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    TRANSISTOR 2N5330 Search Results

    TRANSISTOR 2N5330 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N5330 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: tStml-dontLuckot ZPioJuati, Una. TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 3784980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS JEDECTO-61 FEATURES ALL TERMINALS ISOLATED FROM CASE RADIATION TOLERANT


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    2N5330 JEDECTO-61 SPT5330 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


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    0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447 PDF

    2N5330

    Abstract: 2N5671 2N5672 2N6322 2N6324 SFT5671 SFT5672 SPT5330 2n56 NPN 25 Amps POWER TRANSISTOR to63
    Text: SOLI» STATE DEVICES INC 12E D fl3t.b011 □□QEDci3 4 T ^4 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS CASE STYLE T JED EC TO—61 ALL TERMINALS ISOLATED FROM CASE ' 3 | 3 - 13 ^ ru n n ill » » D 'Il 14830 Valley View Avenue La Mirada, California 90638


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    83bb011 T-33-13 2N5330 SPT5330 2N5330 2N5671 2N5672 2N6322 2N6324 SFT5671 SFT5672 SPT5330 2n56 NPN 25 Amps POWER TRANSISTOR to63 PDF

    2N5330

    Abstract: SPT5330
    Text: SOLI» STATE DEVICES INC 12E D fl 3 L>b011 □ □ 0 E D ci3 4 | T'33-I 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS CASE STYLE T JEDEC TO—61 ALL TERMINALS ISOLATED FROM CASE g g P II 14830 Valley View Avenue La Mirada, California 90638 (¿lo 9¿1-ybbU


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    2N5330 SPT5330 PDF

    transistor 2n5330

    Abstract: transistor c63 NPN Transistor VCEO 80V 100V
    Text: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)


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    203mm) 40MHz 40MHz 300pF transistor 2n5330 transistor c63 NPN Transistor VCEO 80V 100V PDF

    2N5330

    Abstract: SPT5330
    Text: XOjD\^>ò 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS CASE STYLE T JEDEC TO—61 ALL TERMINALS ISOLATED FROM CASE 14830 V a lley V iew A venue L a M irada, C a lifo rn ia 90638 P. O. Box 577 La M irada, C a lifo rn ia 90637 213 921-9660 T W X 910-583-4807


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    2N5330 SPT5330 SPT5330 PDF

    2N5330

    Abstract: 2N6338 2N6341 SDT44331 SDT44335 1030A
    Text: lo n tra ti ÄTTÄH < MEDIUM TO HIGH VOLTAGE, FAST SWITCHING Devices. Inc. N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CHIP NUM BER dT\ CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)


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    203mm) 2N5330 2N6338 2N6341 SDT44331 SDT44335 1030A PDF

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DEVICES INC 12E D §ñ3btDll □□□2134 3 | -r- 3 3-ai SPT5330 30 AMP HIGH SPEED PNP TRANSISTOR 150 VOLTS CASE STYLE T JEDEC TO—61 ALL TERMINALS ISOLATED FROM CASE 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TW X 910-583-4807


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    SPT5330 2N5330 PDF

    2N5330

    Abstract: ie 10a 2N6275 2N6393 OTC2470 OTC2670
    Text: ÖPTEK TE CH N O L O G Y INC MAE D OTK bVTflSflD 00□ l i 3 flM 7üb g ^ H UKIbK Product Bulletin OTC2470 August 1990 T'SS-I'H NPN Power Switching Transistor ' Type OTC247Q 120V, 30A Applications • High inductance loads as used for solenoids • Power inverters and switching regulators through 50 KHz.


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    OTC2470 OTC2670 f-10MHz 2N5330 2N6275, 2N6393. TLX323-2200 ie 10a 2N6275 2N6393 PDF

    2N5330

    Abstract: ve60 SPT5330 transistor 2n5330
    Text: A 0 0 5 3- SPT5330 30 AMP HIGH SPEED PNP TRANSISTOR 150 VOLTS CASE STYLE T JEDEC TO—61 ALL TERMINALS ISOLATED FROM CASE o ru n rn ll 9 9 P II 14830 Valley View Avenue La Mirada. C alifornia 90638 ¿1 0 ) y ¿ i -ybbu TW X 910-583-4807 FAX 213-921-2396


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    SPT5330 2N5330 2N5330 ve60 transistor 2n5330 PDF

    transistor 2n5330

    Abstract: 2N5330 2N6393 2N6275 OTC2470 OTC2670
    Text: OPTEK T E C H N O L O G Y INC 4 flE D 00 D1 3Ö H 7ûb OTK UKIbK Product Bulletin OTC2470 August 1990 Tss-i6! NPN Power Switching Transistor Type OTC247Q 120V, 30A Applications • High inductance loads as used for solenoids • Power inverters and switching regulators through 50 KHz.


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    OTC2470 00D13Ã OTC2670 f-10MHz 2N5330 2N6275, 2N6393. TLX323-2200 transistor 2n5330 2N6393 2N6275 PDF

    Solitron Transistor

    Abstract: No abstract text available
    Text: .8 3 6 8 6 0 2 SOL IT R O N D E V I C E S INC 95D SOLITRON DEVICES INC ^5 0 2853 D ~ r ~ •?-/ 5^ DE |fl3bflbD5 00D2flS3 0 » » © i r ©ättäiksx n \< Dev/'ces, Inc. MEDIUM TO HIGH VOLTAGE, FAST SW ITCHING N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR


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    00D2flS3 300pF 300pF SDT44331, SDT44335, 2N6338, 2N6341, Solitron Transistor PDF

    SILICON TRANSISTOR CORP

    Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
    Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V


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    8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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