TRANSISTOR 40V Search Results

TRANSISTOR 40V Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 40V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
Untitled Abstract: No abstract text available Text: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A	Original	PDF	ZXTC4591AMC ZXTD4591AM832 D-81541
4420 Transistor Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748 Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.	Original	PDF	ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
MMBT3904LT1 Abstract: MMBT3906LT1 Text: MMBT3906LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 1 0.97Ref. PNP Epitaxial Silicon Transistor 0.38Ref. MINO.1 0.4 1.9 Collector-Emitter Voltage: V CEO =-40V 3 0.124±0.10 2 Collector Dissipation:Pc=225mW	Original	PDF	MMBT3906LT1 OT-23 OT-23 97Ref. 38Ref. 225mW MMBT3904LT1. -10mA 100MHz 300uS MMBT3904LT1 MMBT3906LT1
4420 Transistor Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23 Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.	Original	PDF	ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
ZETEX complementary transistor PRODUCT LINE Abstract: No abstract text available Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A	Original	PDF	ZXTC4591AMC ZXTD4591AM832 D-81541 ZETEX complementary transistor PRODUCT LINE
MMBT3904LT1 Abstract: MMBT3906LT1 Text: MMBT3904LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 1.9 Collector-Emitter Voltage: V CEO =40V 0.38Ref. MINO.1 0.124±0.10 2 Collector Dissipation:Pc=225mW	Original	PDF	MMBT3904LT1 OT-23 OT-23 97Ref. 38Ref. 225mW MMBT3906LT1. MMBT3904LT1 MMBT3906LT1
MMBT3904LT1 Abstract: MMBT3906LT1 Text: MMBT3906LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 3 0.97Ref. 1 PNP Epitaxial Silicon Transistor 0.4 1.9 Collector-Emitter Voltage: V CEO =-40V 0.38Ref. MINO.1 0.124±0.10 2 Collector Dissipation:Pc=225mW	Original	PDF	MMBT3906LT1 OT-23 OT-23 97Ref. 38Ref. 225mW MMBT3904LT1. MMBT3904LT1 MMBT3906LT1
MLP832 Abstract: ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 40V; RSAT = 195m ; C = 2.5A VCEO = -40V; RSAT = 350m ; C = -2A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,	Original	PDF	ZXTD4591AM832 MLP832 ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a
2SC5343 Abstract: No abstract text available Text: 2SC5343 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 1.3±0.2 1.9 Collector-Emitter Voltage: V CEO =40V 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 2 Collector Dissipation:Pc=225mW 0.5Ref. 0.38Ref. MINO.1 0.124±0.10 0.5Ref. 2.9±0.2 GENERAL PURPOSE TRANSISTOR	Original	PDF	2SC5343 OT-23 OT-23 97Ref. 225mW 38Ref. 100MHz 300uS 2SC5343
2SC5343 Abstract: No abstract text available Text: 2SC5343 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 1.9 Collector-Emitter Voltage: V CEO =40V 0.5Ref. 0.38Ref. MINO.1 0.01-0.10 Tolerance:0.1mm Marking 0.124±0.10 2 Collector Dissipation:Pc=225mW	Original	PDF	2SC5343 OT-23 OT-23 97Ref. 38Ref. 225mW 2SC5343
pnp npn dual emitter connected Abstract: ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A Description Packaged in the 3mm x 2mm MLP Micro Leaded	Original	PDF	ZXTD4591AM832 D-81541 pnp npn dual emitter connected ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA
STC2222 Abstract: No abstract text available Text: STC2222A NPN Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 40V • Collector Power Dissipation: PC max =625mW • Refer STC2222 for graphs TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	PDF	STC2222A 625mW STC2222
MARKING 91A NPN transistor Abstract: MARKING 91A DFN3020B-8 ZXTC4591AMC ZXTC4591AMCTA Text: A Product Line of Diodes Incorporated ZXTC4591AMC COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR Features Mechanical Data • • • • • • • • • • • • NPN Transistor VCEO = 40 RSAT = 195 mΩ IC = 2.5A PNP Transistor VCEO = -40V	Original	PDF	ZXTC4591AMC 500mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31925 MARKING 91A NPN transistor MARKING 91A DFN3020B-8 ZXTC4591AMC ZXTC4591AMCTA

on 222 transistor Abstract: 4503 ISAHAYA Diagrams Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN226AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN226AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=0.22kΩ,R2=2.2kΩ）	Original	PDF	RTGN226AP RTGN226AP on 222 transistor 4503 ISAHAYA Diagrams
Japanese Transistor Abstract: RTGN141AP RTGN141 rtgn14 Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN141AP PRELIMINARY TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN141AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=10kΩ,R2=10kΩ）	Original	PDF	RTGN141AP RTGN141AP Japanese Transistor RTGN141 rtgn14
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	PDF	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Japanese Transistor Abstract: R1047K 0.47k resistor rtgn426 Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN426AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN426AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=0.47kΩ,R2=4.7kΩ）	Original	PDF	RTGN426AP RTGN426AP Japanese Transistor R1047K 0.47k resistor rtgn426
RTGN234AP Abstract: rtgn234 Japanese Transistor isahaya transistor electronics Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN234AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN234AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=2.2kΩ,R2=10kΩ）	Original	PDF	RTGN234AP RTGN234AP rtgn234 Japanese Transistor isahaya transistor electronics
2N3904 Abstract: 2n3904 TRANSISTOR PNP 2n3904 transistor 2N3904, transistor 2N3904 plastic 22N3904 data sheet transistor 2n3906 03 transistor 2N3904 SOT-23 2N3904 transistor data sheet free download Text: 2N3904 TRANSISTOR NPN PRODUCT SUMMARY TO-92 Plastic-Encapsulate Transistors TO-92 FEATURES NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with	Original	PDF	2N3904 2N3906 OT-23 MMBT3904 2N3904 2n3904 TRANSISTOR PNP 2n3904 transistor 2N3904, transistor 2N3904 plastic 22N3904 data sheet transistor 2n3906 03 transistor 2N3904 SOT-23 2N3904 transistor data sheet free download
RTGN14BAP Abstract: 4503 swithing rtgn14 Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN14BAP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN14BAP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R2=10kΩ） ● High collector current IC=1A	Original	PDF	RTGN14BAP RTGN14BAP 4503 swithing rtgn14
RTGN432P Abstract: No abstract text available Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN432P TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN432P is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=4.7kΩ,R2=10kΩ） ● High collector current IC=1A	Original	PDF	RTGN432P RTGN432P
RTGN131AP Abstract: 4503 rtgn131 Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN131AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN131AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=1kΩ,R2=1kΩ） ● High collector current IC=1A	Original	PDF	RTGN131AP RTGN131AP 4503 rtgn131
transistor BUX Abstract: BUX14 TR07 Text: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection	OCR Scan	PDF	BUX14 CB-19 transistor BUX BUX14 TR07

TRANSISTOR 40V Search Results

TRANSISTOR 40V Result Highlights (5)

TRANSISTOR 40V Datasheets Context Search

MN1280

Untitled

4420 Transistor

MMBT3904LT1

4420 Transistor

ZETEX complementary transistor PRODUCT LINE

MMBT3904LT1

MMBT3904LT1

MLP832

2SC5343

2SC5343

pnp npn dual emitter connected

STC2222

MARKING 91A NPN transistor

on 222 transistor

Japanese Transistor

oz960

Japanese Transistor

RTGN234AP

2N3904

RTGN14BAP

RTGN432P

RTGN131AP

transistor BUX