GaN matching 100 watt
Abstract: GaN Bias 25 watt RF Transistor impedance matching
Text: Image Courtesy of U.S. Navy PowerBandTM – Redefining Wideband RF Technology What exactly is PowerBand ? PowerBand™ is a patent pending-technology developed by TriQuint that significantly increases the instantaneous bandwidth of a discrete high-power RF semiconductor transistor without any significant impact on efficiency or
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IRL19
Abstract: No abstract text available
Text: T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an
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T1L2003028-SP
500MHz
30watts
45Watts
500MHz-2GHz
IRL19
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RF POWER TRANSISTOR
Abstract: T1P3002028-SP transistor jc 817
Text: T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across
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T1P3002028-SP
500MHz
20watts
26Watts
26Watt
RF POWER TRANSISTOR
transistor jc 817
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move a block of data
Abstract: No abstract text available
Text: PRINTERS PIPELINE PowerBand* ASIC The PowerBand ASIC provides high speed data compression and real-time data decompression of continuous tone and binary images for printer applications. The device performs the following functions: • Compression of a Memory Block
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pHEMT transistor 360
Abstract: powerband
Text: T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Introduction The T1P2701012-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 3GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 10watts across
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T1P2701012-SP
500MHz
10watts
15Watts
500MHz-2
pHEMT transistor 360
powerband
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transistor 746
Abstract: No abstract text available
Text: T1P3003028-SP 30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across
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T1P3003028-SP
500MHz
30watts
40Watts
40Watt
transistor 746
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pHEMT transistor 360
Abstract: "RF Power Transistor" T1P3005028-SP
Text: T1P3005028-SP 50 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3005028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 50watts across
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T1P3005028-SP
T1P3005028-SP
500MHz
50watts
65Watts
65Watt
pHEMT transistor 360
"RF Power Transistor"
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T1G6003028-SP
Abstract: DC voltage meter how to test transistor sit transistor multimeter probes T1G6003028-SP datasheet
Text: How to test PowerBand Fixtures: TriQuint’s new PowerBand™ device family delivers high power performance across an exceptionally wide bandwidth while maintaining very high efficiency. Testing Environment: PowerBand™ fixtures are designed to be used in a 50 Ω environment. The input and output tapers rely on
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T1G6003028-SP:
T1G6003028-SP
DC voltage meter
how to test transistor
sit transistor
multimeter probes
T1G6003028-SP datasheet
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opa4458
Abstract: No abstract text available
Text: OPA445 SBOS156B − MARCH 1987 − REVISED APRIL 2008 High Voltage FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION D WIDE-POWER SUPPLY RANGE: D D D ±10V to ±45V HIGH SLEW RATE: 15V/µs LOW INPUT BIAS CURRENT: 10pA STANDARD-PINOUT TO-99, DIP, SO-8 PowerPAD, AND SO-8 SURFACE-MOUNT
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OPA445
SBOS156B
OPA445
opa4458
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800w audio Amplifier diagram
Abstract: BRIDGE-RECTIFIER 10v ,1A LM318 8112-AG7 BRIDGE-RECTIFIER 800w audio amplifier circuit diagram AUGAT 8112-AG7 four-lead LM12CLK BRIDGE-RECTIFIER operation
Text: LM12CL 80W Operational Amplifier General Description The LM12 is a power op amp capable of driving ± 25V at ± 10A while operating from ± 30V supplies. The monolithic IC can deliver 80W of sine wave power into a 4Ω load with 0.01% distortion. Power bandwidth is 60 kHz. Further, a
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LM12CL
800w audio Amplifier diagram
BRIDGE-RECTIFIER 10v ,1A
LM318
8112-AG7
BRIDGE-RECTIFIER
800w audio amplifier circuit diagram
AUGAT 8112-AG7
four-lead
LM12CLK
BRIDGE-RECTIFIER operation
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CRIMP CONTACTS
Abstract: No abstract text available
Text: Product Specification 108-1579 27Apr07 Rev B Sealed Circular Plastic Connector With Removable Crimp Contacts 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for Tyco Electronics sealed circular plastic connectors with removable crimp contacts. These connectors are designed for use in
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27Apr07
CRIMP CONTACTS
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transistor B 764
Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838
Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.
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T1P3003028-SP
T1P3003028-SP
500MHz
30watts
transistor B 764
P1D8
179502
P3003
012673
0823838
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T1P3005028-SP
Abstract: 50w transistor RF power transistor
Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3005028-SP 50W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction Table 1. M axim um Ratings Sym The T1P3005028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed
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T1P3005028-SP
T1P3005028-SP
500MHz
50watts
50w transistor
RF power transistor
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702005
Abstract: No abstract text available
Text: r 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 7 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 ALL RIGHTS RESERVED. D CORED C B 1. THIS HOUSING ACCEPTS 8 POWER SIZE 8, POWERBAND, OR COAXIAL SIZE 8 PIN CONTACTS. 2. DIMENSIONS A ANP 4805 REV 23FEB95
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23FEB95
amp40973
e/ssrv02Gd/dsk01/dept4023/amp40973/edmmod
702005
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Untitled
Abstract: No abstract text available
Text: Catalog 1 3 0 7 61 2 Power Contacts Revised 7-01 .125 POWERBAND Contacts, Crimp, Snap-In Material and Finish: Pin and Socket Connectors Contact— Copper Spring— Beryllium copper Plating Code A. 0.00508 [.000200] min. silver on contact area, 0.00127 [.000050] min. on
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TE 109-27
Abstract: No abstract text available
Text: AMP 108-1682 Product Specification 2 6 0 c t9 8 Rev A EC 0990-1232-98 Connector, Metrimate Power Drawer With Powerband Contacts 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the AMP* Metrimate power drawer
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20NOV96
TE 109-27
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Untitled
Abstract: No abstract text available
Text: CO RED -4 1 . 02± 0. 38 [1 , 6 T 5± , 01 5] 1. T H IS HOUSING A C C E PT S OR C O A X ]A L S I Z E 2. «^09?3 D IM E N S IO N S toi/itrvffid'*ka/*pU023/«p«9?3/«dMed 8 POWER S I Z E 0, 8 P I N CO NTACTS. IN BR A C K E TS ARE IN IN C H E S . POWERBAND,
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pU023/
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AMP crimper 69710-1
Abstract: BASE TOOL AMP crimper 69710-1 Instruction Sheet 408-2095 408-7424 AMP crimper 69710-1 408-2095 BASE TOOL AMP crimper 69710-1 manual RS-1019-5LP anvil crimp RS-1019-5L Amp 408-2095
Text: Instruction Sheet Crimping Die Assemblies 356611-1, 356611-2, and 356612-1 for POWERBAND* Contacts 408-4324 2 6 JA N 00 Rev a The contact support prevents the contact from bending during the crimping procedure. 3. CRIMPING PROCEDURE Install the die assembly in the tooling according to the
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transistor B 764
Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030
Text: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.
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T1P3002028-SP
T1P3002028-SP
500MHz
30watts
transistor B 764
952625
FCD50
74386
P1D8
pHEMT transistor 360
transistor di 960
powerband
N4030
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Amp 69710-1
Abstract: 58095-1 checking terminal crimp height 408-7424 69710-1 REV G 408-7424* figure 6 Amp 408-2095 HAND REMOVAL TOOLS AWG14-12 408-9816 crimp 408-7424
Text: AM P 3.18 [.125] POWERBAND* Contacts 11 MAR 97 Rev A All numerical values are in metric units [with U.S. customary units in brackets . Dimensions are in millimeters [and inchesj. Unless otherwise specified dimensions have a tolerance of ±0.13 [. 005] and angles have a tolerance of ±2°.
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Untitled
Abstract: No abstract text available
Text: TriQuint PüwERBAND SEMICONDUCTOR TM T 1L2003028-S P 30 W, 28V, 500 M H z -2 G Hz, P o w e r b a n d L D M O S RF P o w e r T r a n s is t o r Introduction T a ble 1. T h e rm a l C h a ra c te ris tic s Parameter The T1L2003028-SP is a POWERBAND™ discrete
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1L2003028-S
T1L2003028-SP
500MHz
30watts
45Watts
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TLE2141 equivalent
Abstract: No abstract text available
Text: TLE2141M, TLE2141AM, TLE2141Y EXCALIBUR LOW-NOISE HIGH-SPEED PRECISION OPERATIONAL AMPLIFIERS D3652, NOVEMBER 1990 - REVISED OCTOBER 1991 available features Low Noise: 10 Hz 1 kHz Low V|o •■■ 500 jiV Max at 25°C Single or Spilt Supply . . . 4 V to 44 V
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TLE2141M,
TLE2141AM,
TLE2141Y
D3652,
10000-pF
20-mA
TLE214IGNAL
TLE2141AM
TLE2141 equivalent
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Untitled
Abstract: No abstract text available
Text: 5 THIS DRAWING 13 UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. DIST LOC ALL RIGHTS RESERVED. FT REVISIONS LTR DESCRIPTION DWN DATE REVISED PER 0G3B-0428-02 APVD SS HW 7 /2 6 /0 2 NOTES: /t\ HOUSING: POLYESTER, UL94-V-0, BLACK; CONTACTS, PIN CONTACTS, BOARDLOCKS & EYELETS: BRASS.
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0G3B-0428-02
UL94-V-0,
00779të
MAR2000
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Untitled
Abstract: No abstract text available
Text: tlfCa — - Electronics 108-1579 P r0 d u c t . 19Dec01 RevA Specification e c 0990 - 1492-01 Sealed Circular Plastic Connector With Removable Crimp Contacts 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements fo r Tyco Electronics sealed
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19Dec01
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