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    TRANSISTOR 2SD1767 Search Results

    TRANSISTOR 2SD1767 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SD1767 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    transistor 2sb1238

    Abstract: 2sb1238
    Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5


    Original     		2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 SC-62 transistor 2sb1238 PDF

    2SB1189

    Abstract: 2SB1238 2SD1767 2SD1859 T100
    Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5


    Original     		2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 SC-62 2SB1238 2SD1859 T100 PDF

    2Sb1238

    Abstract: 2SB1189 2SD1767 2SD1859 T100 ic T100 bd marking code transistor ROHM
    Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5


    Original     		2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 SC-62 2Sb1238 2SD1859 T100 ic T100 bd marking code transistor ROHM PDF

    2SB1238

    Abstract: No abstract text available
    Text: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Dimensions (Unit : mm) 2SB1189 4.0 1.5 0.4 1.0 Collector power dissipation


    Original     		2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 SC-62 R1010A PDF

    marking BDR

    Abstract: 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR PNP FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


    Original     		OT-89 2SB1189 2SD1767 -100mA -500mA -50mA -50mA 100MHz marking BDR 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82 PDF

    2SD1859

    Abstract: 2SB1189 2SB1238 2SD1767 T100 sc621
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


    Original     		2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 SC-62 2SD1859 2SB1238 T100 sc621 PDF

    2SD1859

    Abstract: No abstract text available
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


    Original     		2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 SC-62 PDF

    2sd1767

    Abstract: 2SD1859
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


    Original     		2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 SC-62 PDF

    2SD1859

    Abstract: 2SD1767 2SB1189 2SB1238 T100
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


    Original     		2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 2SB1238 T100 PDF

    2SB1238

    Abstract: 2SB1189 2SD1767 2SD1859 T100
    Text: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5 0.4 1.0 VCBO −80 Collector-emitter voltage


    Original     		2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 2SD1859 T100 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1767 TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Complement the 2SB1189 2. COLLECTOR


    Original     		OT-89-3L OT-89-3L 2SD1767 2SB1189 100mA 500mA 100MHz PDF

    7A SMD

    Abstract: 2SD1767
    Text: Transistors SMD Type Medium Power Transistor 2SD1767 Features High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage


    Original     		2SD1767 40X40X0 500mA -50mA, 100MHz 7A SMD 2SD1767 PDF

    marking 07 sot89

    Abstract: No abstract text available
    Text: 2SB1189 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B 2.6 4.25 2.4 3.75 Features — — 0.8 MIN High breakdown voltage Complements to 2SD1767 0.44 0.37 Parameter B 0.53 0.48 0.40 2x) 0.35 1.5 3.0 Dimensions in inches and (millimeters)


    Original     		2SB1189 OT-89 OT-89 2SD1767 -100mA -500mA -50mA 100MHz marking 07 sot89 PDF

    rds035

    Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
    Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW


    Original     		RHU002N06 2SD2167 56to270 2SB1132 2SD1664 82to390 2SB1188 2SD1766 2SB1182 2SD1758 rds035 rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)


    OCR Scan     		2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F 2SB889F 2SD1767/2SD1859/2SD1200F. PDF

    ic 11105 h

    Abstract: No abstract text available
    Text: h 7 > V ^ ^/Transistors 2SD1767 2SD1767 T £ $ * V T \ r f \ s —yf& NPN Epitaxial Planar NPN Silicon Transistor fl£U5fc 2jiil§ffl/Low Freq. Power Amp. • feft 1) • W f^ jilS l/D im e n sio n s Unit : mm) P C = 2 W T * 5 (40X 40X0.7mm * 7 $ . y


    OCR Scan     		2SD1767 40X40X0 SC-62 2SB1189. ic 11105 h PDF

    2SD1659

    Abstract: 2SB689F 2sb123b
    Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors I Medium Power Transistor —80V, —0.7A 2 S B 1 189 / 2 S B 1 238 / 2 S B 8 8 9 F •F e a tu re s • A b s o lu t e m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage and high current. (—80V, - 0.7A)


    OCR Scan     		2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F --80V, 2SB123B 2SB689F -126FP 2SD1659 PDF

    2SC5053 NPN

    Abstract: B-2180
    Text: M* Transistors/Surface I' tr4 » w - Mounting Type • MPT3 • CPT3 Package MPT3 series includes mini molded power transistor models rated at Pc=0.5 to 2 W SC-62 ; CPT F5 series are surface mounting power transistors. Part No. Application PNP 2S02167 - -


    OCR Scan     		SC-62) 2S02167 2SD1664 2SD1766 2SD1767 2SC5053 2SD2318 2SA1759 2SA1812 2SC4505 2SC5053 NPN B-2180 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1767 / T ransistors c n i 7 6 7 y '; ^ > h 7 > y ^ 4 , ^ ;tHll,i ffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistor npn Pc = 2 W T & -S 40X 4 0 X 0 .7 m m -b 7 5 2 isiMEE, 7 • T tiiG S /D im e n s io n s (U n it: mm) so- yi v; V Ui ~r


    OCR Scan     		2SD1767 2SB1189 2SB1189. PDF

    2SD1767

    Abstract: No abstract text available
    Text: 2SD1767 N ~7> V 7. £ /Transistors O O Q 4 I t f ^ d r v 7 7 ; u y u - ^ N # w f P N Epitaxial Planar NPN Silicon Transistor f i ^ j 5 S ^ l i ,H ffl/L o w Freq. Power Amp. • « * 1) = l U ? * j a £ , PC= 2 W T 'S - 5 40 X 4 0 X 0.7mm Hz 5 5 y ? S H 3 ifN i) o


    OCR Scan     		2SD1767 SC-62 2SD1767 PDF

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C PDF

    l289

    Abstract: No abstract text available
    Text: Is 7 > V X $ /Transistors 2SB1189 /M e d iu m Power Amp. Epitaxial Planar PNP Silicon Transistor • 4^JfiTj-;£[21/D iin e n s io n s Unit : mm 1 ) = i u ' ? i i j a ^ P c = 2 w r ' * 5 [, (4 0 x -7 40X0.7mm-tz 7 S 2) ra R E E , V ifc V ceo= - 80V, X


    OCR Scan     		2SB1189 40X40X0 2SD1767 l289 PDF