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    2SD834 Search Results

    2SD834 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD834 Fuji Electric Power Transistor Original PDF
    2SD834 Collmer Semiconductor Power / High Speed / Transistors Scan PDF
    2SD834 Fuji Electric Triple Diffused Planer Type High Power Darlington Switching Scan PDF
    2SD834 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD834 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD834 Unknown Scan PDF
    2SD834 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD834 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD834 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD834 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SD834 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD834

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD834 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High DC current gain ·DARLINGTON ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Electronic ignitor ·Relay and solenoid drivers


    Original
    PDF 2SD834 O-220 O-220) 2SD834

    Untitled

    Abstract: No abstract text available
    Text: 2SD834 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON SWITCHING Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter Applications


    Original
    PDF 2SD834 O-220AB SC-46

    2SD834

    Abstract: NPN POWER DARLINGTON TRANSISTORS
    Text: Inchange Semiconductor Product Specification 2SD834 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Electronic ignitor


    Original
    PDF 2SD834 O-220 O-220) 2SD834 NPN POWER DARLINGTON TRANSISTORS

    2SD834

    Abstract: No abstract text available
    Text: , Line. c/.£ii£u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SD834 Outline Drawings TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON TO-220AB SWITCHING • Features • High D.C. current gain


    Original
    PDF 2SD834 O-220AB SC-46 2SD834

    2SD834

    Abstract: No abstract text available
    Text: 2SD834 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON SWITCHING Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter Applications


    Original
    PDF 2SD834 O-220AB 2SD834

    2SD921

    Abstract: 2SC2625 2sc2625 equivalent et190 transistor ET401 2sc3030 2SC2625 transistor 2sc3318 ET206 2sc4242
    Text: BIPOLAR TRANSISTORS Nov-01 Quick Selection Guide Comprehensive chart -40 to 400 voltage Collector current Ic cont. * PNP transistor VCEO sus Voltage min. Collector-to-emitter voltage -80 40 (A) -5 3 4 50 60 80 100 180 200 250 300 2SD834 2SD1128 2SD921 2SC2767


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    PDF Nov-01 2SC2929 2SD1157 2SD834 2SD1073 2SD1128 2SD921 2SC2767 2SD982 2SC2768 2SC2625 2sc2625 equivalent et190 transistor ET401 2sc3030 2SC2625 transistor 2sc3318 ET206 2sc4242

    2SC2625

    Abstract: et190 equivalent ET191 2sc2625 equivalent ET206 2SC2929 2SD1072 2SD982 2SC2438 2SC2542
    Text: パワーデバイス / Power Devices • パワートランジスタ (モールドタイプ) Power Transistors Molded types 超高速スイッチングトランジスタ High speed switching transistors 形 式 Device type VCBO VCEO 2SC2438 2SC2767


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    PDF 2SC2438 2SC2767 2SC2768 2SC2769 2SC2944 2SC2626 2SC2929 2SC2542 2SC3723 2SC3317 2SC2625 et190 equivalent ET191 2sc2625 equivalent ET206 2SC2929 2SD1072 2SD982 2SC2438 2SC2542

    2SD883A

    Abstract: 2SD883 2SD853 2SD848A 2SD898B 2SD808 12073A 2SD887 2SD852 2SD815
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD801 800 7 6A 50W(Tc=25ºC) 150 3.5-12 5 4A 2SD802 900 7 6A 50W(Tc=25ºC) 150


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    PDF 2SD801 2SD802 2SD803 2SD804 70kHz 2SD805 2SD806 2SD807 2SD808 2SD809 2SD883A 2SD883 2SD853 2SD848A 2SD898B 2SD808 12073A 2SD887 2SD852 2SD815

    2SC4510R

    Abstract: ET127 ET-190 et190 ringing choke converter
    Text: • /\°7 — x / W X / Power Devices # 1 Ir^ lt / \°7 — £ — U > K > h "7 > v JX. £ m s£ Devic«type 2SD833 2SD916 ET378 2SD834 2SD1073 2SD835 2SD1072 2SD1071 ET375 ET190 ET191 VcBO V £0 Power darlington transistors Ic -,$£5 Cont. Amps. Watts <Mm.


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    PDF 2SD833 2SD916 ET378 2SD834 2SD1073 2SD835 2SD1072 2SD1071 ET375 ET190 2SC4510R ET127 ET-190 ringing choke converter

    ET-191

    Abstract: No abstract text available
    Text: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*


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    PDF 2SD921 2SC2929 2SC3549 2SC3551 2SD1157 2SC3550 ET383 2SD834 2SD1073 ET393 ET-191

    IMO 731 relay

    Abstract: 2SD834 T151
    Text: 2SD834 N P N = m i i ï M T R IPLE D IFFU S E D P LA N E R T Y PE HIGH P O W E R D A R LIN G T O N 7 i ' - i - ï ï i S W IT C H IN G X - iv f- 's ÿ fB Features • High D. C. current gain • Low saturation voltage • A S O ^ J av.' • f t lS f H i Excellent safe operating area


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    PDF 2SD834 11rtbtzb, l95t/R89 IMO 731 relay 2SD834 T151

    Untitled

    Abstract: No abstract text available
    Text: 2SD834 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON NP SWITCHING X - iK r 9 - > 9 n • 4 # « : F e a tu r e s • hpE^iftv.' High D. C. cu rren t gain • Low saturation voltage • Excellent safe operating area • B i t ÎB të High reliability ■ Æ 3Ü I ! A p p l i c a t i o n s


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    PDF 2SD834 I95t/R

    etg36 040d

    Abstract: 2SC2930 diode b6 k 450 ETG36-040C 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833
    Text: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.


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    PDF ETG36-040C ETG36-040D O-220F ET375 2SC2930 etg36 040d diode b6 k 450 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


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    PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    ET-191

    Abstract: No abstract text available
    Text: K l Power darlington transistors • The DC c u rre n t gain is high, • H ig h ly ve rsatile Dc'vii;« typo Volts Volts V geo sus Volts 60 60 50 7 30 800 3 1.5 — 80 80 80 7 60 2000 3 3 1.0 80 80 80 7 40 1000 3 1.5 1.0 150 100 80 7 25 400 5 2 2.0 VcESO


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    PDF 2SD916 O-220F17 O-220AB ET206 ET383 2SC3047 000372G ET-191

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SC2930

    Abstract: ETG36-040D diode B4 diode b6 k 450 ETG36-040C 2SD1071 B4 diode 2SD2350 2SD1726 2SD833
    Text: Transistors COLLMER SEMI CONDUCTOR I NC 2230712 MAE D 0001b02 2T 2 ICOL »* 2 °\ High speed switching darlington transistors • These are o f d arling to n typ e and are pro vided w ith a h ig h er hFE. • S w itch in g speed is in th e rang e o f tf=1jas.


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    PDF 0001b02 ETG36-040C ETG36-040D O-220F ET365 ET385 ET375 2SC2930 diode B4 diode b6 k 450 2SD1071 B4 diode 2SD2350 2SD1726 2SD833

    2SD818

    Abstract: 2SD844 fst 240 2sb764 2SD859 2SD811 2SD812 2SD813 2SD814 2SD814A
    Text: - 226 - T a = 2 5 eC . * E P ( ä T c = 2 5 ‘ C »CBO m Ic(DC) Pc Pc* (A) (W) (W) (V) tt (UA) (T a = 2 5 t : ) U/tr V/Nr" »CB (V) M lldA/ (V) m hp fmay^ (A ) 1" (V) [* E P (S typ ffi] '(V)' '(V)' Ic (A) 0.5 6 50 1000 900 10 40 5 PA 80 80 5 40 50 80 40


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    PDF 2SD811 2SD812 2SD813 2SD814 2SD814A 2SD818 2SD819 2SD841 zmw42 2SB753 2SD818 2SD844 fst 240 2sb764 2SD859 2SD813 2SD814 2SD814A

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2sc4977

    Abstract: transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor
    Text: FUJI STLSÊirtEDÊ SWITCHING TRANSISTORS Ée "j . '• ï>> I TÉjJii * N fq & zo \ _ < § P". m \k ‘ W » M î» T Is V l IC AMPS Max. 3 5 6 8 VcEoV J sus 800 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 700 80 2SC3505 Ppc IC AMPS


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    PDF 2SC2929 2SC3549 2SD1157 2SD834 2SD1073 2SB862* 2SD1128 2SD982 2SC2767 2SD1072 2sc4977 transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor

    2SC3033

    Abstract: Transistor 2sc2246 ETG36-040D 2sd920 2SC2437 2SC2930 ET403 NPN 2SC382 2SC303 transistor ET191
    Text: COLL MER SEMICONDUCTOR INC MAE D • 22367=12 OüDlSflQ SOI « C O L Switching Iftmsistors/MQV's ^ g SWITCHING TRANSISTORS TO-220AB TO-220F kcont. V c e o s u s Volts Pc Device type Amps. Max. Min. Watts NPN 3 400 600 60 40 2SC2929 2SC3549 4 250 60 2SD1073


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    PDF O-220AB 2SC2929 2SC3549 2SD1073 2SB862* 2SD1128 2SD930 2SD2767 2SD834 2SD982 2SC3033 Transistor 2sc2246 ETG36-040D 2sd920 2SC2437 2SC2930 ET403 NPN 2SC382 2SC303 transistor ET191

    48v to 230v inverters circuit diagram

    Abstract: i300n bi50l120 2SC 2625 transistor 7MBR10NF120 2RI100G-160X2PX3 EVK71-050 2SC2625 application note 24v dc to 230v ac inverter fuji transistor catalog
    Text: Applications hiiiftH— j\\ Note: This catalog describes the m ain usages o f pow er transistors FUJI supplies these versatile elem ents fo r a w ide range of electronic equipm ent. Please contact FUJI fo r your particular application. 63 ; r - — I • Electronic ignitor use


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    PDF 2SD834 2SD1071 2SD1073 BR15NF120 BR25NF120 I25L-120x3 I50L-120x3 -120x3 48v to 230v inverters circuit diagram i300n bi50l120 2SC 2625 transistor 7MBR10NF120 2RI100G-160X2PX3 EVK71-050 2SC2625 application note 24v dc to 230v ac inverter fuji transistor catalog

    14D241

    Abstract: Bt141 mz3 ptc 14d561 PCB Potentiometers RA 16Y thermistor MZ4 OS 430 NR, VARISTOR
    Text: Electrolytic Capacitors 1 Potentiometers. 21 Connectors 36 Intermediate Frequency Transformers.55 Varistors. 57 Thermistors 61


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    PDF 045x022x8 I245F 032x018x6 14D241 Bt141 mz3 ptc 14d561 PCB Potentiometers RA 16Y thermistor MZ4 OS 430 NR, VARISTOR

    2SD1071

    Abstract: 2SD1073 2SD1726 2SD1797 2SD2350 2SD833 2SD834 2SD835 2SD916 ETG36-040C
    Text: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.


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    PDF ETG36-040C ETG36-040D O-220F ET375 2SC2930 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833 2SD834 2SD835 2SD916