TRANSISTOR BFR92, BFR92A • Silicon Planar Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Suitable For UHF Applications Up To 1.0GHz • Space Level and High-Reliability Screening Options Available	Original	BFR92, BFR92A 250mW BFR92AC1B-JQRS BFR92A bfr92	PDF
transistor 495 Abstract: 2N2857 Text: 2N2857 MECHANICAL DATA Dimensions in mm inches NPN TRANSISTOR 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) FEATURES 12.7 (0.500) min. • SILICON NPN TRANSISTOR 0.48 (0.019) 0.41 (0.016) dia. APPLICATIONS: • AMPLIFIER, OSCILLATOR AND	Original	2N2857 500MHz 200mW 450MHz transistor 495 2N2857	PDF
transistor B 764 Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030 Text: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.	OCR Scan	T1P3002028-SP T1P3002028-SP 500MHz 30watts transistor B 764 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 powerband N4030	PDF
transistor B 764 Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838 Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.	OCR Scan	T1P3003028-SP T1P3003028-SP 500MHz 30watts transistor B 764 P1D8 179502 P3003 012673 0823838	PDF
IC 1709 CN Abstract: 2SC5226 2SC5245 FH202 TS4162 ZS12 S21C TA-1708 D054471 Text: Ordering number:ENN6220 N PN Epitaxial Planar Silicon Composite Transistor FH202 SAÊÊYOI VCO OSC Circuit Applications Features Package Dimensions •Composite type with a buffer transistor 2SC5226 and a oscillator transistors (TS4162) contained in the	OCR Scan	ENN6220 FH202 2SC5226) TS4162) FH202 2SC5245 TS4162, FH202] IS12I IC 1709 CN 2SC5226 TS4162 ZS12 S21C TA-1708 D054471	PDF

TRANSISTOR 500MHZ Search Results

TRANSISTOR 500MHZ Result Highlights (5)

TRANSISTOR 500MHZ Datasheets Context Search

Untitled

NTE346

IRL19

BFR91

pHEMT transistor 360

RF POWER TRANSISTOR

transistor 746

pHEMT transistor 360

transistor ZO 103 MA

zo 103 ma

transistor ZO 103 MA

BPT23C02

SOT-23 AAAA

2N918 semelab

INTERSIL AN5296

2n918 transistor SOT23

an5296

7500 IC 14 PIN

MRF660

BFR92A

transistor 495

transistor B 764

transistor B 764

IC 1709 CN