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    2SC501 Search Results

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    2SC501 Price and Stock

    California Eastern Laboratories (CEL) 2SC5011-A

    RF TRANS NPN 12V 6.5GHZ SOT343
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    California Eastern Laboratories (CEL) 2SC5015-A

    RF TRANS NPN 6V 12GHZ SOT343
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    California Eastern Laboratories (CEL) 2SC5012-A

    RF TRANS NPN 10V 9GHZ SOT343
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    California Eastern Laboratories (CEL) 2SC5010-A

    RF TRANS NPN 6V 12GHZ SOT523
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    California Eastern Laboratories (CEL) 2SC5013-A

    RF TRANS NPN 10V 10GHZ SOT343
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    2SC501 Datasheets (93)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC501 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC501 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC501 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC501 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC501 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC501 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC501 Unknown Cross Reference Datasheet Scan PDF
    2SC5010 NEC NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Original PDF
    2SC5010 NEC Semiconductor Selection Guide Original PDF
    2SC5010 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC5010 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5010-A CEL Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-523 Original PDF
    2SC5010FB NEC NPN Silicon Epitaxial Transistor 3 Pin Ultra Super Mini Mold Original PDF
    2SC5010FB-T1 NEC NPN Silicon Epitaxial Transistor 3 Pin Ultra Super Mini Mold Original PDF
    2SC5010-T1 NEC NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Original PDF
    2SC5010-T1-A CEL Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-523 Original PDF
    2SC5010-T1/-T2 NEC NPN epitaxial-type silicon transistor Original PDF
    2SC5010-T1_-T2 NEC NPN epitaxial-type silicon transistor Original PDF
    2SC5011 NEC HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD Original PDF
    2SC5011 NEC Semiconductor Selection Guide 1995 Original PDF

    2SC501 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5010

    Abstract: 2SC5435 2SC5435-T1 marking tk
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5435 2SC5010 2SC5435-T1 2SC5010 2SC5435 2SC5435-T1 marking tk

    nec 2401 831

    Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and


    Original     		PDF 2SC5010 2SC5010 nec 2401 831 nec 2401 2SC5010-T1 437 20000 marking 83 7749 transistor

    2SC5019

    Abstract: No abstract text available
    Text: Transistors 2SC5019 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 4.5±0.1 • Features 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3˚ 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08 2.5±0.1 ue pl d in


    Original     		PDF 2SC5019 2SC5019

    2SC5012-T1

    Abstract: transistor marking R37 ghz 2SC5012
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5012 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 9 GHz TYP. • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package


    Original     		PDF 2SC5012 2SC5012-T1 2SC5012-T1 transistor marking R37 ghz 2SC5012

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PA862TD NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES • Low voltage operation <R> • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor


    Original     		PDF PA862TD R09DS0032EJ0200 2SC5010, 2SC5801) 2SC5010 2SC5801

    2SC5018

    Abstract: No abstract text available
    Text: Transistors 2SC5018 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO (0.5)


    Original     		PDF 2SC5018 2SC5018

    nec 2412

    Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
    Text: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1


    Original     		PDF 2SC5012 2SC5012-T1 2SC5012-T2 nec 2412 transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC5018 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 M Di ain sc te on na tin nc ue e/ d • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SC5018

    2SC5018

    Abstract: No abstract text available
    Text: Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.8 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 ● 1.45 1.0 1.0 ● 4.0


    Original     		PDF 2SC5018 2SC5018

    2SC5018

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5018 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) M Di ain sc te on na tin nc ue e/ d 0.7 ue pl d in


    Original     		PDF 2002/95/EC) 2SC5018 2SC5018

    2SC5801

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary PA862TD Data Sheet NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES <R> • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801)


    Original     		PDF PA862TD R09DS0032EJ0200 2SC5010, 2SC5801) S21e2 2SC5010 2SC5801 2SC5801

    nec 2532

    Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain


    Original     		PDF 2SC5014 2SC5014) 2SC5014-T2 nec 2532 NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SC5018 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 6.9±0.1 4.0 2.5±0.1 0.8 • Features 0.65 max. 14.5±0.5 (1.0) • High collector to base voltage VCBO • High emitter to base voltage VEBO


    Original     		PDF 2SC5018

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SC5019 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 • Absolute Maximum Ratings * 0.4±0.04 3° 2.6±0.1 ● 0.4 max. ● Low noise figure NF. High gain. High transition frequency fT.


    Original     		PDF 2SC5019

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC5019 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 1.6±0.2 4.0+0.25 –0.20 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow


    Original     		PDF 2SC5019

    CD 1691 CB

    Abstract: NEC 7924 NEC D 986 IC - 7434
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 CD 1691 CB NEC 7924 NEC D 986 IC - 7434

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5010

    2SC5012-T1

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •


    OCR Scan     		PDF 2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1

    transistor NEC B 617

    Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and


    OCR Scan     		PDF 2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain •


    OCR Scan     		PDF 2SC5015 2SC5015-T1 2SC5015-T2

    3563 1231

    Abstract: transistor NEC B 617 nec d 1590
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain


    OCR Scan     		PDF 2SC5015 2SC5015-T1 2SC5015-T2 3563 1231 transistor NEC B 617 nec d 1590

    LA 7693

    Abstract: ic CD 4047 7737 transistor
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain


    OCR Scan     		PDF 2SC5014 2SC5014-T1 2SC5014-T2 LA 7693 ic CD 4047 7737 transistor

    transistor NEC D 882 p

    Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain


    OCR Scan     		PDF 2SC5011 2SC5011-T1 transistor NEC D 882 p 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P

    TRANSISTOR GB 558

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558