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    TRANSISTOR 2SC372 Search Results

    TRANSISTOR 2SC372 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC372 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    High Current Switching Applications transistor

    Abstract: No abstract text available
    Text: 2SC3723 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters


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    PDF 2SC3723 O-220AB SC-46 High Current Switching Applications transistor

    2SC3723

    Abstract: 2sc372
    Text: 2SC3723 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters


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    PDF 2SC3723 O-220AB 2SC3723 2sc372

    Untitled

    Abstract: No abstract text available
    Text: Product Specification 2SC3720 Silicon NPN Power Transistor DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection


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    PDF 2SC3720

    smd transistor yf

    Abstract: smd marking YF smd marking YE SMD TRANSISTOR MARKING 28 marking YG marking YF YF 215 2SC3728 hFE CLASSIFICATION Marking 017V
    Text: Transistors SMD Type Small Signal Transistor 2SC3728 Features High hFE=150 to 800. High collector current Ic=2A . High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). Small package for mounting. Absolute Maximum Ratings Ta = 25


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    PDF 2SC3728 500mW. 100mA -10mA smd transistor yf smd marking YF smd marking YE SMD TRANSISTOR MARKING 28 marking YG marking YF YF 215 2SC3728 hFE CLASSIFICATION Marking 017V

    2SC3725

    Abstract: SC-65 W450
    Text: 2SC3725 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING NPN三重拡散プレーナ形トン 高 耐 圧 高速スイッチング用 外形寸法 : Outline Drawings 外形寸法: TO-3P 特長 :Features 特長:


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    PDF 2SC3725 2SC3725 SC-65 W450

    marking CODE n3 6PIN

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
    Text: 2010年3月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorDiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 2


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    PDF 2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7

    2SC3724

    Abstract: SC-65
    Text: 2SC3724 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING NPN三重拡散プレーナ形トン 高 耐 圧 高速スイッチング用 外形寸法 : Outline Drawings 外形寸法: TO-3P 特長 :Features 特長:


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    PDF 2SC3724 2SC3724 SC-65

    2SD921

    Abstract: 2SC2625 2sc2625 equivalent et190 transistor ET401 2sc3030 2SC2625 transistor 2sc3318 ET206 2sc4242
    Text: BIPOLAR TRANSISTORS Nov-01 Quick Selection Guide Comprehensive chart -40 to 400 voltage Collector current Ic cont. * PNP transistor VCEO sus Voltage min. Collector-to-emitter voltage -80 40 (A) -5 3 4 50 60 80 100 180 200 250 300 2SD834 2SD1128 2SD921 2SC2767


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    PDF Nov-01 2SC2929 2SD1157 2SD834 2SD1073 2SD1128 2SD921 2SC2767 2SD982 2SC2768 2SC2625 2sc2625 equivalent et190 transistor ET401 2sc3030 2SC2625 transistor 2sc3318 ET206 2sc4242

    transistor 2sc124

    Abstract: transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 BC 9014 2SC124 9014 Transistor BC 547 transistor
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC15-0 HN / BC 548 / 9014 2SC166 HN / BC 548 / 9014 2SC376 HN / BC 546 / 9014 2SC15-1 HN / BC 546 / 9014


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    PDF To-92 2SC15-0 2SC166 2SC376 2SC15-1 2SC167 2SC400 2SC16 2SC182 2SC401 transistor 2sc124 transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 BC 9014 2SC124 9014 Transistor BC 547 transistor

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


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    PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    pin diagram of 74163

    Abstract: 2sc372 7404 pin configuration transistor 2SC372 pin diagram of 7404 equivalent transistor of F2B transistor pdf 2sc372 RD13B 7404 pin configration 74107 pin diagram
    Text: This version: Jan. 1998 Previous version: May. 1997 E2P0059-37-X2 ¡ electronic components OPA256C–1 IMAGE SENSORS OPA256C–1 Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA256C-1 is a 256-bit, one-dimensional diode array comprised of PN junction photodetector


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    PDF E2P0059-37-X2 OPA256C OPA256C-1 256-bit, 2SC372 1S2075K 2SC169 pin diagram of 74163 2sc372 7404 pin configuration transistor 2SC372 pin diagram of 7404 equivalent transistor of F2B transistor pdf 2sc372 RD13B 7404 pin configration 74107 pin diagram

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    diode marking YG

    Abstract: 2SC3728 MITSUBISHI LOT NO transistor cr marking
    Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3728 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3728 Is a silicon N PN epitaxial type transistor.There is a built-in zener diode between collector to emitter.


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    PDF 2SC3728 2SC3728 150to800 500mW 100mA -10mA diode marking YG MITSUBISHI LOT NO transistor cr marking

    3722K

    Abstract: No abstract text available
    Text: K "7 > y $ / T ransistors 2SC3722K 2SC 3722K I k°$ * '> 5 K NPN BW EßH /High Voltage Low Freq. Low Noise Amp. Epitaxial Planar Super Mini-Mold NPN Silicon Transistor h y 1 ¡ s w a t 5* 2) * V c i eo = 1 2 0V ) •(N F=0.2dB Typ.) 1.9 C.950.95 3) 2SA1455K


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    PDF 2SC3722K 3722K 2SA1455K 2SA1455K. 2SC3722K Fig12 3722K

    2SC3722

    Abstract: No abstract text available
    Text: h "7 > v 7»$ /Transistors • m W m Epitaxial Planar NPN Silicon Transistor S W S ftS a & fiS i^ fillg ffl/H ig h Voltage Low Freq. Low Noise Amp. • • & £ 1 a 2SC3722K I H E Dimensions Unit : mm) - (V ce o = 120V) 2) f i 3 8 ^ T '* - 5 : (N F =0.2dB Typ.)


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    PDF 2SC3722K 2SA1455K. 100kQ 2SC3722K 2SC3722

    2SK1973

    Abstract: d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307
    Text: Transistor Quick reference I Laadad p P a g e lli Package-Application Vceo V * * y,CES * * *w CER Vn«w Application EM3 UMT 2SC4081LN 40 Low Noise I 50 25 60 Package | Part No. f 2SA1037AKLN(E) SMT / 2SA1774 \2 S C 4 6 1 7 120 2SC4723 /2SA 1576A V2SC3722K


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    PDF /2SA103GK 2411K 2SB1197K 2SD1781K 2SB1051K 2SD1484K 2SA1774 2SC4723 2SC4081 2SA1037AKLN 2SK1973 d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


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    PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    2SA495

    Abstract: 2SA495-Y 2sa495 toshiba 2SA495Y transistor 2SC372 transistor 2sa495 2SA495-0 2SA4950 2SC372 sfe 4.5
    Text: ^ ijD yP N P X £ 5 > *y p m h ÿ y 5 JZ 5 > P C T fi% 2 s a 495 ^ L IC O N PNP EPITAXIAL TRANSISTOR (PCT PROCESS) Unit in mm O -«JtSffl o General Amplifier Applications 0 5 . 8 MAX. Y y > i? *s a ; W ; f‘x = 2 °0MHz (Typ. ) v CE(Bat) = — 0.2V (Typ.)


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    PDF 2sa495 200MHz iSC37Ã 2SC372 95MAX. 2SA495 2SA495-Y 2sa495 toshiba 2SA495Y transistor 2SC372 transistor 2sa495 2SA495-0 2SA4950 2SC372 sfe 4.5

    transistor b1184

    Abstract: B1474 C5072 C4938 b1184 transistor 3722K c4998 2SB1051 K2306 2sc4937
    Text: Transistor Quick reference I Leaded ^ F ’ i i I: Package -Application Application * ^ * VrFR iV EM 3 | UM T | SM T *VnSR 2S C 408 1LN 40 Low Noise | CPT F5 | F3 > / 2S A 1037 A K L N E ) \ 2 S C 2 4 1 2KLNÎE1 2S C 2412K LN ÌR S Ì /2 S A 1 4 5 5 K


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    PDF 2SA1037AKLN V2SC41 2412K 3722K 4642K A1037AK 2411K B1197K 2SA1727 transistor b1184 B1474 C5072 C4938 b1184 transistor c4998 2SB1051 K2306 2sc4937

    2SA481

    Abstract: 2SC484 transistors EP 487 2SC1000 2sc400 2SC497 2SC372 2SC486 2SC501 transistor 2SC372
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2SC503 2SC504 2SC495 2SC509 2SC510 2SA481 2SC484 transistors EP 487 2SC1000 2sc400 2SC497 2SC372 2SC486 2SC501 transistor 2SC372

    2SA1455K

    Abstract: 2SC3722K T146 T147 OA95
    Text: 2SA1455K K ~7 > y 7s £ /'Transistors P N P '> U n > 2 S A 1 4 5 5 K Epitaxial Planar PNP Silicon Transistor £ i*E ftJ l& & g i£ ^ ig itiffl/H ig h Voltage Low Freq. Low Noise Amp. • ftft 1 » W E T * S o Vceo = -1 2 0 V 2) N F=0.2dB Typ.) (at V c e = —6V, lc = - 1 0 0


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    PDF 2SA1455K -I20V -120V -100mA, 2SC3722K. SC-59 2SA1455K 2SC3722K T146 T147 OA95

    2SC373

    Abstract: transistor 2sc373 2sc372 transistor 2SC372 2SC372 2SC373 2SC372 transistor 2sc373 toshiba 2SA495 2SC37 NPN 2sc372
    Text: 2SC3 2 G 2 / U D > N P N Z t i ^ 5 / ? ;W B h 5 > 5 ;^ P C T S S C SILICON NPN EPITAXIAL TRANSISTOR ( PCT PROCES^^ 2S c 3 3 G O O a f t ! # « yf- INDUSTRIAL APPLICATIONS o H ig h Frequency A m p li fie r A p p lic a t io n s o H igh Speed S w itc h in g A p p lic a t io n s


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    PDF 2SA495Â 2sc372Â 2sc373Â 2SC373 transistor 2sc373 2sc372 transistor 2SC372 2SC372 2SC373 2SC372 transistor 2sc373 toshiba 2SA495 2SC37 NPN 2sc372

    2sc372

    Abstract: transistor 2sC372 2SC372Y 2SC372-Y 2SC372 transistor 2SC373 NPN 2sc372 transistor 2sc373 2SC37 2SC372 2SC373
    Text: i/ 'J D ^ N P N It ^ s / ^ J W B h ^ ^ ^ C P C T B Ä SILICON NPN EPITAXIAL TRANSISTOR PCT PROCESS O o H igh Frequency A m p lifie r A p p lic a tio n s U n i t in m m Low F r e q u ö n c y A m p l i f i e r A p p l i c a t i o n s M A X I M U M RATINGS


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    PDF Jl045 2sc372 2sc373 VCB-18V, IE-073 2SC373 transistor 2sC372 2SC372Y 2SC372-Y 2SC372 transistor NPN 2sc372 transistor 2sc373 2SC37 2SC372 2SC373