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    TRANSISTOR 2SC2782 Search Results

    TRANSISTOR 2SC2782 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC2782 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC2782

    Abstract: NPN 2SC2782 transistor 2sc2782
    Text: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V


    Original     		2SC2782 2SC2782 to175 NPN 2SC2782 transistor 2sc2782 PDF

    2SC2782A

    Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782
    Text: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING


    Original     		2SC2782A 175MHz, 2SC2782A 2SC2782 NPN 2SC2782 transistor 2sc2782 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2782A TOSHIBA Transistor Silicon Npn Epitaxial Planar Type 2SC2782A VHF Band Power Amplifier Applications Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL RATING


    Original     		2SC2782A 175MHz, PDF

    NPN 2SC2782

    Abstract: transistor 2sc2782
    Text: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


    Original     		2SC2782A 175MHz, 2-13C1A 2SC2782 NPN 2SC2782 transistor 2sc2782 PDF

    NPN 2SC2782

    Abstract: No abstract text available
    Text: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


    Original     		2SC2782A 175MHz, 2-13C1A 2SC2782 NPN 2SC2782 PDF

    2SC2782

    Abstract: NPN 2SC2782 transistor 2sc2782
    Text: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm l Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


    Original     		2SC2782 175MHz, 2-13C1A 000707EAA1 175MHz 2SC2782 NPN 2SC2782 transistor 2sc2782 PDF

    NPN 2SC2782

    Abstract: transistor 2sc2782 2SC2782
    Text: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


    Original     		2SC2782 175MHz, 2-13C1A 000707EAA1 175MHz NPN 2SC2782 transistor 2sc2782 2SC2782 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a PDF

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original     		BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS PDF

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509 PDF

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram PDF

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112 PDF

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


    Original     		2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293 PDF

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322 PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    33PFX4

    Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
    Text: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING


    OCR Scan     		2SC2782 175MHz, 2-13C1A 961001EAA2' 33PFX4 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF PDF

    transistor 2sc2782

    Abstract: NPN 2SC2782
    Text: TOSHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS. U nit in mm ia 4 ± a 5 O utput Power : Po = 80W Min. (f = 175MHz, V c c = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL


    OCR Scan     		2SC2782 175MHz, 2-13C1A 961001EAA2' transistor 2sc2782 NPN 2SC2782 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 78 2 VHF BAND POWER AMPLIFIER APPLICATIONS • U n it in mm 1 8 .4 ± Q 5 Output Power : Po = 80W Min. (f= 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC


    OCR Scan     		2SC2782 175MHz, 961001EAA2' PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


    OCR Scan     		4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362 PDF