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    TRANSISTOR 2SA 101 Search Results

    TRANSISTOR 2SA 101 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA 101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
    Text: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81


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    PDF 2SA673 2SA778 BB101C BB301M BB301C Transistor 2SA 2SB 2SC 2SD 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228

    2SA733

    Abstract: transistor 2sa733 43BJ
    Text: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR 2SA733 The 2SA 733 is designed for use in driver stage of A F amplifier. PACKAG E D IM E N S IO N S in millimeters inches FE A T U R E S • High hpE and Excellent Linearity hFE (V ce = _ 6.0 V , Ic = : 200 TYP.


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    PDF 2SA733 2SA733 transistor 2sa733 43BJ

    2-7D101A

    Abstract: 2SA1426 2SC3666
    Text: TO SH IBA 2SA1426 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA 1426 U n it in mm A U D IO POWER AMPLIFIER APPLICATIONS. • H igh hjPE : hjrjj = 1 0 0 ~ 3 2 0 • IW O utput A pplications. • 7 .1 MAX 2.7 MAX C om plem entary to 2SC 3666.


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    PDF 2SA1426 2SC3666. 2-7D101A 2-7D101A 2SA1426 2SC3666

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


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    PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sa 102 transistor

    Abstract: A1862 transistor 2SA 101 LA marking code PNP transistor 2sa 102 2SA series a8cc marking code V6 69 2SA1862F5 transistor PNP
    Text: 2SA1862F5 Transistor, PNP Features Dimensions Units : mm • • • available in CPT F5 (SC-63) package package marking: A1862*Q, where ★ is hFE code and □ is lot number 2SA1862F5 (CPT F5) high breakdown voltage, typically 60 B V Ce o = -4 0 0 V •


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    PDF 2SA1862F5 SC-63) A1862 A/-100 2sa 102 transistor transistor 2SA 101 LA marking code PNP transistor 2sa 102 2SA series a8cc marking code V6 69 2SA1862F5 transistor PNP

    A1585-S

    Abstract: No abstract text available
    Text: 2SA1585S Transistor, PNP Features Dimensions Units : mm • a v a ila b le in S P T (S C -7 2 ) p a c k a g e • lo w c o lle c to r s a tu ra tio n v o lta g e , ty p ic a lly V CE(sat) = - 0 .2 V a t 2SA1585S (SPT) 4 ±0.2 2 ± 0 2 1 Ic / I b = - 2 A /-0 .1 A


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    PDF 2SA1585S A1585-S

    2sa 102 transistor

    Abstract: power ge transistor pnp transistors 2SA
    Text: 2SA1862F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A 1 8 6 2 *0 , where ★ is hFE code and □ is lot number • high breakdown voltage, typically BVceo = —400 V • low collector saturation voltage


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    PDF 2SA1862F5 SC-63) A/-100 2sa 102 transistor power ge transistor pnp transistors 2SA

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    uPC1298V-A

    Abstract: upc1298 mpc 1237 PC1298V PC 1298V 1298V UPC1298V mpc 1298v c1298v PC1237
    Text: BIPOLAR ANALOG INTEGRATED C IR CU IT ¿¿PCI 2 9 8 V 50 to 80 W POWER A M PLIFIER DRIVER D E S C R IP T IO N p P C 1 2 9 8 V is a integrated m o no lith ic c irc u it designed fo r 50 W to 8 0 W class H iF i audio pow er a m p lifie r and consists o f a in p u t d iffe re n tial am p lifie r, a predriver c ir c u it, a d river c irc u it and a over cu rren t protection c irc u it.


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    transistor k117

    Abstract: transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor
    Text: 10-1 Small Signal Transistors Mini-Package Type •c (m A ) f j T Y P . (M IN ) V C E (sat) M A X . hFE PC (mW) CCE IV ) >C im A ) ‘c IV ) im A ) !8 Im A ) (M Hz) V CE (V ) !C Im A ) 2SA 1048 2 SC 2 4 5 8 50 150 200 70 ~ 4 0 0 /7 00 6 2 0 .3 /0 .2 5 100


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    PDF 2SC2458 2SC2459 2SC2710 2SC3267 2SC3378 2SC3488 75393P 75393S 75393F transistor k117 transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor

    vno300m

    Abstract: 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028
    Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 100kQ 500MIh, 200MHz) 2SA103I5 vno300m 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


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    PDF 4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362

    sanken power transistor 2SA1216

    Abstract: 2SC2922 SANKEN 2SC3855 SANKEN sanken power transistor 2sa1295 SANKEN 2sc3909 2SC3854 sanken 2SC2922 sanken transistor 2Sa1491 SANKEN 2SA1186 SANKEN 2SC4138
    Text: CONTENTS • Transistor Selection SANKEN POWER TRANSISTORS 2SC3854 •83 2SC4512 125 Guide .2 2SA1860 .43 2SA1907 . .4 4 2SC3855 84 2SC4517 126 ■ Reliability. 8 2SA1908 . 45


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    PDF 2SA1186. 2SA1215. 2SA1216. 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386A 2SA1488 2SA1860 sanken power transistor 2SA1216 2SC2922 SANKEN 2SC3855 SANKEN sanken power transistor 2sa1295 SANKEN 2sc3909 2SC3854 sanken 2SC2922 sanken transistor 2Sa1491 SANKEN 2SA1186 SANKEN 2SC4138

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


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    PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor

    triac tic 236

    Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
    Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD


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    PDF 1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC

    2SC1815

    Abstract: 2SA10150 C1815
    Text: TOSHIBA 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C18 1 5 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • • Unit in mm High Voltage and High Current : V ç e o = 50V (Min.), I q = 150mA (Max.)


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    PDF 2SC1815 150mA 2SC1815 2SA10150 C1815

    Untitled

    Abstract: No abstract text available
    Text: WJ-A82 / SMA82 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: > 28.5 dB TYP. HIGH LEVEL OUTPUT: +20 dBm (TYP.) HIGH GAIN: 22.5 dB (TYP.) Outline Drawings Specifications’1 A82 Typical Characteristics


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    PDF WJ-A82 SMA82 50-ohm

    2SC1815C

    Abstract: 2SC1815C0
    Text: TOSHIBA TRANSISTOR. SEMICONDUCTOR TO SHIBA TECHNICAL 2 S A 1 01 5 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1015©) Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS LOW NOISE AMPLIFIER APPLICATIONS • • • • High Voltage and High Current


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    PDF 2SA1015 2SA1015© --150mA 2SC1815C0 -150O 2SC1815C

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    HA 12058

    Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
    Text: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION


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    PDF HD25/HD HMCS40 HL8314E" HL8312 HL8311 HLP1000 HL7802 HL7801 HL1221 HLP5000 HA 12058 HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


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    PDF N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K