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    TRANSISTOR 431 A Search Results

    TRANSISTOR 431 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 431 A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor w 431

    Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
    Text: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW


    OCR Scan     		PDF

    sd 431 transistor

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in


    OCR Scan     		bb53T31 PINNING-SOT186 BUK445-100A/B BUK445 -100A -100B K445-100A/B IE-02 1E-03 1E-04 sd 431 transistor PDF

    SLA6023 driver schematic

    Abstract: UDN2983A equivalent SMA4033 ULN2068LB STA431A STA458C UDN2580A udn darlington driver ic SLA4031 T02EB0
    Text: POWER & DISPLAY DRIVERS 431 THRU 458, 4310 THRU 4391, 5022 THRU 6030, AND 8001 BRIDGE AND HALF-BRIDGE TRANSISTOR ARRAYS Part Number STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA5022 SMA6010 SLA6012 SMA6014 SLA6020 SLA6022


    Original     		STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA6023 driver schematic UDN2983A equivalent SMA4033 ULN2068LB STA431A STA458C UDN2580A udn darlington driver ic SLA4031 T02EB0 PDF

    29Z3

    Abstract: Transistor CODE FR m7am
    Text: 55C D • SIEG flSBSbOS 000*431^ 1 BCY67 PNP Silicon PlanarTransistor SIEMENS AKTIENGESELLSCHAFT 04319 7^ O Z- 3 BCY 6 7 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistor is particularly provided


    OCR Scan     		BCY67 BCY67 29Z3 Transistor CODE FR m7am PDF

    2SA143

    Abstract: 2SA1431 2-7D101A
    Text: 2SA1431 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 431 Unit in mm STOROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • • High DC Current Gain and Excellent hEE Linearity : hFE(l) = 100-320 (VCe = -2 V , IC= -0.5A )


    OCR Scan     		2SA1431 2SA143 2SA1431 2-7D101A PDF

    BR1 400V

    Abstract: transistor AS 431 transistor 431 a 431 transistor 431 transistor 4-pin optoisolator transistor output transistor fb
    Text: MIC4043 Micrel MIC4043 Low-Voltage Secondary-Side Shunt Regulator General Description Features The MIC4043 is a shunt regulator optimized for secondaryside regulation in low-voltage power supplies. Featuring an output stage guaranteed to swing within 400mV of ground,


    Original     		MIC4043 MIC4043 400mV OT-143 BR1 400V transistor AS 431 transistor 431 a 431 transistor 431 transistor 4-pin optoisolator transistor output transistor fb PDF

    transistor AS 431

    Abstract: 2501 OPTO 2501 optoisolator 250v capacitor 33k 121k 1kv capacitor 33K 1kv capacitor a 431 transistor 431 transistor transistor 2A T1 2A 250V
    Text: MIC4043 Micrel MIC4043 Low-Voltage Secondary-Side Shunt Regulator Final Information General Description Features The MIC4043 is a shunt regulator optimized for secondaryside regulation in low-voltage power supplies. Featuring an output stage guaranteed to swing within 400mV of ground,


    Original     		MIC4043 MIC4043 400mV OT-143 transistor AS 431 2501 OPTO 2501 optoisolator 250v capacitor 33k 121k 1kv capacitor 33K 1kv capacitor a 431 transistor 431 transistor transistor 2A T1 2A 250V PDF

    400V voltage regulator

    Abstract: 10VC-12 transistor AS 431 431 TRANSISTOR equivalent
    Text: MIC4043 Micrel MIC4043 Low-Voltage Secondary-Side Shunt Regulator General Description Features The MIC4043 is a shunt regulator optimized for secondaryside regulation in low-voltage power supplies. Featuring an output stage guaranteed to swing within 400mV of ground,


    Original     		MIC4043 MIC4043 400mV OT-143 400V voltage regulator 10VC-12 transistor AS 431 431 TRANSISTOR equivalent PDF

    2501 OPTO

    Abstract: 2501 optoisolator 47uf 400v 33K 1kv transistor AS 431 431T 2501 OPTO ISOLATOR 4.7uF 400V 431 regulator transistor 431
    Text: MIC4043 Micrel MIC4043 Low-Voltage Secondary-Side Shunt Regulator General Description Features The MIC4043 is a shunt regulator optimized for secondaryside regulation in low-voltage power supplies. Featuring an output stage guaranteed to swing within 400mV of ground,


    Original     		MIC4043 MIC4043 400mV OT-143 2501 OPTO 2501 optoisolator 47uf 400v 33K 1kv transistor AS 431 431T 2501 OPTO ISOLATOR 4.7uF 400V 431 regulator transistor 431 PDF

    transistor w 431

    Abstract: a 431 transistor transistor 431 c n 431 transistor a 103 m Transistor y 431 transistor transistor 431 N transistor 431 Transistor Arrays transistor 431 a
    Text: CONTENTS [1 ] INDEX . 7 IFD FAM ILY TREE . TD/TB62 SERIES . TRANSISTOR ARRAY SELECTION GUIDE .


    OCR Scan     		TD/TB62 transistor w 431 a 431 transistor transistor 431 c n 431 transistor a 103 m Transistor y 431 transistor transistor 431 N transistor 431 Transistor Arrays transistor 431 a PDF

    Transistor PJ 431

    Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
    Text: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue


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    TRANSISTOR bH-16

    Abstract: BH-16 marking TRANSISTOR bH-10 bh16 transistor marking code 431 marking BH-10 bcp56-16t1g marking BH SOT-223 431 marking code sot BH-16 transistor
    Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.


    Original     		BCP56T1 OT-223 inch/1000 BCP56T3 inch/4000 100mA 250mA 500mA TRANSISTOR bH-16 BH-16 marking TRANSISTOR bH-10 bh16 transistor marking code 431 marking BH-10 bcp56-16t1g marking BH SOT-223 431 marking code sot BH-16 transistor PDF

    ZTX108B

    Abstract: ZR431 431 regulator 431 sot23 h a 431 transistor ic 431 ZR431Q1 capacitor c1 220uF 108B BAS21
    Text: Application Note 27 Issue 1 June 1996 ZR431 Application Note David Bradbury The ZR431 is an enhanced version of the industry standard 431. It is a three terminal shunt regulator giving excellent temperature stability and the capability of operating at currents from 50µA up


    Original     		ZR431 to100mA. 100nA, ZTX108B 431 regulator 431 sot23 h a 431 transistor ic 431 ZR431Q1 capacitor c1 220uF 108B BAS21 PDF

    cadstar pcb

    Abstract: cadstar shape synario cadstar ALLEGRO PART NUMBER INDEX
    Text: Synario ECS and Board Entry Index A Allegro Add symbol attributes . 3-38 Adding a netlister to a menu . 3-28, 3-41, 3-42 Allegro ECO Changes . 3-49


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    marking code AE SMD Transistor

    Abstract: smd transistor 2T transistor smd code marking 431 transistor 431 smd n1f smd national marking code 8 soic 431 TRANSISTOR smd lm431 transistor SMD 2t n1f sot23
    Text: LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range of operation. It is now available in a chip sized package 4-Bump micro SMD using National’s micro SMD package technology. The output voltage may be set at any level


    Original     		LM431 15-Aug00 AN-1112: 2-Sep-2000] marking code AE SMD Transistor smd transistor 2T transistor smd code marking 431 transistor 431 smd n1f smd national marking code 8 soic 431 TRANSISTOR smd transistor SMD 2t n1f sot23 PDF

    smd transistor 2T

    Abstract: transistor smd code marking 431 transistor 431 smd transistor smd marking 431 K TRANSISTOR SMD MARKING CODE 2t transistor smd marking 431 SMD TRANSISTOR MARKING 2T smd transistor A1 sot-23 TRANSISTOR SMD MARKING CODE 2.T 431 SMD SOT-23 CODE MARKING
    Text: LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range of operation. It is now available in a chip sized package 4-Bump micro SMD using National’s micro SMD package technology. The output voltage may be set at any level


    Original     		LM431 27AN-1112: 5-Aug-2002] smd transistor 2T transistor smd code marking 431 transistor 431 smd transistor smd marking 431 K TRANSISTOR SMD MARKING CODE 2t transistor smd marking 431 SMD TRANSISTOR MARKING 2T smd transistor A1 sot-23 TRANSISTOR SMD MARKING CODE 2.T 431 SMD SOT-23 CODE MARKING PDF

    marking 557 SOT143

    Abstract: No abstract text available
    Text: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor


    OCR Scan     		BCV63 BCV63B OT-143 BCV64. bbS3R31 0Q3M553 marking 557 SOT143 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 0033530 b88 Philips Semiconductors APX Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N AnER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL MAX. UNIT drain-source voltage


    OCR Scan     		bbS3T31 BSP122 OT223 PDF

    PH0810-35

    Abstract: Transistor c54 F1 J37 transistor 431 N cl 740
    Text: = an AMP - company Wireless Bipolar Power Transistor, 850 - 960 MHz 35W PH081 o-35 Features Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration


    Original     		PH081 53dBm PH0810-35 lN4245 PH0810-35 Transistor c54 F1 J37 transistor 431 N cl 740 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 0inE D ^53*131 0D1S5A7 □ RZB12250Y r- %-*>'- s' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.


    OCR Scan     		RZB12250Y 100ps; PDF

    buz349

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53T31 BUZ349 TQ218AA; bbS3131 T-39-13 b53131 D0147SQ buz349 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard ICs 6-channel high current driver BA664 The BA664 is an 1C with a built-in clamp diode, developed for the purpose of minimizing attachments, and contains a Darlington transistor array of six circuits with input resistance. Input and output are directed in the same direction


    OCR Scan     		BA664 BA664 100mA PDF

    S 170 MOSFET TRANSISTOR

    Abstract: transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950
    Text: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this


    Original     		CMT20N50 S 170 MOSFET TRANSISTOR transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 0D20bSD 7 SSE D N AUER PHILIPS/ DISCRE TE PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery


    OCR Scan     		0D20bSD BUK627-400A BUK627-400B BUK627 -400A T-39-H bS3T31 0020bS4 PDF