BUK444
Abstract: BUK444-800A BUK444-800B YA11
Text: PHILIPS INTERNATIONAL fc.SE D • 7110fl2b DDt,3^fll 356 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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7110fl2b
BUK444-800A/B
OT186
BUK444
-800A
-800B
BUK444-800A
BUK444-800B
YA11
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • Low Saturation Voltage : VCE(sat) = - 0.32V (Typ.) (IC = - 500mA, IB = - 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C)
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2SA1356
500mA,
2SC3419
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2SA1356
Abstract: 2SC3419 2sc341 2SA135
Text: 2SA1356 TO SH IBA 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB = -50m A ) High Collector Power Dissipation : P 0 = 1.2W(Ta = 25°C)
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2SA1356
500mA,
2SC3419
2SA1356
2sc341
2SA135
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A1356 transistor
Abstract: A1356 2SA1356 2SC3419
Text: TOSHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS. • 8.3MAX. . 5.8 Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB =-50m A ) High Collector Power Dissipation : P0 = 1.2W(Ta = 25°C)
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2SA1356
500mA,
2SC3419
A1356 transistor
A1356
2SA1356
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TA2761
Abstract: indiana general ferrites RCA-40608 HP608D transistor v2w 40608 CM 40608 field strength meter RCA Solid State Power Transistor BALLANTINE
Text: File No. 356 [JUCBZTD ^ P o w e r T r a n s is to rs Solid State Division 40608 RCA-40608 is an ep itax ial silico n n-p-n p lan ar tra n s is tor. I t is e s p e c ia lly designed for operation a s a C la s s A, wide-band power am plifier in VHF circu its.
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RCA-40608
TA2761
100fi.
I237R2
92CS-22857
TA2761
indiana general ferrites
HP608D
transistor v2w
40608 CM
40608
field strength meter
RCA Solid State Power Transistor
BALLANTINE
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE ObE D bbS3T31 0DlS7Qfl =1 J BF550 V r - 3/-/5- SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.
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bbS3T31
BF550
bb53T31
DQ1S71Q
T-31-15
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BUZ211
Abstract: No abstract text available
Text: _ PowerMOS transistor_ BUZ211 N AMER PHILIPS/DISCRETE DbE D • _ _SL OOlMbbfl 7 ■ T-si-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. FREDFET* with fast-recovery reverse diode.
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BUZ211
T-si-13
bbS3131
D014b
T-39-13
BUZ211_
0014b74
BUZ211
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lf356 op-amp
Abstract: LF356 op-amp application FD200 diode 0.1 mF ceramic disc capacitor 271 Ceramic Disc Capacitors lf356 op-amp ic IC LF356 datasheet LF351 op-amp application Thomas M Frederiksen LF356 FET input op-amp
Text: National Semiconductor Application Note 447 Wanda Garrett July 1987 To use integrated circuits in real applications designers must know the limitations of the devices The majority of the limitations are published in the datasheets and these fall into two categories Absolute Maximums which if violated
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Untitled
Abstract: No abstract text available
Text: STTTbSS 0G0G424 T SLOTTED SWITCH 1ÛE D MARKTECH INTERNATIONAL MTSS8050 INFRARED LED+PHOTO TRANSISTOR • R s I J- APPLICATIONS •J t — • OPTICAL SWITCH • SHAFT POSITION AND VELOCITY SENSOR t • L l i J — -, , ■ FEATURES " TTp j RATING UNIT Forward Current
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0G0G424
MTSS8050
00006CH
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VEB mikroelektronik
Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Text: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP
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57AHNSDORP
VEB mikroelektronik
Mikroelektronik Information Applikation
mikroelektronik Heft 12
Radio Fernsehen Elektronik 1977 Heft 9
information applikation
information applikation mikroelektronik
mikroelektronik DDR
Halbleiterbauelemente DDR
aktive elektronische bauelemente ddr
mikroelektronik Heft
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Untitled
Abstract: No abstract text available
Text: GTR MODULE SILICON N CHANNEL IGBT MG50H1ZS1 HI GH POWER S W I T C H I N G APPLICATONS. M O T O R C O NT RO L A PP L IC ATIONS. . High Input Impedance . High Speed : tf= 1. Ous Max. t r r = 0 . 5/j s (Max. ) . Low Saturation Voltage : V C E (sat)=5.0V(Max.)
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MG50H1ZS1
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N03E
Abstract: HBC2500 USE OF TRANSISTOR AMP017 opamp 555 3-input xnor Analog Devices Opamp transistor 2955 AMP016 op-amp- 356
Text: HBC2500 H A R R IS S E M I C O N D U C T O R 3fim B iM O S-E A nalog/D igital Library February 1992 Features • Description Cost-Effective 3 Micron BiCMOS Technology Integrates Up to 2000 Gates and 100 Op Amps HBC2500 is a mixed-signal analog and digital BICMOS
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HBC2500
HBC2500
N03E
USE OF TRANSISTOR
AMP017
opamp 555
3-input xnor
Analog Devices Opamp
transistor 2955
AMP016
op-amp- 356
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220vac LED driver
Abstract: No abstract text available
Text: S7E J> 3UALITY TECHNOLOGIES CORP 7 4 b b fl5 1 0004300 0 3fl « Ü T Y European “Pro Electron” Registered T y p e s _ CNY30, CNY34 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR —N 3 c 1 milliwatts milliamps volts TYP. MAX.
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CNY30,
CNY34
CNY30
CNY34
220VAC
220vac LED driver
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optocoupler 357
Abstract: No abstract text available
Text: SL5504 J V O PTO C O U PLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable for TTL integrated circuits Features • High output/input DC current transfer ratio
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SL5504
bbS3T31
QD35S64
optocoupler 357
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8L AA
Abstract: 9v smd transistor smd 4401 NPN Switching Transistor 10MW CS2516 pulse stretcher circuit diagram smd transistor 8L stretcher pulse stretcher circuit ct 60 transistor
Text: CS2516 CS2516 Pulse-Load Battery Monitor Description The CS2516 is designed for use in battery powered medical, security, or environmental systems where prior notification of impending power source failure is a requirement. The IC effectively provides continuous monitoring of battery condition by pulsesampling the system voltage at predetermined intervals. Low standby current permits unswitched connection to
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CS2516
CS2516
MS-001
CS2516KN8
CS2516KD8
CS2516KDR8
8L AA
9v smd transistor
smd 4401 NPN Switching Transistor
10MW
pulse stretcher circuit diagram
smd transistor 8L
stretcher
pulse stretcher circuit
ct 60 transistor
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CS8127
Abstract: CS8127YD8 CS8127YDR8 MS-001 TIP42 TIP42B
Text: CS8127 CS8127 5V Linear Controller/Driver Features Description lead allows remote sensing of the output voltage for improved regulation. The CS8127 contains all the necessary control circuitry to implement a 5V linear regulator. An external pass device is
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CS8127
CS8127
TIP42
100mV
500mA,
350mV
500mA
CS8127YD8
CS8127YDR8
MS-001
TIP42
TIP42B
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D03V power IC
Abstract: CS8127 MS-001 TIP42 TIP42B 47W surface mount transistor high voltage SMD transistor
Text: CS8127 CS8127 5V Linear Controller/Driver Features Description lead allows remote sensing of the output voltage for improved regulation. The CS8127 contains all the necessary control circuitry to implement a 5V linear regulator. An external pass device is
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CS8127
CS8127
TIP42
100mV
500mA,
350mV
500mA
D03V power IC
MS-001
TIP42
TIP42B
47W surface mount transistor
high voltage SMD transistor
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D • bbSB'iai QQEfiTfiS IEE B LV33 _ J \ _ V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers for television
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BLV33
BLV33
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Untitled
Abstract: No abstract text available
Text: PHP52N06T N-channel enhancement mode field-effect transistor Rev. 01 — 9 January 2002 Product data M3D307 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHP52N06T in SOT78 TO-220AB .
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PHP52N06T
M3D307
PHP52N06T
O-220AB)
MBB076
MBK106
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MG100M2CK1
Abstract: No abstract text available
Text: TD TOSHIBA -CDISCRETE/0PT03- 9097250 TOSHIBA DISCRETE/OPTO D Ë Ï T O T O S O ODlbBMS 1 90D 16345 Ü B SEMICONDUCTOR Dp-33-35- TOSHIBA G-TR MODULE M G I 0 0 M 2 C K 1 SILICON NPN TRIPLE DIFFUSED TYPE J U S TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.
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-CDISCRETE/0PT03-
Dp-33-35-
Collector-25
EGA-MG100M2CK1-4
-CDISCRETE/0PT03r~
DDltj34T
lb35Q
MG100M2CK1
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47W surface mount transistor
Abstract: No abstract text available
Text: CS8127 CS8127 5V Linear Controller/Driver Features Description lead allows remote sensing of the output voltage for improved regulation. The CS8127 contains all the necessary control circuitry to implement a 5V linear regulator. An external pass device is
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CS8127
CS8127
TIP42
100mV
500mA,
350mV
500mA
47W surface mount transistor
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Untitled
Abstract: No abstract text available
Text: CS8127 CS8127 5V Linear Controller/Driver Features Description lead allows remote sensing of the output voltage for improved regulation. The CS8127 contains all the necessary control circuitry to implement a 5V linear regulator. An external pass device is
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CS8127
CS8127
TIP42
100mV
500mA,
350mV
500mA
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smd transistor tip42
Abstract: No abstract text available
Text: CS8128 CS8128 5V Linear Controller/Driver Features Description The CS8128 contains all the necessary control circuitry to implement a 5V linear regulator. An external pass device is used to produce superior performance compared to conventional monolithic regulators. The CS8128 with a TIP42
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CS8128
CS8128
TIP42
100mV
500mA,
350mV
500mA
smd transistor tip42
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tip42 smd
Abstract: CS8128 CS8128YD8 CS8128YDR8 CS8128YN8 MS-001 TIP42 TIP42B scr 1amp
Text: CS8128 CS8128 5V Linear Controller/Driver Features Description The CS8128 contains all the necessary control circuitry to implement a 5V linear regulator. An external pass device is used to produce superior performance compared to conventional monolithic regulators. The CS8128 with a TIP42
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CS8128
CS8128
TIP42
100mV
500mA,
350mV
500mA
tip42 smd
CS8128YD8
CS8128YDR8
CS8128YN8
MS-001
TIP42
TIP42B
scr 1amp
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