2SC2782
Abstract: NPN 2SC2782 transistor 2sc2782
Text: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V
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2SC2782
2SC2782
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NPN 2SC2782
transistor 2sc2782
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Untitled
Abstract: No abstract text available
Text: Surface Mount Voltage Controlled Oscillator Wide Band ROS-1750W-619+ 950 to1750 MHz Features • low phase noise • low pulling • low pushing • aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 Applications + RoHS compliant in accordance
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ROS-1750W-619+
CK605
2002/95/EC)
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ROS-1750W-619
Abstract: No abstract text available
Text: Surface Mount Voltage Controlled Oscillator Wide Band ROS-1750W-619+ 950 to1750 MHz Features • Low Phase Noise • Low Pulling • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 Applications + RoHS compliant in accordance
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to1750
ROS-1750W-619+
CK605
2002/95/EC)
10KHz
100KHz
ROS-1750W-619
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ROS-1750W-619
Abstract: 1202-9 72 PL-012 012F4
Text: Surface Mount Voltage Controlled Oscillator Wide Band ROS-1750W-619+ 950 to1750 MHz Features • Low phase noise • Low pulling • Low pushing • Aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 Applications + RoHS compliant in accordance
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ROS-1750W-619+
to1750
CK605
2002/95/EC)
ROS-1750W-619
1202-9 72
PL-012
012F4
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h2003
Abstract: H2032 l2032 m2008 h2022 H2023 M2005 M2023 H2004 M2001
Text: FULL SIZE D.I.L. M2001 thru M2007 L2001 thru L2007 M2021 thru M2023 L2021 thru L2023 M2031 thru M2033 L2031 thru L2033 VOLTAGE CONTROLLED OSCILLATORS HCMOS, 0° TO 70°C M2008 HALF SIZE D.I.L. H2001 thru H2007 H2021 thru H2023 H2031 thru H2033 Thru-Hole / Gull Wing, 5V
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M2001
M2007
L2001
L2007
M2021
M2023
L2021
L2023
M2031
M2033
h2003
H2032
l2032
m2008
h2022
H2023
M2005
M2023
H2004
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ID84
Abstract: 260uH LZP80N06P
Text: LZP80N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge BVDSS=60V , • Wide Expanded Safe Operating Area RDS ON =0.014Ω, Application ID=84 A • DC Tools
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LZP80N06P
above25
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ID84
260uH
LZP80N06P
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100V 60A Mosfet
Abstract: mosfet 50v 30a LTP60N10
Text: LTP60N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application • DC to DC converter • For high-frequency switching
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100V 60A Mosfet
mosfet 50v 30a
LTP60N10
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Untitled
Abstract: No abstract text available
Text: SMALL SIGNAL SWITCHING DIODE YIGUANG 1SS133 1.Dimensions of outlines Unit: mm DO-35 2.Maximum Ratings TYPE NUMBER Symbols Reverse Voltage VR Peak Reverse Voltage VRM V 40 IO mA 110 IFSM A 0.5 Average rectified current, Half wave rectification with Resistive load at TA=25
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1SS133
DO-35
to175
100mA
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Untitled
Abstract: No abstract text available
Text: LZP50N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge • Wide Expanded Safe Operating Area BVDSS=60V , Application RDS ON =0.022Ω, • DC-DC Converters
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LZP50N06P
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auto cut off schematic diagram 48v battery charge
Abstract: thyristor battery charger 24v 100a LUCENT LINEAGE J85503B-2 J85503C3 L3 J85503C rectifier j85501a-2 mcs controller LUCENT LINEAGE 2000 J85503C3 Battery charger 48 volt forklift
Text: Lineage 2000 200-Ampere, 60-Hertz Ferroresonant Rectifier J85503B-2 Product Manual Select Code 169-790-128 Comcode 107666356 Issue 8 January 1999 1999 Lucent Technologies Product Manual J85503B-2 Select Code 169-790-128 Comcode 107666356 Issue 8 January 1999
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200-Ampere,
60-Hertz
J85503B-2
auto cut off schematic diagram 48v battery charge
thyristor battery charger 24v 100a
LUCENT LINEAGE
J85503B-2
J85503C3 L3
J85503C rectifier
j85501a-2 mcs controller
LUCENT LINEAGE 2000
J85503C3
Battery charger 48 volt forklift
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30ETH06
Abstract: 30ETH06-1 30ETH06S
Text: Preliminary Data Sheet PD-20748 09/00 30ETH06 30ETH06S 30ETH06-1 Hyperfast Rectifier Features • • • • trr = 40ns IF AV = 30Amp VR = 600V Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature
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PD-20748
30ETH06
30ETH06S
30ETH06-1
30Amp
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30ETH06
30ETH06-1
30ETH06S
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Mosfet
Abstract: SSPL7508
Text: SSPL7508 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 6.25mohm(typ.) ID 120A ① TO-220 Features and Benefits Marking and Pin Schematic Diagram Assignment Advanced Process Technology Special designed for PWM, load switching and
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SSPL7508
25mohm
O-220
to175
Mosfet
SSPL7508
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FDH5500
Abstract: TB334
Text: FDH5500 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ Features Applications Typ rDS on = 5.2mΩ at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators
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FDH5500
118nC
-TB334,
FDH5500
TB334
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Diode Equivalent 1N4148
Abstract: No abstract text available
Text: SMALL SIGNAL SWITCHING DIODE YIGUANG 1N4148 1.Dimensions of outlines Unit: mm DO-35 2.Maximum Ratings TYPE NUMBER Symbols Reverse Voltage VR Peak Reverse Voltage VRM V 100 IO mA 100 IFSM A 0.5 Average rectified current, Half wave rectification with Resistive load at TA=25
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1N4148
DO-35
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Diode Equivalent 1N4148
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Mosfet
Abstract: SSPL7509
Text: SSPL7509 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 7.2mohm(typ.) ID 75A ① TO-220 Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced Process Technology Special designed for PWM, load switching and
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SSPL7509
O-220
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Mosfet
SSPL7509
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Untitled
Abstract: No abstract text available
Text: THS4521-HT SBOS548C – APRIL 2011 – REVISED DECEMBER 2011 www.ti.com VERY LOW POWER, NEGATIVE RAIL INPUT, RAIL-TO-RAIL OUTPUT, FULLY DIFFERENTIAL AMPLIFIER Check for Samples: THS4521-HT FEATURES 1 • • • • • • • • • • • • Fully Differential Architecture
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THS4521-HT
SBOS548C
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20L30
Abstract: 4OCPQ lm 2309 D-6380 TO-3P BAY40 8700-35 40CPQ40
Text: PD-2.309 International 4ocpqoso riQR1Rectifier 40CPQ100 SCHOTTKY RECTIFIER 40 Amp Description/Features Major Ratings and Characteristics Characteristics 40CPQ. Units iF AV> Rectangular waveform 40 A 80/100 V lFSM @tp-5pssine 2950 A VF 0.61 V -55 to175 °C
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40CPQ100
40CPQ.
to175
O-247
2F3-30-4
Lane03-09A,
NJ07650.
20L30
4OCPQ
lm 2309
D-6380
TO-3P
BAY40
8700-35
40CPQ40
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Untitled
Abstract: No abstract text available
Text: 10 to15 Amp D ata Sheet SIN G LE PHASE SILICO N BRIDGE Description Mechanical Dimensions K < * o Features • BUILT-IN INTEGRAL HEAT SIN K ■ UP TO 300 AMP SURGE OVERLOAD RATING B ^ UL RECOGNITION AVAILABLE ■ SMALL PACKAGE Electrical Characteristics @25°C.
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KBPSC10
KBPSC15
21X21X5
48X22X36cm
21X9X8
51X25X30cm
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A1567
Abstract: NDB7060L NDP7060L transistor b35 A-1567
Text: Na t i o n a I Semiconductor'“ June 1996 NDP7060L/ NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDP7060L/NDB7060L
bS0113D
A1567
NDB7060L
NDP7060L
transistor b35
A-1567
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25CC
Abstract: TLC2801 TLC2801Y TLC2801Z TLC2801ZD TLC2801ZP
Text: TLC2801Z, TLC2801Y Advanced LinCMOS LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS _ Low Input Noise Voltage: 35 nV/VRFMax at f = 10 Hz 15 nV/VRFMax at f = 1 kHz S L O S 1 1 6 A -J U L Y 1 9 9 2 -R E V IS E D AUG UST 1994 Low Input Bias Current:
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TLC2801Z,
TLC2801Y
slos116a-july
1992-revised
TheTLC2801
TLC2801
6Tbl72M
25CC
TLC2801Z
TLC2801ZD
TLC2801ZP
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER L5 E D • 4Û5SM52 0017240 PD-2.330 International SRectifier SD241 SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Description/Features Characteristics SD241 Units lF AV Rectangular 60 A 35/45 V waveform V RRM The SD241 center tap Schottky rectifier has been optimized
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5SM52
SD241
SD241
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IRLZ44
Abstract: 250M IRLZ30 IRLZ34 IRLZ40 004I1
Text: N-CHANNEL LOGIC LEVEL MOSFET IRLZ44/40 FEATURES • • • • • • • • Lower R d s o n Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRLZ44/40
O-22O
IRLZ44
IRLZ40
IRLZ34
IRLZ30
-Vos-30V
Vpg-48V
002T4D5
250M
004I1
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475 50K 608
Abstract: 1N5118 1b2 zener IN4978 1N5126 1N5135 IN4955 in4962 in4989 1N5120
Text: 0135157 DDQOfln 0 2ÔE D SEM I CO N C O M P O N E N T S INC T-// - 15 ENER GLASS CASE 4,1 N5968, &1N5118 SERIES FEATURES: DESCRIPTION • Voidless Subminiature Glass Package Semicon’sglasszenerseriesfeatures high tempera ture metallurgical bonds and a fused glass passiva
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N4954
N5968,
1N5118
1n5134*
1m4996"
1n5135*
475 50K 608
1b2 zener
IN4978
1N5126
1N5135
IN4955
in4962
in4989
1N5120
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IRFIZ34
Abstract: IRFIZ30 diode ja8 IRFWZ30 IRFWZ34 JE-8 iz34
Text: N-CHANNEL POWER MOSFETS IRFWZ34/30 IRFIZ34/30 FEATURES D’-PAK • L o w e r R ds <on • • • • • • Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area
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IRFWZ34/30
IRFIZ34/30
IRFWZ34/IZ34
IRWZ30/IZ30
IRFWZ34
IRFIZ34
IRFWZ30
IRFIZ30
diode ja8
JE-8
iz34
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