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    TRANSISTOR 2SK161 Search Results

    TRANSISTOR 2SK161 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SK161 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK161

    Abstract: 2SK161GR 2SK1615 TOSHIBA 2SK161 2SK161Y 2sk161 transistor 2SK1614 dsa0049037 transistor 2sk161
    Text: 2SK161 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK161 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB typ. (f = 100 MHz) • High forward transfer admittance: |Yfs| = 9 mS (typ.) •


    Original     		PDF 2SK161 2SK161 2SK161GR 2SK1615 TOSHIBA 2SK161 2SK161Y 2sk161 transistor 2SK1614 dsa0049037 transistor 2sk161

    2SK1615

    Abstract: 2SK161
    Text: 2SK161 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK161 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB typ. (f = 100 MHz) • High forward transfer admittance: |Yfs| = 9 mS (typ.) •


    Original     		PDF 2SK161 2SK1615 2SK161

    2SK161

    Abstract: 2SK161GR 2SK1615 2SK161Y
    Text: 2SK161 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK161 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB typ. (f = 100 MHz) · High forward transfer admittance: |Yfs| = 9 mS (typ.) · Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)


    Original     		PDF 2SK161 2SK161 2SK161GR 2SK1615 2SK161Y

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original     		PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS Unit in mm — NF = 2.5dB Typ. (f = 100MHz) Low Noise Figure • High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan     		PDF 2SK161 100MHz) 55MAX

    2sk161

    Abstract: TOSHIBA 2SK161
    Text: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS — NF = 2.5dB Typ. (f = 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.) Extremely Low Reverse Transfer Capacitance


    OCR Scan     		PDF 2SK161 100MHz) 55MAX 2sk161 TOSHIBA 2SK161

    2sk161

    Abstract: 2SK1619
    Text: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR 9 <; SILICON N CHANNEL JUNCTION TYPE 1 fi 1 k Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 4.2MAX. : NF = 2.5dB Typ. (f = 100MHz) Low Noise Figure • High Forward Transfer Admittance : |Yfs| =9m S (Typ.)


    OCR Scan     		PDF 2SK161 100MHz) 2sk161 2SK1619

    2SK161

    Abstract: TA2024 2SK1610 2SK161GR
    Text: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 4 .2 M A X . — 1 1 1 I 1 : NF = 2.5dB Typ. (f = 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan     		PDF 2SK161 100MHz) 2SK161 TA2024 2SK1610 2SK161GR

    2SK161

    Abstract: No abstract text available
    Text: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS 4 .2 M A X . • • • Low Noise Figure : NF = 2.5dB Typ. (f = 100 MHz) High Forward Transfer Admittance : |Yfs| = 9 mS (Typ.)


    OCR Scan     		PDF 2SK161 2SK161

    2SK161

    Abstract: TOSHIBA 2SK161
    Text: TO SH IBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS 4.2M AX. • • • Low Noise Figure : NF = 2.5dB Typ. (f = 100 MHz) High Forward Transfer Admittance : |Yfs| = 9 mS (Typ.)


    OCR Scan     		PDF 2SK161 2SK161 TOSHIBA 2SK161

    2SK161

    Abstract: 2SK161GR vI652
    Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK161 U nit in mm FM TU N ER A P P LIC A T IO N S . VH F B A N D A M P LIF IE R A PP LIC A T IO N S . Low Noise Figure • • : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan     		PDF 2SK161 100MHz) 2SK161 2SK161-0 2SK161-Y 2SK161-GR 2SK161GR vI652

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    2SC3378

    Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
    Text: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current


    OCR Scan     		PDF 2SC2458 2SA1048 2SC24S8 2SC2469 2SA1049 2SC2710 2SA1150 2SK367 2SK370 2SC3378 fet 2sK161 2SA1297 2SC2458 2SC2469 2SC2710 2SK184

    2SC3378

    Abstract: 25A1048
    Text: —3 O IA un H CO 3» 2. MINI PACKAGE SERIES rS fc > TRANSISTOR Application NPN PNP 2SC2458 General Purpose’* v CE sat) MAX. hFE Type No. I2SA1048 VCEO •c (V) M l PC ImW) VCE ic IV )' ‘ M ) (V) fjT Y P (MIN.) ■c 1 >B ImA) ImA) VCE (MHz), (V) O C/>


    OCR Scan     		PDF 2SC2458 I2SA1048 2SK365 2SK367 2SK370 2SK371 2SK372 2SC3378 25A1048

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


    OCR Scan     		PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297