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    TRANSISTOR 2D Search Results

    TRANSISTOR 2D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    fp104

    Abstract: No abstract text available
    Text: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,


    Original     		PDF EN4655 FP104 FP104 2SA1729 SB05-05CP FP104]

    marking EB 202 diode

    Abstract: 2SA1729 FP104 SB05-05CP marking EB 202 transistor EN4655
    Text: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,


    Original     		PDF EN4655 FP104 FP104 2SA1729 SB05-05CP FP104] marking EB 202 diode marking EB 202 transistor EN4655

    SE012

    Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611

    Varistor RU

    Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 Varistor RU SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586

    2SC5586

    Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 2SC5586 transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA92 SOT-23 TRANSISTOR PNP FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit


    Original     		PDF OT-23 MMBTA92 OT-23 -200V, -10mA -30mA -20mA, 30MHz

    marking 2d

    Abstract: MMBTA92 SOT-23 2D sot 23 transistor sot23 marking 2d 2D SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA92 SOT-23 TRANSISTOR PNP FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Value Units


    Original     		PDF OT-23 MMBTA92 OT-23 -100A, -200V, -10mA -30mA -20mA, marking 2d MMBTA92 SOT-23 2D sot 23 transistor sot23 marking 2d 2D SOT23

    fgt313

    Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
    Text: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156


    Original     		PDF 2SA1186 2SC4024 2SA1215 2SC4131 2SA1216 2SC4138 100VAC 2SA1294 2SC4140 fgt313 transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a

    sot23 marking 2d

    Abstract: 2D SOT23 2D TRANSISTOR marking 2D
    Text: MMBTA92 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High voltage transistor MARKING:2D Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF MMBTA92 OT-23 OT-23 -100A, -200V, -10mA -30mA -20mA, sot23 marking 2d 2D SOT23 2D TRANSISTOR marking 2D

    C11531E

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SD2383 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING PACKAGE DRAWING UNIT: mm The 2SD2383 is an element realizing high voltage in small dimension. This transistor is ideal for downsizing sets requiring high voltage.


    Original     		PDF 2SD2383 2SD2383 C11531E) C11531E

    power Junction FET advantages and disadvantages

    Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
    Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor


    Original     		PDF ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet

    LDO sot23

    Abstract: APP1861 CMPT2222A MAX1735 MAX1735EUK25 RMC18-18RJB transistor sot23-3 RMC181
    Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: pass transistor, linear regulator, LDO, increase LDO current, more load current Jan 24, 2003 APPLICATION NOTE 1861 Pass Transistor Boosts Current from Negative Linear Regulator Abstract: The addition of a pass transistor to the circuit of Figure 1 allows the linear regulator LDO to deliver


    Original     		PDF com/an1861 MAX1735: AN1861, APP1861, Appnote1861, LDO sot23 APP1861 CMPT2222A MAX1735 MAX1735EUK25 RMC18-18RJB transistor sot23-3 RMC181

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    1000V 20A transistor

    Abstract: 2DI30D-100 transistor VCEO 1000V
    Text: 2DI30D-100 30A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 大電流 High Current が高い High DC Current Gain hFE が高い


    Original     		PDF 2DI30D-100 25to30IC 1000V 20A transistor 2DI30D-100 transistor VCEO 1000V

    E82988

    Abstract: vebo 2DI50M-050 dc servo drive schematic schematic welding machine M208 fuji transistor module fuji servo drive transistor servo drive
    Text: 2DI50M-050 50A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： hFE が高い が高い High DC Current Gain 絶縁形 Insulated Type


    Original     		PDF 2DI50M-050 E82988 vebo 2DI50M-050 dc servo drive schematic schematic welding machine M208 fuji transistor module fuji servo drive transistor servo drive

    2DI30M-050

    Abstract: M208 diode 30A 600v T 250 transistor
    Text: 2DI30M-050 30A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： hFE が高い が高い High DC Current Gain 絶縁形 Insulated Type


    Original     		PDF 2DI30M-050 2DI30M-050 M208 diode 30A 600v T 250 transistor

    BP317

    Abstract: PMBTA42 PMBTA92
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA92 PNP high-voltage transistor Product specification Supersedes data of 1998 Jul 21 1999 Apr 13 Philips Semiconductors Product specification PNP high-voltage transistor PMBTA92 FEATURES PINNING


    Original     		PDF M3D088 PMBTA92 PMBTA42. MAM256 SCA63 115002/00/04/pp8 BP317 PMBTA42 PMBTA92

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    BUK454-500B

    Abstract: BUK454-500A K4545 buk454 T0220AB drain
    Text: N AMER SSE PHILIPS/DISCRETE 0Q 2D M 7G D S B U K 454-500A B U K 454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK454-500A BUK454-500B BUK454 -500A -500B T0220AB; BUK454-500B K4545 T0220AB drain

    3b transistor

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7425 14-Lead DIP, See Diag. 247 Dual 4-Input Positive N O R Gate w/Strobe NTE7426, 14-Lead DIP, See Diag. 247 NTE74LS26 Quad 2-input High Voltage Interface NAND Gate Q v cc 1A QV cc ia 0 2D 1B B B 4B


    OCR Scan     		PDF NTE7425 14-Lead NTE7426, NTE74LS26 MTE7427, NTE74LS27 NTE7428, NTE74LS28 3b transistor

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E D bbS3^31 QQ2T474 72T APX DLVVO / V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF QQ2T474

    bdl 40

    Abstract: l43 transistor transistor marking 2d ghz 9335 895 BFG480W
    Text: DISCRETE SEMICONDUCTORS sheet BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jul 09 PHILIPS Philips Semiconductors Preliminary specification NPN wideband transistor


    OCR Scan     		PDF BFG480W BFG480W SCA60 04/00/02/pp1 bdl 40 l43 transistor transistor marking 2d ghz 9335 895

    2DI75M-120

    Abstract: 1di200
    Text: ^ g jjjf /\°7 — x / W 7s / Power Devices • / v'9 —h 7 > y X ^ i y . i “ ^ Power Transistor Modules 1 2 0 0 V ? 7 * S h F E / '* 7 - h 7 > '> '^ 5 f ;E ' > ' a - ^ 1200 volts class high hFE power transistor modules m £ V cbo Device type 2DI50M-120


    OCR Scan     		PDF 2DI50M-120 2DI75M-120 2DI100M-120 2DI150M-120 1DI200M-120 1DI300M-120 T25C3 M2047 6DI15M-120 6DI30M-120 1di200