Untitled
Abstract: No abstract text available
Text: tStml-dontLuckot ZPioJuati, Una. TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 3784980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS JEDECTO-61 FEATURES ALL TERMINALS ISOLATED FROM CASE RADIATION TOLERANT
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2N5330
JEDECTO-61
SPT5330
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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2n5863
Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V
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0QD007fl
T0-102
2n5863
MJ2965
TO61 package
12J5
2N8307
2n3713
2N4901
2n3447
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2N5330
Abstract: 2N5671 2N5672 2N6322 2N6324 SFT5671 SFT5672 SPT5330 2n56 NPN 25 Amps POWER TRANSISTOR to63
Text: SOLI» STATE DEVICES INC 12E D fl3t.b011 □□QEDci3 4 T ^4 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS CASE STYLE T JED EC TO—61 ALL TERMINALS ISOLATED FROM CASE ' 3 | 3 - 13 ^ ru n n ill » » D 'Il 14830 Valley View Avenue La Mirada, California 90638
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83bb011
T-33-13
2N5330
SPT5330
2N5330
2N5671
2N5672
2N6322
2N6324
SFT5671
SFT5672
SPT5330
2n56
NPN 25 Amps POWER TRANSISTOR to63
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2N5330
Abstract: SPT5330
Text: SOLI» STATE DEVICES INC 12E D fl 3 L>b011 □ □ 0 E D ci3 4 | T'33-I 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS CASE STYLE T JEDEC TO—61 ALL TERMINALS ISOLATED FROM CASE g g P II 14830 Valley View Avenue La Mirada, California 90638 (¿lo 9¿1-ybbU
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2N5330
SPT5330
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transistor 2n5330
Abstract: transistor c63 NPN Transistor VCEO 80V 100V
Text: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)
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203mm)
40MHz
40MHz
300pF
transistor 2n5330
transistor c63
NPN Transistor VCEO 80V 100V
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2N5330
Abstract: SPT5330
Text: XOjD\^>ò 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS CASE STYLE T JEDEC TO—61 ALL TERMINALS ISOLATED FROM CASE 14830 V a lley V iew A venue L a M irada, C a lifo rn ia 90638 P. O. Box 577 La M irada, C a lifo rn ia 90637 213 921-9660 T W X 910-583-4807
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2N5330
SPT5330
SPT5330
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2N5330
Abstract: 2N6338 2N6341 SDT44331 SDT44335 1030A
Text: lo n tra ti ÄTTÄH < MEDIUM TO HIGH VOLTAGE, FAST SWITCHING Devices. Inc. N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CHIP NUM BER dT\ CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)
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203mm)
2N5330
2N6338
2N6341
SDT44331
SDT44335
1030A
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Untitled
Abstract: No abstract text available
Text: SOLID STATE DEVICES INC 12E D §ñ3btDll □□□2134 3 | -r- 3 3-ai SPT5330 30 AMP HIGH SPEED PNP TRANSISTOR 150 VOLTS CASE STYLE T JEDEC TO—61 ALL TERMINALS ISOLATED FROM CASE 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TW X 910-583-4807
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SPT5330
2N5330
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2N5330
Abstract: ie 10a 2N6275 2N6393 OTC2470 OTC2670
Text: ÖPTEK TE CH N O L O G Y INC MAE D OTK bVTflSflD 00□ l i 3 flM 7üb g ^ H UKIbK Product Bulletin OTC2470 August 1990 T'SS-I'H NPN Power Switching Transistor ' Type OTC247Q 120V, 30A Applications • High inductance loads as used for solenoids • Power inverters and switching regulators through 50 KHz.
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OTC2470
OTC2670
f-10MHz
2N5330
2N6275,
2N6393.
TLX323-2200
ie 10a
2N6275
2N6393
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2N5330
Abstract: ve60 SPT5330 transistor 2n5330
Text: A 0 0 5 3- SPT5330 30 AMP HIGH SPEED PNP TRANSISTOR 150 VOLTS CASE STYLE T JEDEC TO—61 ALL TERMINALS ISOLATED FROM CASE o ru n rn ll 9 9 P II 14830 Valley View Avenue La Mirada. C alifornia 90638 ¿1 0 ) y ¿ i -ybbu TW X 910-583-4807 FAX 213-921-2396
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SPT5330
2N5330
2N5330
ve60
transistor 2n5330
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transistor 2n5330
Abstract: 2N5330 2N6393 2N6275 OTC2470 OTC2670
Text: OPTEK T E C H N O L O G Y INC 4 flE D 00 D1 3Ö H 7ûb OTK UKIbK Product Bulletin OTC2470 August 1990 Tss-i6! NPN Power Switching Transistor Type OTC247Q 120V, 30A Applications • High inductance loads as used for solenoids • Power inverters and switching regulators through 50 KHz.
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OTC2470
00D13Ã
OTC2670
f-10MHz
2N5330
2N6275,
2N6393.
TLX323-2200
transistor 2n5330
2N6393
2N6275
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Solitron Transistor
Abstract: No abstract text available
Text: .8 3 6 8 6 0 2 SOL IT R O N D E V I C E S INC 95D SOLITRON DEVICES INC ^5 0 2853 D ~ r ~ •?-/ 5^ DE |fl3bflbD5 00D2flS3 0 » » © i r ©ättäiksx n \< Dev/'ces, Inc. MEDIUM TO HIGH VOLTAGE, FAST SW ITCHING N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR
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00D2flS3
300pF
300pF
SDT44331,
SDT44335,
2N6338,
2N6341,
Solitron Transistor
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SILICON TRANSISTOR CORP
Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V
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8E54022
FE20-120
30MHz
fTTo40M
50MHz
2N4863
2N5662
N5663
2N5333
SILICON TRANSISTOR CORP
STP515
2N4114
2N4211
2n5609 transistor
2N5627
2N5678
2N5251
2n5609
stp6060
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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