2sk1060
Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
Text: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104
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2SK104
2SK105
2SK162
2SK163
2SK193
2SK195
2SK505
X10679EJCV0SG00
1996P
2sk1060
2SK type
transistor 2sk
transistor 2sk193
2SK105 Datasheet
transistor 2sk162
transistor SST 250
2SK1794
2SK104
2SK2234
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MOSFET TOSHIBA 2SK
Abstract: transistor 2sk equivalent 2sk2698 mosfet equivalent 2sk2837 mosfet MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET TOSHIBA 2Sj TO-3P package land pattern TPCS8201 toshiba lateral mos Transistor TOSHIBA 2SK
Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.
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transistor 2sk
Abstract: MOSFET TOSHIBA 2Sj equivalent 2sk2698 mosfet MOSFET TOSHIBA 2SK HIGH POWER MOSFET TOSHIBA equivalent 2sk2837 mosfet TE161 2SK2615 2SK2698 2SK2837
Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.
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2SK520
Abstract: k41 transistor transistor k41 transistor k42 marking k42 AM radio K447
Text: JUNCTION FIELD EFFECT TRANSISTOR 2SK 520 HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS in m illim » t» ri • Good for AM Radio Application • High I y,s I I yfs I = 17 mS TYP. 2 8 *0 -2
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2SK520
2SK520
k41 transistor
transistor k41
transistor k42
marking k42
AM radio
K447
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transistor 2sk
Abstract: transistor+2sk
Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2313 DATA SILICON N CHANNEL MOS TYPE L2-tt-M O SV (2SK 2313) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE
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2SK2313
100/j
2SK2313
398//H
transistor 2sk
transistor+2sk
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Untitled
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR TO SH IBA TECHNICAL 2 S K 1 489 DATA SILICON N CHANNEL MOS TYPE 7T- M O S II •5 (2SK 1489) INDUSTRIAL APPLICATIONS U n it in mm CHOPPER REGULATOR APPLICATIONS. HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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2SK1489
2SK1489-
2SK1489)
2SK1489
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2SK3127
Abstract: No abstract text available
Text: TO SH IBA 2SK 3127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 27 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance
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2SK3127
O-220FL
2SK3127
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L713
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} Ti 99D 16713 9097250 TOSHIBA CDISCRETE/OPTO ^osfiilx D E ^ T D T V B S O DD1 L713 14 D r - s î ' TOSHIBA FIELD EFFECT TRANSISTOR’ SEMICONDUCTOR I3 2SK 538 TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-M0S) INDUSTRIAL APPLICATIONS
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100nA
L713
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Transistor D 2599
Abstract: No abstract text available
Text: TO SH IB A 2SK 2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1. Low Drain-Sorce ON Resistance : R d S(ON = 2.9H (Typ.)
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2SK2599
100//A
Transistor D 2599
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC Tö DE | b4S7S2S OOlñññM T |~ B 8 4 D T - 3 ? - . : '¡^ 7 iïTap, - N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ^. y. 2SK703 D E S C R IP T IO N The 2SK 703 is N-Channel MOS Field Effect Power Transistor P A C K A G E D IM EN SIO N S
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2SK703
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transistor et 454
Abstract: 2sk542 DC-DC H14 F530 T108 T460
Text: mm & ma SEC M O S M nft& }£:s<r7 M O S Field Effect P o w er Transistor m = f= r l\T X 2SK542 N f t ^ /^ '° 7 - M O S FET x > r i i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK 542Ü , FET ^ J fiia /P A C K A G E DIMENSIONS
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2SK542
2SK542Ã
transistor et 454
2sk542
DC-DC H14
F530
T108
T460
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smd transistor 2f
Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
Text: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.
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Tap15
FTO-220
S10VB
S15VB
S15VBA
S25VB
S50VB
S10WB
S15WB
S20WB
smd transistor 2f
330 smd
transistor 2sk 168
K2663
smd TRANSISTOR code 2F
2SJ 162
m 147 smd transistor
s4vb 10 73
SMD CODE TRANSISTOR 2SK
smd transistor 1Z
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6315A
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR _ 2SK2484 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK 2484 is N - C h a n n e l M O S F ie ld E ffe c t T r a n s is to r d e PACKAGE DIMENSIONS in m i l l i m e t e r s
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2SK2484
6315A
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2SK2510
Abstract: Diode KD 521 a transistor DK qj diode sg 5 ts b 772 p
Text: h 7 > y X ? MOS Field Effect Transistor 2SK2510 FET iif f l 2SK 2510ßN 3l * * ; M t I ! / t 7 - M O S F E T T ', 7 « o 4y % m > f f l m . x t 0 R ds on 1 = 2 0 m û l ^ : ( @ V gs = 1 0 V , R ds (on) 2 = 3 0 m ( @ V gs = 4 V , Id = 2 0 A ) Id = 2 0 A )
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2SK2510
MP-45F
O-220)
2SK2510
Diode KD 521 a
transistor DK qj
diode sg 5 ts
b 772 p
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DIODE IN 4002 424
Abstract: transistor 2sk c954 2SK2541 TI 945 nec 501 t Transistor DF- RO
Text: =t — • 5 > 2 / - h MOS Field Effect Transistor 2SK2541 n ^ - v t ^ u m o s ¡ ü iâ x - 'f > y ^ < f e t 7 ' m 2SK 2541IÌ 1.5 V l E t t ^ 'f 7 “<7 N 51 + ^^iÉ M O S FET?'<feU, f£ 1 Œ ?'![*»)?' t , *'0 K 7 ' f 7 f S ? f l t 3 *s' * ^ o jg h 7 > v
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2SK2541
2SK2541
DIODE IN 4002 424
transistor 2sk
c954
TI 945
nec 501 t
Transistor DF- RO
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transistor 2sk
Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k
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2SD16
2SD1603
2SD1604
2SD1605
2SD1606
2SD1756
2SD1976
2SB1389
2SB1390
2SB1391
transistor 2sk
transistor sp-10 4ac14
2SK157
transistor 2sk 70
2sj318
transistor 2sk 12
2SK2851
4AC14
TRANSISTOR 2sK 135
K 2796
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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2SK150
Abstract: 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 SK 10 BAT 065
Text: 2 5 ,1 1 5 ' tJ n y n * v % i \ > m 8 i e w i m m ^ y v z & SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 2 5 ,1 2 - i 2 S K 15 ii it x o is « « « « * o 1 O D C , A C S S A * S !ttlE l« iffl O O ^ O X -1 7 f- •/
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2SK15)
2SK11)
2SK12,
3800iiu
3800/tU
2SK12
3SK15
2SK12)
10kfl)
2SK150
2SK12
2SK15
transistor 2sk
2SK120
2SK11
2SK12-Y
2SK150 A
2SK110
SK 10 BAT 065
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2SK1289
Abstract: MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1289 is N-channel MOS Field Effect Transistor
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2SK1289
2SK1289
IEI-1209)
MEI-1202
TEA-1035
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d2396
Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .
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2SK2503
RK7002
TC363TS
DTC314TS
TC114G
100mA
TA124G
DTC144G
d2396
TRANSISTOR PNP B1443
D2396 equivalent
B1569A
TRANSISTORS PNP 50 V 1 A B1443
B1186A
transistor c5147
b1344
transistor equivalent b1443
K2460
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2SK1254
Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin
12-pin
4AK17
2SK972
4AK15
2SK971
2SK1254
2sj177
2SK970
2SK971
2SK972
2SK973
2SK975
4AK16
4AK17
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HA 12058
Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Text: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION
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HD25/HD
HMCS40
HL8314E"
HL8312
HL8311
HLP1000
HL7802
HL7801
HL1221
HLP5000
HA 12058
HA12047
HA12038
ha12058
17812P
HA 12046
HA12026
HA12045
17815P
17808P
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2SK1120
Abstract: No abstract text available
Text: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 4.0S (Typ.)
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2SK1120
-l-50
2SK1120
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
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